US5583368A
Expired / Lapsed
US
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Stacked devices
Assignee: International Business Machines Corp
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Filing: 1994-08-11
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Granted: 1996-12-10
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Expires: 2014-08-11
Abstract
Abstract Chips having subsurface structures within or adjacent a horizontal trench in bulk single crystal semiconductor are presented. Structures include three terminal devices, such as FETs and bipolar transistors, rectifying contacts, such as pn diodes and Schottky diodes, capacitors, and contacts to and connectors between devices. FETs have low resistance connectors to diffusions while retaining low overlap capacitance. A low resistance and low capacitance contact to subsurface electrodes is achieved by using highly conductive subsurface connectors which may be isolated by low dielectric insulator. Stacks of devices are formed simultaneously within bulk single crystal semiconductor. A subsurface CMOS invertor is described. A process for forming a horizontal trench exclusively in heavily doped p+ regions is presented in which porous silicon is first formed in the p+ regions and then the porous silicon is etched.
Inventors
- 👤 Donald M. Kenney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:24
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6744; H10D30/6729; H10D30/673; H10D30/6733; H10D30/6737; H10D30/6739; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D64/27; H10D64/281; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/856; Y; Y10; Y10S; Y10S148/00; Y10S148/164
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
88 words
A semiconductor chip, comprising: a bulk single crystal substrate; a first horizontal trench buried within said bulk single crystal substrate, said first horizontal trench comprising a surface of bulk single crystal substrate, said trench adjacent one of an undoped region, and a lightly doped region, layer of a first material contacting said surface; and an electronic device having a first portion adjacent said first horizontal trench, said first portion being within said bulk single crystal substrate, said device further comprising a second portion within said first horizontal trench.
Claim 2
Dependent Claim
88 words
A semiconductor chip, comprising: a bulk single crystal substrate; a first horizontal trench buried within said bulk single crystal substrate, said first horizontal trench comprising a surface of bulk single crystal substrate, said trench adjacent one of an undoped region, and a lightly doped region, layer of a first material contacting said surface; and an electronic device having a first portion adjacent said first horizontal trench, said first portion being within said bulk single crystal substrate, said device further comprising a second portion within said first horizontal trench.
Claim 3
Dependent Claim
25 words
A semiconductor chip as recited in claim 1, wherein said first material is a first electrically conductive material forming a contact with said first portion.
Claim 4
Dependent Claim
24 words
A semiconductor chip as recited in claim 2, wherein said first electrically conductive material extends through a vertical trench intersecting said first horizontal trench.
Claim 5
Dependent Claim
29 words
A semiconductor chip as recited in claim 2, further comprising a second horizontal trench adjacent said portion, wherein said first electrically conductive material extends through said second horizontal trench.
Claim 6
Dependent Claim
22 words
A semiconductor chip as recited in claim 2, wherein said first electrically conductive material contacts a surface of said first horizontal trench.
Claim 7
Dependent Claim
21 words
A semiconductor chip as recited in claim 5, further comprising a first layer of insulation on said first electrically conductive material.
Claim 8
Dependent Claim
21 words
A semiconductor chip as recited in claim 6, wherein said first layer of insulation does not fill said first horizontal trench.
Claim 9
Dependent Claim
15 words
A semiconductor chip as recited in claim 2, wherein said contact comprises a Schottky barrier.
Claim 10
Dependent Claim
29 words
A semiconductor chip as recited in claim 2, wherein said bulk single crystal semiconductor adjacent said first horizontal trench contains an element diffused from said first electrically conductive material.
Claim 11
Dependent Claim
22 words
A semiconductor chip as recited in claim 1, wherein said device is one of a bipolar transistor, an FET, and a diode.
Claim 12
Dependent Claim
18 words
A semiconductor chip as recited in claim 1, wherein said portion is a collector of a bipolar transistor.
Claim 13
Dependent Claim
30 words
A semiconductor chip as recited in claim 1: said first material being a second layer of insulation; and a second electrically conductive material being on said second layer of insulation.
Claim 14
Dependent Claim
30 words
A semiconductor chip as recited in claim 12, wherein said second layer of insulation is a gate dielectric and said second layer of electrically conductive material comprises a gate conductor.
Claim 15
Dependent Claim
25 words
A semiconductor chip as recited in claim 1, said first material being a second insulator whereby said second insulator provides dielectric isolation for said portion.
Claim 16
Dependent Claim
20 words
A semiconductor chip as recited in claim 14, wherein said second insulator does not completely fill said first horizontal trench.
Claim 17
Dependent Claim
115 words
A semiconductor chip as recited in claim 1, wherein: said portion comprises one of two electrodes within said bulk single crystal semiconductor, said two electrodes comprising a first electrode and a second electrode, said first electrode providing carriers when said device is in operation, said second electrode receiving carriers when said device is in operation; a carrier conduction region formed within said bulk single crystal semiconductor, said carrier conduction region located between said first and said second electrodes; first and second conductive connectors contacting respectively said first and second electrodes; and a control electrode providing control over the flow of carriers in said carrier conduction region, said control electrode provided in said first horizontal trench.
Claim 18
Dependent Claim
80 words
A semiconductor chip as recited in claim 16, wherein said first electrode comprises a first heavily doped region, said second electrode comprises a second heavily doped region, said carrier conduction region comprises a first channel region, and said control electrode comprises a gate electrode comprising a first gate insulator formed on a surface of said first horizontal trench and a first gate conductor formed on a surface of said first gate insulator, said first gate insulator being said first material.
Claim 19
Dependent Claim
77 words
A semiconductor chip as recited in claim 17, further comprising: a second horizontal trench buffed within said bulk single crystal substrate; a second gate insulator formed on a surface of said second horizontal trench; a second gate conductor formed on a surface of said second gate insulator; a third and a fourth heavily doped region adjacent said second gate insulator; and third and fourth conductive connectors in contact respectively with said third and fourth heavily doped regions.
Claim 20
Dependent Claim
21 words
A semiconductor chip as recited in claim 18, wherein said first horizontal trench and said second horizontal trench are the same.
Claim 21
Dependent Claim
31 words
A semiconductor chip as recited in claim 19, wherein said second and forth conductive connectors comprise a vertical conductor interconnecting said second heavily doped region with said fourth heavily doped region.
Claim 22
Dependent Claim
18 words
A semiconductor chip as recited in claims 20, further comprising an invertor, said invertor comprising said interconnected transistors.
Claim 23
Dependent Claim
27 words
A semiconductor chip as recited in claim 18, wherein said first and third heavily doped regions and said second and fourth heavily doped regions are the same.
Claim 24
Dependent Claim
33 words
A semiconductor chip as recited in claim 16, further comprising a second horizontal trench adjacent one of said first and said second electrodes, wherein said conductive connector extends through said second horizontal trench.
Claim 25
Dependent Claim
90 words
A semiconductor chip, comprising: a bulk single crystal substrate; a first horizontal trench buried within said bulk single crystal substrate, said first horizontal trench comprising a surface of bulk single crystal substrate; an electronic device having a first portion adjacent said first horizontal trench, said first portion being within said bulk single crystal substrate, said device further comprising a second portion within said first horizontal trench; a vertical trench intersecting said portion; and a first electrically conductive material extending through said vertical trench and forming a contact with said portion.
Claim 26
Dependent Claim
90 words
A semiconductor chip, comprising: a bulk single crystal substrate; a first horizontal trench buried within said bulk single crystal substrate, said first horizontal trench comprising a surface of bulk single crystal substrate; an electronic device having a first portion adjacent said first horizontal trench, said first portion being within said bulk single crystal substrate, said device further comprising a second portion within said first horizontal trench; a vertical trench intersecting said portion; and a first electrically conductive material extending through said vertical trench and forming a contact with said portion.
Claim 27
Dependent Claim
22 words
A semiconductor chip as recited in claim 24, wherein said first electrically conductive material contacts said surface of said first horizontal trench.
Claim 28
Dependent Claim
21 words
A semiconductor chip as recited in claim 25, further comprising a first layer of insulation on said first electrically conductive material.
Claim 29
Dependent Claim
21 words
A semiconductor chip as recited in claim 26, wherein said first layer of insulation does not fill said first horizontal trench.
Claim 30
Dependent Claim
15 words
A semiconductor chip as recited in claim 24, wherein said contact comprises a Schottky barrier.
Claim 31
Dependent Claim
29 words
A semiconductor chip as recited in claims 24, wherein said bulk single crystal semiconductor adjacent said first horizontal trench contains an element diffused from said first electrically conductive material.
Claim 32
Dependent Claim
22 words
A semiconductor chip as recited in claim 24, wherein said device is one of a bipolar transistor, an FET, and a diode.
Claim 33
Dependent Claim
18 words
A semiconductor chip as recited in claim 24, wherein said portion is a collector of a bipolar transistor.
Claim 34
Dependent Claim
35 words
A semiconductor chip as recited in claim 24, further comprising: a second layer of insulation on a surface of said first horizontal trench; and a second electrically conductive material on said second layer of insulation.
Claim 35
Dependent Claim
30 words
A semiconductor chip as recited in claim 32, wherein said second layer of insulation is a gate dielectric and said second layer of electrically conductive material comprises a gate conductor.
Claim 36
Dependent Claim
32 words
A semiconductor chip as recited in claim 24, further comprising a second insulator formed on a surface of said first horizontal trench whereby said second insulator provides dielectric isolation for said portion.
Claim 37
Dependent Claim
20 words
A semiconductor chip as recited in claim 34, wherein said second insulator does not completely fill said first horizontal trench.
Claim 38
Dependent Claim
115 words
A semiconductor chip as recited in claim 24, wherein: said portion comprises one of two electrodes within said bulk single crystal semiconductor, said two electrodes comprising a first electrode and a second electrode, said first electrode providing carriers when said device is in operation, said second electrode receiving carriers when said device is in operation; a carrier conduction region formed within said bulk single crystal semiconductor, said carrier conduction region located between said first and said second electrodes; first and second conductive connectors contacting respectively said first and second electrodes; and a control electrode providing control over the flow of carriers in said carrier conduction region, said control electrode provided in said first horizontal trench.
Claim 39
Dependent Claim
72 words
A semiconductor chip as recited in claim 36, wherein said first electrode comprises a first heavily doped region, said second electrode comprises a second heavily doped region, said carrier conduction region comprises a first channel region, and said control electrode comprises a gate electrode comprising a first gate insulator formed on a surface of said first horizontal trench and a first gate conductor formed on a surface of said first gate insulator.
Claim 40
Dependent Claim
77 words
A semiconductor chip as recited in claims 37, further comprising: a second horizontal trench buried within said bulk single crystal substrate; a second gate insulator formed on a surface of said second horizontal trench; a second gate conductor formed on a surface of said second gate insulator; a third and a fourth heavily doped region adjacent said second gate insulator; and third and fourth conductive connectors in contact respectively with said third and fourth heavily doped regions.
Claim 41
Dependent Claim
21 words
A semiconductor chip as recited in claim 38, wherein said first horizontal trench and said second horizontal trench are the same.
Claim 42
Dependent Claim
29 words
A semiconductor chip as recited in claim 39, further comprising a vertical conductor interconnecting a first diffusion of said first FET with a second diffusion of said second FET.
Claim 43
Dependent Claim
18 words
A semiconductor chip as recited in claim 40, further comprising an invertor, said invertor comprising said interconnected transistors.
Claim 44
Dependent Claim
27 words
A semiconductor chip as recited in claim 38, wherein said first and third heavily doped regions and said second and fourth heavily doped regions are the same.
Claim 45
Dependent Claim
33 words
A semiconductor chip as recited in claim 36, further comprising a second horizontal trench adjacent one of said first and said second electrodes, wherein said conductive connector extends through said second horizontal trench.
Claim 46
Dependent Claim
153 words
A semiconductor chip, comprising: a bulk crystal semiconductor having a conventional planar surface; a first three-terminal device disposed in a first plane parallel to said surface comprising first and second electrodes within said bulk single crystal semiconductor, and a third control electrode that controls electrical connection between said first and second electrodes when said is operational; a second three-terminal device disposal in a second plane parallel to said surface comprising forth and fifth electrodes within said bulk single crystal semiconductor, and a sixth control electrode that controls electrical connection between said forth and fifth electrodes when said device is operational, a terminal of said second device being vertically displaced with respect to a respective terminal of said first device, said first device being connected to said second device; a vertical trench adjacent said first electrode; and a first conductive connector contacting said first electrode, said first conductive connector extending through said vertical trench.
Claim 47
Dependent Claim
153 words
A semiconductor chip, comprising: a bulk crystal semiconductor having a conventional planar surface; a first three-terminal device disposed in a first plane parallel to said surface comprising first and second electrodes within said bulk single crystal semiconductor, and a third control electrode that controls electrical connection between said first and second electrodes when said is operational; a second three-terminal device disposal in a second plane parallel to said surface comprising forth and fifth electrodes within said bulk single crystal semiconductor, and a sixth control electrode that controls electrical connection between said forth and fifth electrodes when said device is operational, a terminal of said second device being vertically displaced with respect to a respective terminal of said first device, said first device being connected to said second device; a vertical trench adjacent said first electrode; and a first conductive connector contacting said first electrode, said first conductive connector extending through said vertical trench.
Claim 48
Dependent Claim
36 words
A semiconductor chip as recited in claim 44, said first and second three terminal devices being FETs, said first, second, fourth, and fifth electrodes being source/drain regions and said third and sixth control electrodes being gates.
Claim 49
Dependent Claim
28 words
A semiconductor chip as recited in claim 45, said vertically displaced terminal of said second device being said sixth control electrode, said sixth control electrode being a gate.
Claim 50
Dependent Claim
20 words
A semiconductor chip as recited in claim 45, said vertically displaced terminal of said second device comprising a source/drain region.
Claim 51
Dependent Claim
19 words
A semiconductor chip as recited in claim 44, wherein said first device shares an electrode with said second device.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |