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US5504041A
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Conductive exotic-nitride barrier layer for high-dielectric-constant materials
Assignee: Texas Instruments Inc
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Filing: 1994-08-01
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Granted: 1996-04-02
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Expires: 2014-08-01
Abstract
Abstract A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), a conductive exotic-nitride barrier layer (e.g. Ti--A--N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the exotic-nitride layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The exotic-nitride barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
Inventors
- 👤 Scott R. Summerfelt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 09:01
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
129 words
A method of forming a microelectronic structure, said method comprising: (a) providing a semiconductor substrate having an oxidizable layer; (b) forming a conductive nitride layer on said oxidizable layer, said conductive nitride selected from the group consisting of: titanium aluminum nitride, Zr nitride, Hf nitride, Y nitride, Sc nitride, La nitride, other rare earth nitrides, N deficient Al nitride, doped Al nitride, Mg nitride, Ca nitride, Sr nitride, Ba nitride, and combinations thereof; (c) forming an oxygen stable layer on said conductive nitride layer; (d) forming an oxygen stable sidewall adjacent to said conductive nitride layer and said oxygen stable layer, and (e) forming a layer of a high-dielectric-constant material on said oxygen stable layer, wherein the conductive nitride layer substantially inhibits diffusion of oxygen to the oxidizable layer.
Claim 2
Independent Claim
129 words
A method of forming a microelectronic structure, said method comprising: (a) providing a semiconductor substrate having an oxidizable layer; (b) forming a conductive nitride layer on said oxidizable layer, said conductive nitride selected from the group consisting of: titanium aluminum nitride, Zr nitride, Hf nitride, Y nitride, Sc nitride, La nitride, other rare earth nitrides, N deficient Al nitride, doped Al nitride, Mg nitride, Ca nitride, Sr nitride, Ba nitride, and combinations thereof; (c) forming an oxygen stable layer on said conductive nitride layer; (d) forming an oxygen stable sidewall adjacent to said conductive nitride layer and said oxygen stable layer, and (e) forming a layer of a high-dielectric-constant material on said oxygen stable layer, wherein the conductive nitride layer substantially inhibits diffusion of oxygen to the oxidizable layer.
Claim 3
Dependent Claim
31 words
The method according to claim 1, said method further comprising exposing said structure to oxygen between said steps (c) and (d) to pre-oxidize a sidewall portion of said conductive nitride layer.
Claim 4
Dependent Claim
32 words
The method according to claim 1, said method further comprising exposing said structure to oxygen between said steps (c) and (d) to pre-oxidize an upper surface portion of said conductive nitride layer.
Claim 5
Dependent Claim
18 words
The method according to claim 1, wherein said conductive nitride layer is partially oxidized during said step (d).
Claim 6
Dependent Claim
13 words
The method according to claim 1, wherein said conductive nitride layer is Ti--Al--N.
Claim 7
Dependent Claim
46 words
The method according to claim 1, wherein said oxidizable layer is selected from the group consisting of: tantalum, tungsten, titanium, molybdenum, titanium nitride, zirconium nitride, titanium silicide, tantalum silicide, tungsten silicide, molybdenum silicide, tantalum carbide, titanium boride, boron carbide, silicon, germanium, carbon, GaAs, and combinations thereof.
Claim 8
Dependent Claim
50 words
The method according to claim 1, wherein said high-dielectric-constant material is selected from the group consisting of: barium strontium titanate, lead zirconate titanate, lead lanthanum titanate, lead lanthanum zirconate titanate, bismuth titanate, potassium tantalate, lead scandium tantalate, lead niobate, lead zinc niobate, potassium niobate, lead magnesium niobate, and combinations thereof.
Claim 9
Dependent Claim
12 words
The method according to claim 1, wherein said oxygen stable layer comprises
Claim 10
Dependent Claim
39 words
The method according to claim 1, wherein said oxygen stable layer is selected from the group consisting of: platinum, palladium, rhenium, rhodium, ruthenium oxide, tin oxide, indium oxide, rhenium oxide, osmium oxide, rhodium oxide, iridium oxide, and combinations thereof.
Claim 11
Dependent Claim
19 words
The method according to claim 1, said method further comprising forming an upper electrode on said high-dielectric-constant material layer.
Claim 12
Dependent Claim
41 words
The method according to claim 10, wherein said upper electrode is selected from the group consisting of: tungsten, tungsten nitride, titanium, titanium nitride, ruthenium dioxide, YBa 2 Cu 3 O 7 , platinum, palladium, rhodium, gold, iridium, silver, and combinations thereof.
Claim 13
Independent Claim
62 words
A method of forming a microelectronic structure, said method comprising: (a) forming a TiN layer on a semiconductor substrate; (b) forming a Ti--Al--N layer on said TiN layer; (c) forming a Pt layer on said Ti--Al--N layer; and (d) forming a barium strontium titanate layer on said Pt layer, wherein said Ti--Al--N layer substantially inhibits diffusion of oxygen to said TiN layer.
Claim 14
Independent Claim
62 words
A method of forming a microelectronic structure, said method comprising: (a) forming a TiN layer on a semiconductor substrate; (b) forming a Ti--Al--N layer on said TiN layer; (c) forming a Pt layer on said Ti--Al--N layer; and (d) forming a barium strontium titanate layer on said Pt layer, wherein said Ti--Al--N layer substantially inhibits diffusion of oxygen to said TiN layer.
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