US5561084A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making an interconnection structure of a semiconductor device
Assignee: Renesas Electronics Corp
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Filing: 1995-06-02
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Granted: 1996-10-01
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Expires: 2015-06-02
Abstract
Abstract A first aluminum interconnection layer includes an aluminum alloy layer 12 and an upper metal layer 13 containing refractory metal. A second aluminum layer 15 is in contact with a surface of upper metal layer 13 through a through-hole 19. A thickness t2 of a contact portion 132 of upper metal layer 13 is smaller than a thickness t1 of a non-contact portion 131. In an interconnection structure for a semiconductor integrated circuit device, the increase in electric resistance by the through-hole is suppressed, and also effects achieved by layer 13 containing refractory metal forming the most upper portion of first aluminum interconnection layer 1A are maintained.
Inventors
- 👤 Yoshifumi Takata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:25
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/425
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
102 words
A method of manufacturing an interconnection structure for a semiconductor device, comprising the steps of: forming a first interconnection layer comprising upper and lower conductive layers, one on top of the other; forming an insulating layer on said first interconnection layer; forming a through-hole extending completely through said insulating layer and into but not through said upper conductive layer by selectively removing said insulating layer, and said upper conductive layer; and forming a second interconnection layer on said insulating layer, said second interconnection layer extending through said through-hole so as to be in contact with a surface of said upper conductive layer.
Claim 2
Independent Claim
102 words
A method of manufacturing an interconnection structure for a semiconductor device, comprising the steps of: forming a first interconnection layer comprising upper and lower conductive layers, one on top of the other; forming an insulating layer on said first interconnection layer; forming a through-hole extending completely through said insulating layer and into but not through said upper conductive layer by selectively removing said insulating layer, and said upper conductive layer; and forming a second interconnection layer on said insulating layer, said second interconnection layer extending through said through-hole so as to be in contact with a surface of said upper conductive layer.
Claim 3
Dependent Claim
33 words
The manufacturing method of an interconnection structure for a semiconductor device according to claim 1, wherein said step forming the trough-hole includes the step of removing said upper conductive layer by anisotropic etching.
Claim 4
Dependent Claim
31 words
The manufacturing method of an interconnection structure for a semiconductor device according to claim 2, wherein said step forming the trough-hole includes the step of controlling time of said anisotropic etching.
Claim 5
Dependent Claim
53 words
The manufacturing method of an interconnection structure for a semiconductor device according to claim 2, wherein said step forming the through-hole includes the step of using a gas of at least one selected from a group consisting of SF 6 , SiCl 4 , Cl 2 and CF 4 as an etching gas.
References Cited (Backward Citations)
US3562604A
Cited
US4556897A
Cited
US4900695A
Cited
US4965226A
Cited
US5082801A
Cited
US5422312A
Cited
US5470790A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-01 | 2000-04-01 | 2000-10-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-01 | 2004-04-01 | 2004-10-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-01 | 2008-04-01 | 2008-10-01 | $7700.00 | Window Closed / Lapsed |