Patent US2523797A successfully refreshed from Google Patents.
Patent US5615151A successfully refreshed from Google Patents.
US5615151A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit operable and programmable at multiple voltage levels
Assignee: Renesas Electronics Corp
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Filing: 1995-06-07
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Granted: 1997-03-25
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Expires: 2015-06-07
Abstract
Abstract Any one of the internal circuits of a semiconductor integrated circuit is made to operate both at a relatively high operating voltage having a predetermined allowable range and at a relatively low operating voltage also having a predetermined allowable range. The operating voltage is supplied from the outside. Moreover, the operating conditions of the internal circuits constituting the semiconductor integrated circuit are individually set restrictive to the relatively high operating voltage having a predetermined allowable range and to the relatively low operating voltage having a predetermined allowable range. The semiconductor integrated circuit is made to operate selectively at these operating voltages. Since the internal circuits are operated at these two kinds of operating voltages, an arrangement of internal circuits can be simplified and at the same time the semiconductor integrated circuit is usable in not only the conventional system but also a low-voltage one. Moreover, an operating method of the sort that conforms to specifications restrictive to both the relatively high operating voltage as used in the conventional system and the low-voltage system renders extendable a range of uses of such a semiconductor integrated circuit simple in construction.
Inventors
- 👤 Takeshi Furuno
- 👤 Yasuhiro Nakamura
- 👤 Akinori Matsuo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:37
CPC Classifications
G; G11; G11C; G11C16/00; G11C5/00; G11C5/14; G11C5/143
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
200 words
A nonvolatile memory device formed on a semiconductor substrate comprising: an external supply voltage terminal which receives a supply voltage; a supply voltage decision circuit which decides whether or not a value of the supply voltage supplied via said external supply voltage terminal achieves a predetermined value; a plurality of nonvolatile memory cells; a sense amplifier which amplifies a signal from one of the plurality of nonvolatile memory cells; an external output terminal; and an output circuit which is coupled between the sense amplifier and the external output terminal and is coupled to the supply voltage decision circuit, which has a first logic threshold voltage and a second logic threshold voltage being lower than the first logic threshold voltage, which judges data to be outputted, from the amplified signal from the sense amplifier, by using the first logic threshold voltage if the supply voltage decision circuit indicates that the value of the supply voltage achieves the predetermined value, and which judges data to be outputted, from the amplified signal from the sense amplifier, by using the second logic threshold voltage if the supply voltage decision circuit indicates that the value of the supply voltage does not achieve the predetermined value.
Claim 2
Dependent Claim
200 words
A nonvolatile memory device formed on a semiconductor substrate comprising: an external supply voltage terminal which receives a supply voltage; a supply voltage decision circuit which decides whether or not a value of the supply voltage supplied via said external supply voltage terminal achieves a predetermined value; a plurality of nonvolatile memory cells; a sense amplifier which amplifies a signal from one of the plurality of nonvolatile memory cells; an external output terminal; and an output circuit which is coupled between the sense amplifier and the external output terminal and is coupled to the supply voltage decision circuit, which has a first logic threshold voltage and a second logic threshold voltage being lower than the first logic threshold voltage, which judges data to be outputted, from the amplified signal from the sense amplifier, by using the first logic threshold voltage if the supply voltage decision circuit indicates that the value of the supply voltage achieves the predetermined value, and which judges data to be outputted, from the amplified signal from the sense amplifier, by using the second logic threshold voltage if the supply voltage decision circuit indicates that the value of the supply voltage does not achieve the predetermined value.
Claim 3
Dependent Claim
36 words
A nonvolatile memory device according to claim 1, wherein the sense amplifier is coupled to the external supply voltage terminal so that the sense amplifier operates under the supply voltage via the external supply voltage terminal.
Claim 4
Dependent Claim
89 words
A nonvolatile memory device according to claim 2, wherein the output circuit includes: a first circuit coupled to the sense amplifier and having the first logic threshold voltage; a second circuit coupled to the sense amplifier and having the second logic threshold voltage; a selection circuit selecting one of the first circuit and the second circuit in response to a decision from the supply voltage decision circuit; and a buffer coupled to the external output terminal and to the selected one of the first circuit and the second circuit.
Claim 5
Dependent Claim
28 words
A nonvolatile memory device according to claim 3, wherein the selection circuit selects one of an output from the first circuit and an output from the second circuit.
Claim 6
Dependent Claim
54 words
A nonvolatile memory device according to claim 4, wherein each of the first circuit, the second circuit and the selection circuit is coupled to the external supply voltage terminal so that each of the first circuit, the second circuit and the selection circuit operates under the supply voltage via the external supply voltage terminal.
Claim 7
Dependent Claim
166 words
A nonvolatile memory device according to claim 1, further comprising: an external input terminal to which an input signal to be supplied to a nonvolatile memory cell among the plurality of nonvolatile memory cells is supplied; and an input circuit which is coupled between said external input terminal and the nonvolatile memory cell and to said supply voltage decision circuit; which has a first logic threshold voltage and a second logic threshold voltage being lower than the first logic threshold voltage, which judges data to be written to the nonvolatile memory cell, from the input signal, by using the first logic threshold voltage if the supply voltage decision circuit indicates decision that the value of the supply voltage achieves the predetermined value, and which judges data to be written to the nonvolatile memory cell, from the input signal, by using the second logic threshold voltage if the supply voltage decision circuit indicates decision that the value of the supply voltage does not achieve the predetermined value.
Claim 8
Dependent Claim
80 words
A nonvolatile memory device according to claim 6, wherein the input circuit includes: a first input circuit coupled to the external input terminal and having the first logic threshold voltage; a second input circuit coupled to the external input terminal and having the second logic threshold voltage; and a selection circuit selecting one of an output from the first input circuit and an output from the second input circuit in response to the decision from the supply voltage decision circuit.
Claim 9
Dependent Claim
65 words
A nonvolatile memory device according to claim 7, wherein the first input circuit represents the first logic threshold voltage in response to the decision that the value of the supply voltage achieves the predetermined value and wherein the second input circuit represents the second logic threshold voltage in response to the decision that the value of the supply voltage does not achieve the predetermined value.
Claim 10
Dependent Claim
20 words
A nonvolatile memory device according to claim 6, wherein the external input terminal is used as the external output terminal.
Claim 11
Dependent Claim
48 words
A nonvolatile memory device according to claim 6, wherein the output circuit includes a compensation circuit compensating an output current to be supplied to the external output terminal when the supply voltage decision circuit indicates that the value of the supply voltage does not achieve the predetermined value.
Claim 12
Dependent Claim
69 words
A nonvolatile memory device according to claim 10, wherein the output circuit includes: a first output circuit coupled between the sense amplifier and the external output terminal; and a second output circuit coupled between the sense amplifier and the external output terminal as the compensation circuit, wherein the second output circuit operates in response to decision that the value of the supply voltage does not achieve the predetermined value.
Claim 13
Dependent Claim
48 words
A nonvolatile memory device according to claim 1, wherein the output circuit includes a compensation circuit compensating an output current to be supplied to the external output terminal when the supply voltage decision circuit indicates that the value of the supply voltage does not achieve the predetermined value.
Claim 14
Dependent Claim
69 words
A nonvolatile memory device according to claim 12, wherein the output circuit includes: a first output circuit coupled between the sense amplifier and the external output terminal; and a second output circuit coupled between the sense amplifier and the external output terminal as the compensation circuit, wherein the second output circuit operates in response to decision that the value of the supply voltage does not achieve the predetermined value.
Claim 15
Dependent Claim
209 words
A nonvolatile memory device formed on a semiconductor substrate comprising: a plurality of nonvolatile memory cells; an external supply voltage terminal which receives a supply voltage; a supply voltage decision circuit which decides whether or not a value of the supply voltage supplied via said external supply voltage terminal achieves a predetermined value; an external input terminal to which an input signal to be supplied to a nonvolatile memory cell among the plurality of nonvolatile memory cells is supplied; and an input circuit which is coupled between said external input terminal and the nonvolatile memory cell and to said supply voltage decision circuit, which has a first logic threshold voltage and a second logic threshold voltage being lower than the first logic threshold voltage, which judges data to be written to the nonvolatile memory cell, from the input signal, by using the first logic threshold voltage if the supply voltage decision circuit indicates decision that the value of the supply voltage achieves the predetermined value, and which judges data to be written to the nonvolatile memory cell, from the input signal, by using the second logic threshold voltage if the supply voltage decision circuit indicates decision that the value of the supply voltage does not achieve the predetermined value.
Claim 16
Dependent Claim
209 words
A nonvolatile memory device formed on a semiconductor substrate comprising: a plurality of nonvolatile memory cells; an external supply voltage terminal which receives a supply voltage; a supply voltage decision circuit which decides whether or not a value of the supply voltage supplied via said external supply voltage terminal achieves a predetermined value; an external input terminal to which an input signal to be supplied to a nonvolatile memory cell among the plurality of nonvolatile memory cells is supplied; and an input circuit which is coupled between said external input terminal and the nonvolatile memory cell and to said supply voltage decision circuit, which has a first logic threshold voltage and a second logic threshold voltage being lower than the first logic threshold voltage, which judges data to be written to the nonvolatile memory cell, from the input signal, by using the first logic threshold voltage if the supply voltage decision circuit indicates decision that the value of the supply voltage achieves the predetermined value, and which judges data to be written to the nonvolatile memory cell, from the input signal, by using the second logic threshold voltage if the supply voltage decision circuit indicates decision that the value of the supply voltage does not achieve the predetermined value.
Claim 17
Dependent Claim
80 words
A nonvolatile memory device according to claim 14, wherein the input circuit includes: a first input circuit coupled to the external input terminal and having the first logic threshold voltage; a second input circuit coupled to the external input terminal and having the second logic threshold voltage; and a selection circuit selecting one of an output from the first input circuit and an output from the second input circuit in response to the decision from the supply voltage decision circuit.
Claim 18
Dependent Claim
65 words
A nonvolatile memory device according to claim 15, wherein the first input circuit represents the first logic threshold voltage in response to the decision that the value of the supply voltage achieves the predetermined value and wherein the second input circuit represents the second logic threshold voltage in response to the decision that the value of the supply voltage does not achieve the predetermined value.
Claim 19
Dependent Claim
69 words
A nonvolatile memory device according to claim 14, further comprising: an external output terminal; and an output circuit which provides data from a nonvolatile memory cell to the external output terminal and which includes a compensation circuit compensating an output current to be supplied to the external output terminal when the supply voltage decision circuit indicates that the value of the supply voltage does not achieve the predetermined value.
Claim 20
Dependent Claim
69 words
A nonvolatile memory device according to claim 17, wherein the output circuit includes: a first output circuit coupled between the sense amplifier and the external output terminal; and a second output circuit coupled between the sense amplifier and the external output terminal as the compensation circuit, the second output circuit operates in response to the decision that the value of the supply voltages does not achieve the predetermined value.
Claim 21
Dependent Claim
20 words
A nonvolatile memory device according to claim 18, wherein the external input terminal is used as the external output terminal.
Claim 22
Dependent Claim
27 words
A nonvolatile memory device according to claim 18, wherein the first logic threshold voltage and the second logic threshold voltage have values independent from the supply voltage.
Claim 23
Dependent Claim
136 words
A nonvolatile memory device formed on a semiconductor substrate comprising: an external supply voltage terminal which receives a supply voltage; a supply voltage decision circuit which decides whether or not a value of the supply voltage supplied via said external supply voltage terminal achieves a predetermined value; a plurality of nonvolatile memory cells; a sense amplifier which amplifies a signal from one of the plurality of nonvolatile memory cells; an external output terminal; and an output circuit which is coupled between the sense amplifier and the external output terminal and is coupled to the supply voltage decision circuit, and which has a compensation circuit compensating an output current to be supplied to the external output terminal when the supply voltage decision circuit indicates that the value of the supply voltage does not achieve the predetermined value.
Claim 24
Dependent Claim
136 words
A nonvolatile memory device formed on a semiconductor substrate comprising: an external supply voltage terminal which receives a supply voltage; a supply voltage decision circuit which decides whether or not a value of the supply voltage supplied via said external supply voltage terminal achieves a predetermined value; a plurality of nonvolatile memory cells; a sense amplifier which amplifies a signal from one of the plurality of nonvolatile memory cells; an external output terminal; and an output circuit which is coupled between the sense amplifier and the external output terminal and is coupled to the supply voltage decision circuit, and which has a compensation circuit compensating an output current to be supplied to the external output terminal when the supply voltage decision circuit indicates that the value of the supply voltage does not achieve the predetermined value.
Claim 25
Dependent Claim
69 words
A nonvolatile memory device according to claim 21, wherein the output circuit includes: a first output circuit coupled between the sense amplifier and the external output terminal; and a second output circuit coupled between the sense amplifier and the external output terminal as the compensation circuit, wherein the second output circuit operates in response to decision that the value of the supply voltage does not achieve the predetermined value.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-24 | 2000-09-23 | 2001-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-24 | 2004-09-23 | 2005-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-24 | 2008-09-23 | 2009-03-25 | $7700.00 | Window Closed / Lapsed |