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US5621683A
Expired / Lapsed
US
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Semiconductor memory with non-volatile memory transistor
Assignee: US Philips Corp
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Filing: 1995-12-05
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Granted: 1997-04-15
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Expires: 2015-12-05
Abstract
Abstract With a semiconductor memory cell (particularly but not exclusively in a thin-film device) having a non-volatile memory transistor (Tm) as a driver transistor, an adequate difference in output signal (I) can be derived from the cell for the different states of the memory transistor (in spite of poor transistor characteristics,) thereby permitting the assembly of a large number of such memory cells in an array (100). Each memory cell includes a load (TI) driven by the non-volatile memory transistor (Tm). In the different memory states of the memory transistor (Tm) a difference in signal occurs at a node (30) between the memory transistor (Tm) and the load (TI). Each cell also includes a switch (To) which is coupled to the node (30) and switched from one output state to another by the signal at the node (30). The output state of the switch (To) provides the output signal (I) from the cell. Such an arrangement permits the memory transistor (Tm) and the output switch (To) to be optimized for their respective memory function and output function. The memory transistor may be of the dielectric-storage type (MNOST) or of the floating-gate type. In a thin-film circuit memory, the output switch may be a thin-film transistor (To) or a thin-film diode.
Inventors
- 👤 Nigel D. Young
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:12
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/04; G11C16/0408; G11C16/0433; H; H10; H10B; H10B20/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
117 words
A semiconductor memory comprising a plurality of memory cells each including a load driven by a non-volatile memory transistor, the memory transistor having a conduction channel which is conductive in a first memory state of the memory transistor and which is less conductive in a second memory state of the memory transistor so as to provide a difference in signal at a node between the memory transistor and the load, characterized in that each cell further comprises a switch having a control electrode coupled to the node and switched from one output state to another by the signal at the node, and in that the output state of the switch provides an output signal from the cell.
Claim 2
Dependent Claim
117 words
A semiconductor memory comprising a plurality of memory cells each including a load driven by a non-volatile memory transistor, the memory transistor having a conduction channel which is conductive in a first memory state of the memory transistor and which is less conductive in a second memory state of the memory transistor so as to provide a difference in signal at a node between the memory transistor and the load, characterized in that each cell further comprises a switch having a control electrode coupled to the node and switched from one output state to another by the signal at the node, and in that the output state of the switch provides an output signal from the cell.
Claim 3
Dependent Claim
36 words
A semiconductor memory as claimed in claim 1, further characterized in that the switch in each cell comprises an output transistor having a control electrode coupled to the node between the memory transistor and the load.
Claim 4
Dependent Claim
109 words
A semiconductor memory as claimed in claim 2, further characterized in that the output transistor is a field-effect transistor having a gate electrode coupled to the node, and in that the memory cell comprises first and second supply lines, a read/write line and an output line, the memory transistor and its load are connected between the first and second supply lines, source electrodes of the memory transistor and of the output transistor are coupled to the first supply line, a gate electrode of the memory transistor is coupled to the read/write line, and a drain electrode of the output transistor is coupled to the output line of the cell.
Claim 5
Dependent Claim
22 words
A semiconductor memory as claimed in claim 2, further characterized in that the memory transistor and output transistor are thin-film field-effect transistors.
Claim 6
Dependent Claim
31 words
A semiconductor memory as claimed in claim 4, further characterized in that the output transistor is an enhancement field-effect transistor, and the memory transistor and output transistor are n-channel field-effect transistors.
Claim 7
Dependent Claim
51 words
A semiconductor memory as claimed in claim 1, further characterized in that the memory transistor comprises a charge storage region in a gate dielectric between a gate electrode and the conduction channel, and in that the charge state of the charge storage region determines the memory state of the memory transistor.
Claim 8
Dependent Claim
42 words
A semiconductor memory as claimed in claim 6, further characterized in that the memory transistor comprises two different dielectric layers between the gate electrode and the conduction channel, and in that the charge storage region is present between the two dielectric layers.
Claim 9
Dependent Claim
46 words
A semiconductor memory as claimed in claim 1, further characterized in that the load is an enhancement field-effect transistor having gate and drain electrodes coupled to a power supply line and a source electrode coupled to a drain electrode of the memory transistor via the node.
Claim 10
Dependent Claim
47 words
A semiconductor memory as claimed in claim 1, further characterized in that the load is a depletion field-effect transistor having a drain electrode coupled to a power supply line and having gate and source electrodes coupled to a drain electrode of the memory transistor via the node.
Claim 11
Dependent Claim
41 words
A semiconductor memory as claimed in claim 1, further characterized in that the memory is formed in thin-film circuitry on an insulating substrate as part of a larger area electronic device which also comprises other thin-film circuitry on the insulating substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-14 | 2000-10-14 | 2001-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-14 | 2004-10-14 | 2005-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-14 | 2008-10-14 | 2009-04-15 | $7700.00 | Window Closed / Lapsed |