Redundancy circuit

Claim 2

In a semiconductor memory device having at least two memory blocks, each memory block having a plurality of normal memory cell arrays and a redundancy memory cell array for replacing a defective memory cell array, a redundancy circuit comprising: at least two redundancy cell array driving means respectively connected to at least two said redundancy memory cell arrays for driving at least two said redundancy memory cell arrays of respective blocks; a defective cell array detection fuse box for detecting address corresponding to said defective memory cell array; a block selection fuse box for selecting one of said plurality of memory blocks; and driving control means for driving one of at least two said redundancy cell array driving means associated with said redundancy memory cell arrays of respective blocks by outputs of said defective cell array detection fuse box and said block selection fuse box.

Claim 3

A redundancy circuit as claimed in claim 1, wherein said block selection fuse box generates at least two block selection signals, and said driving control means comprises at least two logic elements for logic-operating said block selection signal and outputs of said defective-cell-array detection fuse box to supply a logic-operated signal to at least two said redundancy cell array driving means.

Claim 4

In a semiconductor memory device having at least two memory blocks, each memory block having a plurality of memory cell arrays and a redundancy memory cell array for replacing a defective memory cell array, a redundancy circuit comprising: driving voltage generating means for generating a driving voltage to drive redundancy memory cell array of at least two said memory blocks; at least two redundancy cell array driving means respectively connected between said driving voltage generating means and at least two said redundancy memory cell arrays for supplying said driving voltage signal to at least two said redundancy memory cell arrays; a defective-cell-array detection fuse box for detecting address corresponding to said defective memory cell array; a block selection fuse box for selecting said plurality of memory blocks; and driving control means for driving one of at least two said redundancy cell array driving means by outputs of said defective-cell-array detection fuse box and said block selection fuse box.

Claim 5

In a semiconductor memory device having at least two memory blocks, each memory block having a plurality of memory cell arrays and a redundancy memory cell array for replacing a defective memory cell array, a redundancy circuit comprising: driving voltage generating means for generating a driving voltage to drive redundancy memory cell array of at least two said memory blocks; at least two redundancy cell array driving means respectively connected between said driving voltage generating means and at least two said redundancy memory cell arrays for supplying said driving voltage signal to at least two said redundancy memory cell arrays; a defective-cell-array detection fuse box for detecting address corresponding to said defective memory cell array; a block selection fuse box for selecting said plurality of memory blocks; and driving control means for driving one of at least two said redundancy cell array driving means by outputs of said defective-cell-array detection fuse box and said block selection fuse box.

Claim 6

A redundancy circuit as claimed in claim 3, wherein said block selection fuse box generates at least two block selection signals, and said driving control means comprise at least two logic elements for logic-operating said block selection signal and outputs of said defective-cell-array detection fuse box to supply a logic-operated signal to at least two said redundancy cell array driving means.

Claim 7

A redundancy circuit as claimed in claim 4, further comprising voltage control means for controlling operation of said driving voltage generating means by an output of said defective-cell-array detection fuse box and logic value of at least two said block selection signals.

Claim 8

In a semiconductor memory device having at least two memory blocks, each memory block having a plurality of normal memory cell arrays and a redundancy memory cell array for replacing a defective memory cell array, a redundancy circuit comprising: at least two redundancy cell array driving means respectively connected to at least two said redundancy memory cell arrays for driving at least two said redundancy memory cell arrays; a defective cell array detection fuse box for detecting address corresponding to said defective memory cell array; a block selection fuse box for selecting one of said plurality of memory blocks; and driving control means for driving one of at least two said redundancy cell array driving means by outputs of said defective cell array detection fuse box and said block selection fuse box; wherein said block selection fuse box generates at least two block selection signals, and said driving control means comprises at least two logic elements for logic-operating said block selection signal and outputs of said defective-cell-array detection fuse box to supply a logic-operated signal to at least two said redundancy cell array driving means.

Claim 9

In a semiconductor memory device having at least two memory blocks, each memory block having a plurality of normal memory cell arrays and a redundancy memory cell array for replacing a defective memory cell array, a redundancy circuit comprising: at least two redundancy cell array driving means respectively connected to at least two said redundancy memory cell arrays for driving at least two said redundancy memory cell arrays; a defective cell array detection fuse box for detecting address corresponding to said defective memory cell array; a block selection fuse box for selecting one of said plurality of memory blocks; and driving control means for driving one of at least two said redundancy cell array driving means by outputs of said defective cell array detection fuse box and said block selection fuse box; wherein said block selection fuse box generates at least two block selection signals, and said driving control means comprises at least two logic elements for logic-operating said block selection signal and outputs of said defective-cell-array detection fuse box to supply a logic-operated signal to at least two said redundancy cell array driving means.