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US5604381A
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US
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Semiconductor device and method of manufacturing without undercutting conductive lines
Assignee: GlobalFoundries Inc
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Filing: 1995-04-19
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Granted: 1997-02-18
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Expires: 2015-04-19
Abstract
Abstract Undercutting of conductive lines in a dense array on a dielectric layer containing an open field is prevented by providing one or more non-functional components, such as one or more non-functional conductive lines, in the dielectric layer under the dense array of conductive lines.
Inventors
- 👤 Lewis Shen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:36
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/40; H10W20/41; H10W20/43
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
104 words
A semiconductor device comprising: a dielectric layer; a dense array of upper conductive lines on the dielectric layer, wherein: the dielectric layer contains functional circuit components and one or more selectively placed non-functional circuit components such that the dense array of upper conductive lines on the dielectric layer extends over the functional circuit components and over the one or more selectively placed non-functional circuit components; wherein all of the non-functional circuit components included in the device are disposed only directly under portions of the dense array of upper conductive lines; and wherein the distance between upper conductive lines is less than about 1.0 microns.
Claim 2
Dependent Claim
104 words
A semiconductor device comprising: a dielectric layer; a dense array of upper conductive lines on the dielectric layer, wherein: the dielectric layer contains functional circuit components and one or more selectively placed non-functional circuit components such that the dense array of upper conductive lines on the dielectric layer extends over the functional circuit components and over the one or more selectively placed non-functional circuit components; wherein all of the non-functional circuit components included in the device are disposed only directly under portions of the dense array of upper conductive lines; and wherein the distance between upper conductive lines is less than about 1.0 microns.
Claim 3
Dependent Claim
27 words
The semiconductor device according to claim 1, wherein the functional circuit components and one or more non-functional circuit components in the dielectric layer comprise lower conductive lines.
Claim 4
Dependent Claim
20 words
The semiconductor device according to claim 1, wherein the distance between upper conductive lines is less than about 0.7 microns.
Claim 5
Dependent Claim
18 words
The semiconductor device according to claim 2, wherein the distance between lower conductive lines is essentially the same.
Claim 6
Dependent Claim
20 words
The semiconductor device according to claim 4, wherein the distance between lower conductive lines is less than about 1.0 micron.
Claim 7
Dependent Claim
20 words
The semiconductor device according to claim 5, wherein the distance between lower conductive lines is less than about 0.7 microns.
Claim 8
Dependent Claim
62 words
The semiconductor device according to claim 1, wherein the upper conductive lines on the dielectric layer comprise a dense array of functional upper conductive lines associated with an electrical circuit extending over the functional and one or more non-functional lower conductive lines, and wherein the dense array of functional upper conductive lines is bordered by one or more non-functional upper conductive lines.
Claim 9
Dependent Claim
23 words
The semiconductor device according to claims 7, wherein the non-functional upper conductive lines extend for a distance of at least about 2.0 microns.
Claim 10
Dependent Claim
20 words
The semiconductor device according to claim 1, wherein the dielectric layer contains functional circuit components and one non-functional circuit component.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-18 | 2000-08-19 | 2001-02-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-18 | 2004-08-19 | 2005-02-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-18 | 2008-08-19 | 2009-02-18 | $7700.00 | Window Closed / Lapsed |