US5547539A — Plasma processing apparatus and method

Claim 1

Independent Claim 178 words

A plasma processing apparatus for using heat exchange gas to increase the efficiency of cooling an object, which is to be processed, through a suscepter during plasma generation comprising: a first passage opened in a top of the suscepter at a peripheral area thereof; first gas supply means for supplying heat exchange gas into a small clearance between the suscepter and the object through the first passage; first exhaust means for exhausting the small clearance through the first passage; a second passage opened in the top of the suscepter at a center area thereof; second gas supply means for supplying heat exchange gas into the small clearance through the second passage; second exhaust means for exhausting the small clearance through the second passage; and control means for controlling the first and second gas supply and exhaust means independently of the others an such a way that backpressure caused in the second passage by the second gas supply and exhaust means can become lower than backpressure caused in the first passage by the first gas supply and exhaust means.

Claim 2

Dependent Claim 178 words

A plasma processing apparatus for using heat exchange gas to increase the efficiency of cooling an object, which is to be processed, through a suscepter during plasma generation comprising: a first passage opened in a top of the suscepter at a peripheral area thereof; first gas supply means for supplying heat exchange gas into a small clearance between the suscepter and the object through the first passage; first exhaust means for exhausting the small clearance through the first passage; a second passage opened in the top of the suscepter at a center area thereof; second gas supply means for supplying heat exchange gas into the small clearance through the second passage; second exhaust means for exhausting the small clearance through the second passage; and control means for controlling the first and second gas supply and exhaust means independently of the others an such a way that backpressure caused in the second passage by the second gas supply and exhaust means can become lower than backpressure caused in the first passage by the first gas supply and exhaust means.

Claim 3

Dependent Claim 57 words

The plasma processing apparatus according to claim 1, further comprising memory means for storing data relating to temperatures and backpressures obtained when a dummy wafer is used, wherein said control means controls the second gas supply and exhaust means on the basis of data read from the memory means to change the backpressure in the second passage.

Claim 4

Dependent Claim 45 words

The plasma processing apparatus according to claim 1, further comprising temperature sensors for detecting the temperature of the suscepter, wherein said control means controls the second gas supply and exhaust means on the basis of temperature detected to change the backpressure in the second passage.

Claim 5

Dependent Claim 57 words

The plasma processing apparatus according to claim 2, wherein said control means controls the backpressure of heat exchange gas introduced to the peripheral area of the object to a certain value in a range of 5-30 Torr, while it changes the backpressure of heat exchange gas introduced to the middle area thereof in range of 5-12.5 Torr.

Claim 6

Dependent Claim 61 words

The plasma processing apparatus according to claim 3, wherein said control means controls the backpressure of heat exchange gas introduced to the peripheral area of the object to be a certain value in a range of 5-30 Torr, while it controls the backpressure of heat exchange gas introduced to the center area thereof to change in a range of 5-12.5 Torr.

Claim 7

Dependent Claim 45 words

The plasma processing apparatus according to claim 1, wherein the first and second passages are opened in the top of the suscepter at plural points thereof and first group opens thus opened are arranged concentric with second group opens in the top of the suscepter.

Claim 8

Dependent Claim 37 words

The plasma processing apparatus according to claim 6, further comprising plural grooves coaxially arranged in the top of the suscepter at the peripheral thereof, wherein said first group opens are arranged at the bottom of said grooves.

Claim 9

Dependent Claim 24 words

The plasma processing apparatus according to claim 6, wherein said first group opens are 50 mm or less distant from said second group opens.

Claim 10

Dependent Claim 67 words

The plasma processing apparatus according to claim 1, further comprising a third passage opened in the top of the suscepter at the middle area thereof which is between the peripheral area and the center area thereof, third gas supply means for supply heat exchange gas into the small clearance through the third passage, and third gas exhaust means for exhausting the small clearance through the third passage.

Claim 11

Dependent Claim 25 words

The plasma processing apparatus according to claim 1, wherein heat exchange gases supplied from the first and second gas supply means have a same composition.

Claim 12

Dependent Claim 24 words

The plasma processing apparatus according to claim 1, wherein heat exchange gas supplied from the first and second gas supply means have different compositions.

Claim 13

Dependent Claim 118 words

A plasma processing apparatus for using heat exchange gas to increase the efficiency of cooling an object, which is to be process, through a suscepter during plasma generation comprising: a first passage opened in that face of the suscepter, on which an object to be processed is mounted, at a peripheral area thereof; gas supply means for supplying heat exchange gas into a small clearance between the suscepter and the object through the first passage; second passage opened in the object-mounted face of the suscepter at the center area thereof; exhaust means for exhausting the small clearance through the second passage; and control means for controlling the gas supply means and the exhaust means independently of the other.

Claim 14

Dependent Claim 118 words

A plasma processing apparatus for using heat exchange gas to increase the efficiency of cooling an object, which is to be process, through a suscepter during plasma generation comprising: a first passage opened in that face of the suscepter, on which an object to be processed is mounted, at a peripheral area thereof; gas supply means for supplying heat exchange gas into a small clearance between the suscepter and the object through the first passage; second passage opened in the object-mounted face of the suscepter at the center area thereof; exhaust means for exhausting the small clearance through the second passage; and control means for controlling the gas supply means and the exhaust means independently of the other.

Claim 15

Dependent Claim 27 words

The plasma processing apparatus according to claim 12, wherein said control means includes pressure detector means for detecting the pressure of gas exhausted through the second passage.

Claim 16

Dependent Claim 87 words

A plasma processing method of using heat exchange gas to increase the efficiency of cooling an object, which is to be processed, through a suscepter during plasma generation comprising: introducing first and second heat exchange gases into a small clearance between the suscepter and the object through holes formed in the top of the suscepter at a peripheral and a center area thereof, while exhausting the small clearance; and making the backpressure of said first heat exchange gas higher than that of said second heat exchange gas.

Claim 17

Dependent Claim 87 words

A plasma processing method of using heat exchange gas to increase the efficiency of cooling an object, which is to be processed, through a suscepter during plasma generation comprising: introducing first and second heat exchange gases into a small clearance between the suscepter and the object through holes formed in the top of the suscepter at a peripheral and a center area thereof, while exhausting the small clearance; and making the backpressure of said first heat exchange gas higher than that of said second heat exchange gas.

Claim 18

Dependent Claim 43 words

The plasma processing method according to claim 14, whereby the backpressure of said first heat exchange gas is set certain in a range of 5-30 Torr and the backpressure of said second heat exchange gas is changed in a range of 5-12.5 Torr.

Claim 19

Dependent Claim 25 words

The plasma processing method according to claim 14, whereby the temperature of the suscepter is controlled to be lower than room temperature during plasma generation.

Claim 20

Dependent Claim 39 words

The plasma processing apparatus according to claim 14, whereby the temperature of the suscepter is set lower than -10° C. while the surface of the object is set to have a temperature range of 20°-70° C. during plasma generation.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1999-08-20	2000-02-19	2000-08-20	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2003-08-20	2004-02-19	2004-08-20	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2007-08-20	2008-02-19	2008-08-20	$7700.00	Window Closed / Lapsed

Plasma processing apparatus and method

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