US5569619A
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Method for forming a capacitor of a semiconductor memory cell
Assignee: SK Hynix Inc
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Filing: 1995-02-28
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Granted: 1996-10-29
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Expires: 2015-02-28
Abstract
Abstract A method for forming a capacitor of a memory cell is disclosed. Steps of the present invention may include: forming a first conductive layer on a substrate; forming a tantalum oxide layer on the first conductive layer; forming a silicon nitride layer on the tantalum oxide layer; carrying out a titanium ion implantation into the tantalum oxide layer; carrying out a heat treatment, which may form a silicon oxide layer between the first conductive layer and the tantalum oxide layer, and which may include titanium oxide in the tantalum oxide layer, and which may change the silicon nitride to an oxynitride layer; and forming a second conductive layer on the oxynitride layer. During the titanium ion implantation process, Ti(OCH 3 ) 4 may be used as a titanium ion source. The titanium ion implantation process may be carried out using the Si 3 N 4 layer as a buffer layer, and with an energy of about 5 KeV-15 KeV, and a dosage of about 10 13 -10 16 .
Inventors
- 👤 Jae-sung Roh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:51
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
112 words
A method of making a capacitor in a semiconductor device comprising the steps of: (a) forming a first conductive layer on a substrate; (b) forming a tantalum oxide layer on the first conductive layer; (c) forming a silicon nitride layer on the tantalum oxide layer; (d) implanting titanium ions into the tantalum oxide layer; (e) carrying out a heat treatment, wherein a silicon oxide layer is formed between the first conductive layer and the tantalum oxide layer, wherein an oxide of titanium is formed in the tantalum oxide layer, and wherein the silicon nitride is converted to comprise an oxynitride layer; and (f) forming a second conductive layer on the oxynitride layer.
Claim 2
Independent Claim
112 words
A method of making a capacitor in a semiconductor device comprising the steps of: (a) forming a first conductive layer on a substrate; (b) forming a tantalum oxide layer on the first conductive layer; (c) forming a silicon nitride layer on the tantalum oxide layer; (d) implanting titanium ions into the tantalum oxide layer; (e) carrying out a heat treatment, wherein a silicon oxide layer is formed between the first conductive layer and the tantalum oxide layer, wherein an oxide of titanium is formed in the tantalum oxide layer, and wherein the silicon nitride is converted to comprise an oxynitride layer; and (f) forming a second conductive layer on the oxynitride layer.
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein the titanium ion implantation is carried out using Ti (OCH 3 ) 4 as a titanium ion source.
Claim 4
Dependent Claim
46 words
The method of claim 1, wherein the titanium ion implantation is carried out using the silicon nitride layer as a buffer layer, and the implantation is carried out with an energy of about 5 KeV and at a dosage of about 10 13 -10 16 .
Claim 5
Dependent Claim
27 words
The method of claim 1, wherein the heat treatment is carried out in an oxygen atmosphere at a temperature of about 700°-900° C. for about 10-30 minutes.
Claim 6
Dependent Claim
19 words
The method of claim 1, wherein the silicon nitride layer is deposited to a thickness of about 10-30 Å.
Claim 7
Dependent Claim
15 words
The method of claim 1, wherein the first and second conductive layers comprise doped polysilicon.
Claim 8
Independent Claim
102 words
A method of forming a capacitor in a semiconductor device comprising the steps of: (a) forming a first conductive layer on a substrate; (b) forming a tantalum oxide layer on the first conductive layer; (c) forming a silicon oxide layer on the tantalum oxide layer; (d) introducing titanium ions into the tantalum oxide layer using the silicon nitride layer as a buffer layer; (e) forming a silicon oxide layer between the first conductive layer and the tantalum oxide layer wherein the silicon nitride layer is converted to comprise an oxinitride layer; and (f) forming a second conductive layer on the oxynitride layer.
Claim 9
Independent Claim
102 words
A method of forming a capacitor in a semiconductor device comprising the steps of: (a) forming a first conductive layer on a substrate; (b) forming a tantalum oxide layer on the first conductive layer; (c) forming a silicon oxide layer on the tantalum oxide layer; (d) introducing titanium ions into the tantalum oxide layer using the silicon nitride layer as a buffer layer; (e) forming a silicon oxide layer between the first conductive layer and the tantalum oxide layer wherein the silicon nitride layer is converted to comprise an oxinitride layer; and (f) forming a second conductive layer on the oxynitride layer.
Claim 10
Dependent Claim
20 words
The method of claim 7, further comprising the step of forming an oxide of titanium in the tantalum oxide layer.
Claim 11
Dependent Claim
53 words
The method of claim 7, wherein the step of forming a silicon oxide layer between the first conductive layer and the tantalum oxide layer comprises a heat treatment, and wherein an oxide of titanium is formed in the tantalum oxide layer, and wherein the silicon nitride is converted to comprise an oxynitride layer.
Claim 12
Dependent Claim
16 words
The method of claim 7, wherein the step of introducing titanium ions comprises an ion implantation.
Claim 13
Dependent Claim
28 words
The method of claim 7, wherein the step of introducing titanium ions comprises an ion, implantation carried out using Ti(OCH 3 ) 4 as a titanium ion source.
Claim 14
Dependent Claim
50 words
The method of claim 7, wherein the step of introducing titanium ions comprises an ion implantation carried out using the silicon nitride layer as a buffer layer, and the implantation is carried out with an energy of about 5 KeV, at a dosage of about 10 13 -10 16 .
Claim 15
Dependent Claim
27 words
The method of claim 9, wherein the heat treatment is carried out in an oxygen atmosphere at a temperature of about 700°-900° C. for about 10-30 minutes.
Claim 16
Dependent Claim
19 words
The method of claim 7, wherein the silicon nitride layer is deposited to a thickness of about 10-30 Å.
Claim 17
Dependent Claim
15 words
The method of claim 7, wherein the first and second conductive layers comprise doped polysilicon.
Claim 18
Dependent Claim
17 words
The method of claim 1, wherein the oxynitride layer comprises SiON and Si 3 N 4 .
References Cited (Backward Citations)
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