Nonvolatile semiconductor memory device having a memory cell transistor and a select transistor

Claim 2

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein said sub-bit line comprises two sub-bit lines of a first sub-bit line and a second sub-bit line having a predetermined distance therebetween in a direction perpendicular to the extending direction of said main bit line, said first and second sub-bit lines comprising a plurality of segments spaced apart and extending parallel to the extending direction of said main bit line for a predetermined length of said main bit line L said sub-bit line having one select transistor connected thereto.

Claim 3

The nonvolatile semiconductor memory device according to claim 1, wherein a word line of a first conductive layer is formed above a control gate of said memory cell transistor with a first interlayer insulation film therebetween, and said main bit line of a second conductive layer is formed on said word line via a second interlayer insulation film.

Claim 4

The nonvolatile semiconductor memory device according to claim 1, wherein the channel width of said select transistor is greater than the channel width of said memory cell transistor.

Claim 5

The nonvolatile semiconductor memory device according to claim 1, wherein connection between said sub-bit line and a source region of said select transistor is established via a plurality of contact holes.

Claim 6

The nonvolatile semiconductor memory device according to claim 1, wherein said sub-bit line is selected from the group consisting of a polysilicon interconnection, a polycide interconnection, and a refractory metal interconnection.

Claim 7

The nonvolatile semiconductor memory device according to claim 1, wherein said sub-bit line is formed in a direction substantially perpendicularly to the extending direction of said word line.

Claim 8

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein said sub-bit line comprises two sub-bit lines of a first sub-bit line and a second sub-bit line having a predetermined distance therebetween in a direction perpendicular to the extending direction of said main bit line, said first and second sub-bit lines comprising a plurality of segments spaced apart and extending parallel to the extending direction of said main bit line for a predetermined length of said main bit line, said sub-bit line having one select transistor connected thereto, wherein said select transistor comprises a first select transistor connected to one end of said first sub-bit line, and a second select transistor connected to one end of said second sub-bit line at the other end side of said first sub-bit line.

Claim 9

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein said sub-bit line comprises two sub-bit lines of a first sub-bit line and a second sub-bit line having a predetermined distance therebetween in a direction perpendicular to the extending direction of said main bit line, said first and second sub-bit lines comprising a plurality of segments spaced apart and extending parallel to the extending direction of said main bit line for a predetermined length of said main bit line, said sub-bit line having one select transistor connected thereto, wherein said select transistor comprises a first select transistor connected to one end of said first sub-bit line, and a second select transistor connected to one end of said second sub-bit line at the other end side of said first sub-bit line.

Claim 10

The nonvolatile semiconductor memory device according to claim 7, wherein the channel width of said first and second select transistors is greater than that of said memory cell transistor.

Claim 11

The nonvolatile semiconductor memory device according to claim 7, wherein the channel width of said first and second select transistors is at least 3 times the channel width of said memory cell transistor.

Claim 12

The nonvolatile semiconductor memory device according to according to claim 7, wherein the channel width of said first and second select transistors is greater than that of said memory cell transistors, the length of the source region in the channel width direction of said select transistor is substantially equal to the channel width of said select transistor, and connection between said sub-bit line and the source region of said select transistor is established via a plurality of contact holes.

Claim 13

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein connection between said sub-bit line and a source region of said select transistor is established via a plurality of contact holes and the length of the source region in the channel width direction of said select transistor is greater than the channel width of said memory cell transistor.

Claim 14

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein connection between said sub-bit line and a source region of said select transistor is established via a plurality of contact holes and the length of the source region in the channel width direction of said select transistor is greater than the channel width of said memory cell transistor.

Claim 15

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein a word line of a first conductive layer is formed above a control gate of said memory cell transistor with a first interlayer insulation film therebetween, and said main bit line of a second conductive layer is formed on said word line via a second interlayer insulation film.

Claim 16

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein a word line of a first conductive layer is formed above a control gate of said memory cell transistor with a first interlayer insulation film therebetween, and said main bit line of a second conductive layer is formed on said word line via a second interlayer insulation film.

Claim 17

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein said sub-bit line is selected from the group consisting of a polysilicon interconnection, a polycide interconnection, and a refractory metal interconnection.

Claim 18

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein said sub-bit line is selected from the group consisting of a polysilicon interconnection, a polycide interconnection, and a refractory metal interconnection.

Claim 19

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein said sub-bit line comprises two sub-bit lines of a first sub-bit line and a second sub-bit line having predetermined distance therebetween in a direction perpendicular to the extending direction of said main bit line, said first and second sub-bit lines comprising a plurality of segments spaced apart and extending parallel to the extending direction of said main bit line for a predetermined length of said main bit line L said sub-bit line having one select transistor connected thereto, wherein the distance between the center line of two consecutive main bit lines is twice the distance between the center line of two consecutive sub-bit lines.

Claim 20

A nonvolatile semiconductor memory device including a memory cell transistor and a select transistor for storing information by drawing electrons from a floating gate of a memory cell transistor by means of a tunnel phenomenon in a region where a drain region and said floating gate of said memory cell transistor overlap, said nonvolatile semiconductor memory device comprising: a main bit line electrically connected to said select transistor, and a sub-bit line electrically connected to said memory cell transistor, and having a length corresponding to at least 16 and not more than 1024 memory cell transistors; wherein said sub-bit line comprises two sub-bit lines of a first sub-bit line and a second sub-bit line having predetermined distance therebetween in a direction perpendicular to the extending direction of said main bit line, said first and second sub-bit lines comprising a plurality of segments spaced apart and extending parallel to the extending direction of said main bit line for a predetermined length of said main bit line L said sub-bit line having one select transistor connected thereto, wherein the distance between the center line of two consecutive main bit lines is twice the distance between the center line of two consecutive sub-bit lines.