US5541441A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal to metal antifuse
Assignee: Microsemi SoC Corp
•
Filing: 1994-10-06
•
Granted: 1996-07-30
•
Expires: 2014-10-06
Abstract
Abstract The antifuse structure of the present invention includes a bottom planarized electrode, an ILD disposed over the bottom electrode, an antifuse cell opening in and through the ILD exposing the bottom electrode, a first barrier metal layer disposed in the antifuse cell opening to protect the antifuse material layer from diffusion from the bottom electrode and to form an effective bottom electrode of reduced area, hence reducing the capacitance of the device, an antifuse material layer disposed in the antifuse cell opening and over the first barrier metal layer, a second barrier metal layer disposed over the antifuse material layer, and a top electrode disposed over the second barrier metal layer.
Inventors
- 👤 Yen Yeuochung
- 👤 Shih-Oh Chen
- 👤 Leuh Fang
- 👤 Elaine K. Poon
- 👤 James B. Kruger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:40
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
124 words
An antifuse structure disposed over an insulating portion of a semiconductor substrate comprising: a bottom electrode including an upper surface; an interlayer dielectric layer disposed over said bottom electrode; an antifuse cell opening in and through said interlayer dielectric layer and exposing said upper surface of said bottom electrode; a first barrier metal layer disposed entirely within said antifuse cell opening and over and in physical and electrical contact with said bottom electrode; an antifuse material layer disposed over said interlayer dielectric layer, in said antifuse cell opening and over said first barrier metal layer; a second barrier metal layer disposed over said antifuse material layer; and a top electrode disposed over and in electrical and physical contact with said second barrier metal layer.
Claim 2
Dependent Claim
124 words
An antifuse structure disposed over an insulating portion of a semiconductor substrate comprising: a bottom electrode including an upper surface; an interlayer dielectric layer disposed over said bottom electrode; an antifuse cell opening in and through said interlayer dielectric layer and exposing said upper surface of said bottom electrode; a first barrier metal layer disposed entirely within said antifuse cell opening and over and in physical and electrical contact with said bottom electrode; an antifuse material layer disposed over said interlayer dielectric layer, in said antifuse cell opening and over said first barrier metal layer; a second barrier metal layer disposed over said antifuse material layer; and a top electrode disposed over and in electrical and physical contact with said second barrier metal layer.
Claim 3
Dependent Claim
49 words
An antifuse structure according to claim 1 wherein said first barrier metal layer is in the shape of a cup, said cup including a bottom surface and a sleeve, said bottom surface in contact with at least a portion of said upper surface and said sleeve extending upwardly therefrom.
Claim 4
Dependent Claim
37 words
An antifuse according to claim 1 wherein said antifuse material layer includes a first nitride layer, an amorphous silicon layer disposed over said first nitride layer, and a second nitride layer disposed over said amorphous silicon layer.
Claim 5
Dependent Claim
37 words
An antifuse according to claim 2 wherein said antifuse material layer includes a first nitride layer, an amorphous silicon layer disposed over said first nitride layer, and a second nitride layer disposed over said amorphous silicon layer.
Claim 6
Dependent Claim
104 words
An antifuse structure comprising: a bottom electrode including an upper surface; an interlayer dielectric layer disposed over said bottom electrode; an antifuse cell opening in and through said interlayer dielectric layer and exposing said upper surface of said bottom electrode; a first barrier metal layer disposed entirely within said antifuse cell opening and over and in physical and electrical contact with said bottom electrode; an antifuse material layer disposed over said first barrier metal layer; a second barrier metal layer disposed over said antifuse material layer; and a top electrode disposed over and in electrical and physical contact with said second barrier metal layer.
Claim 7
Dependent Claim
104 words
An antifuse structure comprising: a bottom electrode including an upper surface; an interlayer dielectric layer disposed over said bottom electrode; an antifuse cell opening in and through said interlayer dielectric layer and exposing said upper surface of said bottom electrode; a first barrier metal layer disposed entirely within said antifuse cell opening and over and in physical and electrical contact with said bottom electrode; an antifuse material layer disposed over said first barrier metal layer; a second barrier metal layer disposed over said antifuse material layer; and a top electrode disposed over and in electrical and physical contact with said second barrier metal layer.
Claim 8
Dependent Claim
49 words
An antifuse structure according to claim 5 wherein said first barrier metal layer is in the shape of a cup, said cup including a bottom surface and a sleeve, said bottom surface in contact with at least a portion of said upper surface and said sleeve extending upwardly therefrom.
Claim 9
Dependent Claim
37 words
An antifuse according to claim 5 wherein said antifuse material layer includes a first nitride layer, an amorphous silicon layer disposed over said first nitride layer, and a second nitride layer disposed over said amorphous silicon layer.
Claim 10
Dependent Claim
37 words
An antifuse according to claim 6 wherein said antifuse material layer includes a first nitride layer, an amorphous silicon layer disposed over said first nitride layer, and a second nitride layer disposed over said amorphous silicon layer.
References Cited (Backward Citations)
US4847732A
Cited
US4796075A
Cited
US4870302A
Cited
US4561409A
Cited
WO1987000969A1
Cited
US4748490A
Cited
WO1987002827A1
Cited
US5134457A
Cited
US4899205A
Cited
US5266829A
Cited
US4943538A
Cited
US4822753A
Cited
US4933576A
Cited
US4914055A
Cited
US5070384A
Cited
US5272101A
Cited
EP0455414A1
Cited
US5194759A
Cited
US5095362A
Cited
WO1992013359A1
Cited
US5166556A
Cited
US5100827A
Cited
US5322812A
Cited
US5196724A
Cited
US5233217A
Cited
WO1992020109A1
Cited
US5290734A
Cited
US5120679A
Cited
WO1993003499A1
Cited
US5272666A
Cited
US5171715A
Cited
US5475253A
Cited
US5308795A
Cited
US5300456A
Cited
US5449947A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-07-30 | 2000-01-29 | 2000-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-07-30 | 2004-01-29 | 2004-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-07-30 | 2008-01-29 | 2008-07-30 | $7700.00 | Window Closed / Lapsed |