US5568426A
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Method and apparatus for performing memory cell verification on a nonvolatile memory circuit
Assignee: Micron Technology Inc
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Filing: 1995-07-26
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Granted: 1996-10-22
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Expires: 2015-07-26
Abstract
Abstract A method for verifying the status of selected nonvolatile memory cells of an integrated memory circuit, such as during a memory erase or programming operation, and an integrated nonvolatile memory circuit including circuitry for performing this verification method. Preferably, the invention employs simple logic circuitry including a flip-flop to assert successful verification data only in response to a continuous validity of a verification signal throughout a sampling period, thereby avoiding false assertion of successful verification data. The sampling period is preferably longer than the expected duration of fluctuations due to noise in the verification signal. During the sampling period of a verification operation, the logic circuitry receives a raw verification signal indicative of the instantaneous relation between a measured threshold voltage of a selected memory cell and a reference voltage. The raw verification signal is valid if the threshold voltage has a desired relation to the reference voltage at an instant of time. The flip-flop remains in a first state while the raw verification signal is valid, but enters a second state in response to the raw verification signal going invalid and remains in the second state for the rest of the sampling period. An output signal from the logic circuitry indicates the state of the flip-flop at the end of the sampling period. A level of the output signal indicating that the flip-flop is in the first state at the end of the sampling period is interpreted as successful verification data.
Inventors
- 👤 Fariborz F. Roohparvar
- 👤 Michael S. Briner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:46
CPC Classifications
G; G11; G11C; G11C29/00; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3436; G11C16/344; G11C16/3445; G11C16/3454; G11C16/3459; G11C29/04; G11C29/08; G11C29/12; G11C29/38; G11C29/52
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
119 words
An integrated nonvolatile memory circuit, including: an array of nonvolatile memory cells; selection means for connecting a selected one of the cells to a first node; first means connected to the first node for generating a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of the selected one of the memory cells and a reference voltage, said raw verification signal being valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; and second means for processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by at least a selected margin during a sampling period.
Claim 2
Dependent Claim
119 words
An integrated nonvolatile memory circuit, including: an array of nonvolatile memory cells; selection means for connecting a selected one of the cells to a first node; first means connected to the first node for generating a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of the selected one of the memory cells and a reference voltage, said raw verification signal being valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; and second means for processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by at least a selected margin during a sampling period.
Claim 3
Dependent Claim
25 words
The memory circuit of claim 1, wherein the verification signal is indicative of whether the raw verification signal remains valid continuously during the sampling period.
Claim 4
Dependent Claim
26 words
The memory circuit of claim 2, wherein the sampling period is longer than an expected duration of fluctuations due to noise in the raw verification signal.
Claim 5
Dependent Claim
33 words
The memory circuit of claim 2, wherein the first means includes: a sense amplifier having an input terminal connected to the first node and an output terminal which asserts the raw verification signal.
Claim 6
Dependent Claim
38 words
The memory circuit of claim 4, also including: logic means for receiving the raw verification signal from the sense amplifier and asserting said raw verification signal to the second means during a verification operation including said sampling period.
Claim 7
Dependent Claim
102 words
The memory circuit of claim 2, wherein the second means includes: a flip-flop circuit which undergoes a transition from a first state to a second state in response to the raw verification signal going invalid during the sampling period, wherein the verification signal is indicative of whether the flip-flop circuit is in the first state or the second state at the end of the sampling period; logic means for receiving the raw verification signal and asserting said raw verification signal to the flip-flop only during the sampling period; and means for setting the flip-flop to the first state before the sampling period.
Claim 8
Dependent Claim
15 words
The memory circuit of claim 1, wherein the nonvolatile memory cells are flash memory cells.
Claim 9
Dependent Claim
158 words
An integrated nonvolatile memory circuit, capable of executing a verification operation including a setup period, a sampling period which follows the setup period, and a hold period which follows the sampling period, said memory circuit including: an array of nonvolatile memory cells; selection means for connecting a selected one of the cells to a first node; first means connected to the first node for generating a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of the selected one of the memory cells and a reference voltage, said raw verification signal being valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; second means for processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by at least a selected margin during the sampling period; and control means for controlling execution of the verification operation.
Claim 10
Dependent Claim
158 words
An integrated nonvolatile memory circuit, capable of executing a verification operation including a setup period, a sampling period which follows the setup period, and a hold period which follows the sampling period, said memory circuit including: an array of nonvolatile memory cells; selection means for connecting a selected one of the cells to a first node; first means connected to the first node for generating a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of the selected one of the memory cells and a reference voltage, said raw verification signal being valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; second means for processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by at least a selected margin during the sampling period; and control means for controlling execution of the verification operation.
Claim 11
Dependent Claim
25 words
The memory circuit of claim 8, wherein the verification signal is indicative of whether the raw verification signal remains valid continuously during the sampling period.
Claim 12
Dependent Claim
26 words
The memory circuit of claim 9, wherein the sampling period is longer than an expected duration of fluctuations due to noise in the raw verification signal.
Claim 13
Dependent Claim
33 words
The memory circuit of claim 9, wherein the first means includes: a sense amplifier having an input terminal connected to the first node and an output terminal which asserts the raw verification signal.
Claim 14
Dependent Claim
101 words
The memory circuit of claim 9, wherein the second means includes: a flip-flop circuit which undergoes a transition from a first state to a second state in response to the raw verification signal going invalid during the sampling period, wherein the verification signal is indicative of whether the flip-flop circuit is in the first state or the second state at the end of the sampling period; logic means for receiving the raw verification signal and asserting said raw verification signal to the flip-flop during the sampling period; and means for setting the flip-flop to the first state before the sampling period.
Claim 15
Dependent Claim
34 words
The memory circuit of claim 8, wherein the control means includes means for enabling the first means during the setup period, and means for receiving and processing the verification signal during the hold period.
Claim 16
Dependent Claim
15 words
The memory circuit of claim 8, wherein the nonvolatile memory cells are flash memory cells.
Claim 17
Dependent Claim
102 words
A verification method for verifying status of a selected memory cell of a nonvolatile memory integrated circuit, including the steps of: (a) receiving a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of the memory cell and a reference voltage, where the raw verification signal is valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; and (b) processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by at least a selected margin during a sampling period.
Claim 18
Dependent Claim
102 words
A verification method for verifying status of a selected memory cell of a nonvolatile memory integrated circuit, including the steps of: (a) receiving a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of the memory cell and a reference voltage, where the raw verification signal is valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; and (b) processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by at least a selected margin during a sampling period.
Claim 19
Dependent Claim
24 words
The method of claim 15, wherein the verification signal is indicative of whether the raw verification signal remains valid continuously during the sampling period.
Claim 20
Dependent Claim
25 words
The method of claim 16, wherein the sampling period is longer than an expected duration of fluctuations due to noise in the raw verification signal.
Claim 21
Dependent Claim
45 words
The method of claim 16, wherein step (a) includes the step of processing a first signal indicative of the measured threshold voltage of the memory cell and a second signal indicative of the reference voltage in a sense amplifier to generate said raw verification signal.
Claim 22
Dependent Claim
57 words
The method of claim 18, also including the steps of: (c) before step (a), executing a verification setup operation in which the sense amplifier is enabled; and (d) after step (b), executing a verification hold operation in which the verification signal is held at least during a cycle of a state machine controlling an overall memory operation.
Claim 23
Dependent Claim
38 words
The method of claim 19, wherein the verification setup operation has sufficient duration so that it includes a portion allowing for settling time of the sense amplifier with respect to the memory cell whose status is being verified.
Claim 24
Dependent Claim
89 words
The method of claim 16, wherein step (b) includes the steps of: setting a flip-flop to a first state before the sampling period; asserting the raw verification signal to the flip-flop during the sampling period, to cause the flip-flop to enter a second state and remain in said second state in response to the raw verification signal going invalid during the sampling period, wherein the verification signal is indicative of whether the flip-flop is in the first state or the second state at the end of the sampling period.
Claim 25
Independent Claim
157 words
A method for erasing at least some memory cells of a nonvolatile memory integrated circuit, including the steps of: (a) programming the memory cells to a first desired threshold voltage; (b) after step (a), verifying status of the memory cells; (c) after step (b), erasing the memory cells to a second desired threshold voltage; and (d) after step (c), verifying status of the memory cells, wherein each of steps (b) and (d) includes the steps of: (e) receiving a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of one of the memory cells and a reference voltage, where the raw verification signal is valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; and (f) processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by a sufficient margin during a sampling period.
Claim 26
Independent Claim
157 words
A method for erasing at least some memory cells of a nonvolatile memory integrated circuit, including the steps of: (a) programming the memory cells to a first desired threshold voltage; (b) after step (a), verifying status of the memory cells; (c) after step (b), erasing the memory cells to a second desired threshold voltage; and (d) after step (c), verifying status of the memory cells, wherein each of steps (b) and (d) includes the steps of: (e) receiving a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of one of the memory cells and a reference voltage, where the raw verification signal is valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; and (f) processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by a sufficient margin during a sampling period.
Claim 27
Dependent Claim
24 words
The method of claim 22, wherein the verification signal is indicative of whether the raw verification signal remains valid continuously during the sampling period.
Claim 28
Dependent Claim
25 words
The method of claim 23, wherein the sampling period is longer than an expected duration of fluctuations due to noise in the raw verification signal.
Claim 29
Dependent Claim
45 words
The method of claim 23, wherein step (e) includes the step of processing a first signal indicative of the measured threshold voltage of the memory cell and a second signal indicative of the reference voltage in a sense amplifier to generate said raw verification signal.
Claim 30
Dependent Claim
60 words
The method of claim 23, wherein step (b) includes the steps of: (g) after step (f), executing a hold operation in which the verification signal is received and processed in a control means; and (h) repeating step (a) if the control means determines as a result of step (g) that at least one of the memory cells is inadequately programmed.
Claim 31
Dependent Claim
57 words
The method of claim 23, wherein step (d) includes the steps of: (g) after step (f), executing a hold operation in which the verification signal is received and processed in a control means; and (h) repeating step (c) if the control means determines during step (g) that at least one of the memory cells is inadequately erased.
Claim 32
Independent Claim
127 words
A method for programming at least one memory cell of a nonvolatile memory integrated circuit, including the steps of: (a) programming the memory cell to a first desired threshold voltage; and (b) after step (a), verifying status of the memory cell, wherein step (b) includes the steps of: (c) receiving a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of the memory cell and a reference voltage, where the raw verification signal is valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; and (d) processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by a sufficient margin during a sampling period.
Claim 33
Independent Claim
127 words
A method for programming at least one memory cell of a nonvolatile memory integrated circuit, including the steps of: (a) programming the memory cell to a first desired threshold voltage; and (b) after step (a), verifying status of the memory cell, wherein step (b) includes the steps of: (c) receiving a raw verification signal indicative of an instantaneous relation between a measured threshold voltage of the memory cell and a reference voltage, where the raw verification signal is valid if the threshold voltage has a desired relation to the reference voltage at an instant of time; and (d) processing the raw verification signal to generate a verification signal indicative of whether the threshold voltage differs from the reference voltage by a sufficient margin during a sampling period.
Claim 34
Dependent Claim
25 words
The method of claim 28, wherein the sampling period is longer than an expected duration of fluctuations due to noise in the raw verification signal.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1999-10-22 | 2000-04-22 | 2000-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-22 | 2004-04-22 | 2004-10-22 | $3760.00 | Window Closed / Lapsed |
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