Patent US5514885A successfully refreshed from Google Patents.
US5514885A
Expired / Lapsed
US
⏱️ 0.0 years remaining
SOI methods and apparatus
Assignee: Individual
•
Filing: 1995-01-13
•
Granted: 1996-05-07
•
Expires: 2015-01-13
Abstract
Abstract A charge coupled device is fabricated from a monocrystalline semiconductor-on-insulator (SOI) composite structure.
Inventors
- 👤 James J. Myrick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 14:26
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/13; G02B6/132; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2924; H10P14/2925; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3206; H10P14/3238; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/38; H10P14/3802; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10W; H10W10/00; H10W10/10; H10W10/181; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
93 words
A charge coupled device having a low operating capacitance comprising a monocrystalline semiconductor substrate, a dielectric layer atop said substrate, a thin monocrystalline semiconductor layer spitaxially monolithic with said monocrystalline substrate at a plurality of window zones through said dielectric layer, atop said dielectric layer, said thin monocrystalline semiconductor layer having a thickness in the range of from about 0.25 to about 5 microns, and having a defined thin semiconductor charge conduction channel, input and output structures in said channel, and charge transfer electrodes atop said channel between said input and output structures.
Claim 2
Dependent Claim
93 words
A charge coupled device having a low operating capacitance comprising a monocrystalline semiconductor substrate, a dielectric layer atop said substrate, a thin monocrystalline semiconductor layer spitaxially monolithic with said monocrystalline substrate at a plurality of window zones through said dielectric layer, atop said dielectric layer, said thin monocrystalline semiconductor layer having a thickness in the range of from about 0.25 to about 5 microns, and having a defined thin semiconductor charge conduction channel, input and output structures in said channel, and charge transfer electrodes atop said channel between said input and output structures.
Claim 3
Dependent Claim
32 words
A charge coupled device in accordance with claim 1 wherein said device is a buried channel device, and wherein said thin monocrystalline semiconductor layer comprises a p-type layer and an n-type layer.
References Cited (Backward Citations)
DE221207C
Cited
US3383298A
Cited
US3906543A
Cited
US4275407A
Cited
US4137625A
Cited
US4206470A
Cited
US4142925A
Cited
US4328646A
Cited
US4223234A
Cited
US4350537A
Cited
US4482393A
Cited
US4269631A
Cited
US4356384A
Cited
US4422091A
Cited
US4521798A
Cited
JPS5833832A
Cited
US4461670A
Cited
US4876582A
Cited
US4564403A
Cited
US4662949A
Cited
US4673475A
Cited
US4778775A
Cited
US4704186A
Cited
US4751193A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-05-07 | 1999-11-06 | 2000-05-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-05-07 | 2003-11-06 | 2004-05-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-05-07 | 2007-11-06 | 2008-05-07 | $7700.00 | Window Closed / Lapsed |