Patent US5621684A successfully refreshed from Google Patents.
US5621684A
Expired / Lapsed
US
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Nonvolatile semiconductor member with different pass potential applied to the first two adjacent word
Assignee: Samsung Electronics Co Ltd
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Filing: 1996-03-29
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Granted: 1997-04-15
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Expires: 2016-03-29
Abstract
Abstract A nonvolatile memory with NAND structured cells includes a plurality of cell units formed of a plurality of series-connected memory transistors, each having a source, a drain, a floating gate and a control gate. A row decoder is connected to the control gates of each memory transistor selects at east one of the cell units and one of the memory transistors within the selected cell unit. During programming, the row decoder causes a different pass potential to be applied to nonselected word lines adjacent to selected word lines than that which is applied to other nonselected word lines. Adjacent memory transistors respectively connected to the drain and source of the selected memory transistor on an unselected bit line are thus rendered nonconductive. Thereafter, the selected memory transistor is charged to a local boost potential when a programming potential is applied thereto, and a variation of its threshold voltage is prevented.
Inventors
- 👤 Tae-Sung Jung
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:38
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/10; G11C16/12; G11C16/08; G11C16/04; G11C16/0483
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
148 words
A nonvolatile semiconductor memory comprising: a plurality of cell units each having a plurality of series-connected memory transistors, each of said memory transistors having a source, a drain, a floating gate and a control gate; and a decoder coupled to said control gates of said memory transistors, said decoder selecting at least one of said cell units and one of said memory transistors within said selected cell unit for programming said cell unit with data corresponding to erased data, said decoder providing a programming potential to said control gate of said selected memory transistor and rendering nonconductive first and second adjacent memory transistors respectively coupled to said drain and said source of said selected memory transistor, said drain and said source of said selected memory transistor being charged to a local boost potential so that said selected memory transistor maintains a threshold voltage corresponding to said erased data.
Claim 2
Dependent Claim
148 words
A nonvolatile semiconductor memory comprising: a plurality of cell units each having a plurality of series-connected memory transistors, each of said memory transistors having a source, a drain, a floating gate and a control gate; and a decoder coupled to said control gates of said memory transistors, said decoder selecting at least one of said cell units and one of said memory transistors within said selected cell unit for programming said cell unit with data corresponding to erased data, said decoder providing a programming potential to said control gate of said selected memory transistor and rendering nonconductive first and second adjacent memory transistors respectively coupled to said drain and said source of said selected memory transistor, said drain and said source of said selected memory transistor being charged to a local boost potential so that said selected memory transistor maintains a threshold voltage corresponding to said erased data.
Claim 3
Dependent Claim
72 words
A nonvolatile semiconductor memory as recited in claim 1, wherein said decoder provides a first pass potential lower than said programming potential to said control gates of unselected memory transistors other than said first and second adjacent memory transistors and said selected memory transistor in said selected cell unit, and provides a second pass potential lower than said first pass potential to said control gates of said first and second memory transistors.
Claim 4
Dependent Claim
27 words
A nonvolatile semiconductor memory as recited in claim 2, wherein said decoder delays providing said programming potential at least until providing said first and second pass potentials.
Claim 5
Dependent Claim
32 words
A nonvolatile semiconductor memory as recited in claim 3, wherein said second pass potential has a potential value higher than a threshold voltage corresponding to programming data different from said erased data.
Claim 6
Dependent Claim
26 words
A nonvolatile semiconductor memory as recited in claim 3, wherein said first and second pass potentials have a boosted potential value for a predetermined time duration.
Claim 7
Dependent Claim
172 words
A nonvolatile semiconductor memory as recited in claim 1, further comprising a plurality of bit lines, and wherein each of said cell units further includes: a selection transistor coupled between one end of said cell unit and a corresponding one of said bit lines, said first adjacent memory transistor being coupled between said selected memory transistor and said selection transistors said second adjacent memory transistor being coupled between said selected memory transistor and an end opposite said one end of said cell unit, said decoder providing a first pass potential lower than said programming potential to said control gates of memory transistors between said first adjacent memory transistor and said one end, providing a second pass potential lower than said first pass potential to said control gate of said first adjacent memory transistor, providing a potential lower than said second pass potential to said control gate of said second adjacent memory transistor, and providing a first potential to a gate of said selection transistor and said corresponding one of said bit lines.
Claim 8
Dependent Claim
18 words
A nonvolatile semiconductor memory as recited in claim 6, wherein said first potential is a power supply potential.
Claim 9
Dependent Claim
22 words
A nonvolatile semiconductor memory as recited in claim 6, further comprising a plurality of data latches respectively connected to said bit lines.
Claim 10
Dependent Claim
59 words
A nonvolatile semiconductor memory as recited in claim 6, wherein said decoder delays providing said second pass potential and said potential lower than said second pass potential until after providing said first pass potential, and delays providing said programming potential at least until it is providing said second pass potential and said potential lower than said second pass potential.
Claim 11
Dependent Claim
169 words
A nonvolatile semiconductor memory comprising: a multiplicity of cell units arranged in a matrix of rows and columns, a row of cell units defining a row block, each cell unit including a plurality of series-connected memory transistors, each of said memory transistors having a drain, a source, a floating gate and a control gate; a plurality of word lines coupled to said control gates of memory transistors within respective ones of said row blocks; and a decoder coupled to said word lines, said decoder selecting one of said word lines within a selected one of said row blocks for programming memory transistors coupled thereto, said decoder providing a first pass potential to remaining word lines within said selected row block other than said selected word line and adjacent ones of said word lines thereto, providing a second pass potential lower than said first pass potential to said adjacent ones of said word lines, and providing a programming potential higher than said first pass potential to said selected word line.
Claim 12
Dependent Claim
169 words
A nonvolatile semiconductor memory comprising: a multiplicity of cell units arranged in a matrix of rows and columns, a row of cell units defining a row block, each cell unit including a plurality of series-connected memory transistors, each of said memory transistors having a drain, a source, a floating gate and a control gate; a plurality of word lines coupled to said control gates of memory transistors within respective ones of said row blocks; and a decoder coupled to said word lines, said decoder selecting one of said word lines within a selected one of said row blocks for programming memory transistors coupled thereto, said decoder providing a first pass potential to remaining word lines within said selected row block other than said selected word line and adjacent ones of said word lines thereto, providing a second pass potential lower than said first pass potential to said adjacent ones of said word lines, and providing a programming potential higher than said first pass potential to said selected word line.
Claim 13
Dependent Claim
135 words
A nonvolatile memory according to claim 10, wherein said decoder provides said potentials such that drains and sources of a first group of said memory transistors coupled to said selected word line are charged to a predetermined potential by said second pass potential and then charged to a higher potential above said predetermined potential by said programming potential such that threshold voltages of said first group of memory transistors are not substantially changed so as to maintain erased data, said decoder providing said potentials such that drains and sources of a second group of said memory transistors coupled to said selected word line are discharged to a ground potential such that threshold voltages of said second group of said memory transistors are changed so as to be programmed to data different from said erased data.
Claim 14
Dependent Claim
31 words
A nonvolatile semiconductor memory as recited in claim 11, wherein said second pass potential is higher than threshold voltages of said second group of memory transistors programmed to said different data.
Claim 15
Independent Claim
124 words
A method of programming a nonvolatile semiconductor memory including a cell unit having a plurality of series-connected memory transistors, each of said memory transistors having a drain, a source, a floating gate and a control gate, said method comprising the steps of: selecting one of said memory transistors for programming with a threshold voltage corresponding to an erased data; applying a first pass potential to control gates of adjacent memory transistors coupled to said drain and said source of said selected memory transistor; applying a second pass potential to control gates of remaining memory transistors other than said selected and said adjacent memory transistors; and applying a programming potential higher than said first pass potential to said control gate of said selected memory transistor.
Claim 16
Independent Claim
124 words
A method of programming a nonvolatile semiconductor memory including a cell unit having a plurality of series-connected memory transistors, each of said memory transistors having a drain, a source, a floating gate and a control gate, said method comprising the steps of: selecting one of said memory transistors for programming with a threshold voltage corresponding to an erased data; applying a first pass potential to control gates of adjacent memory transistors coupled to said drain and said source of said selected memory transistor; applying a second pass potential to control gates of remaining memory transistors other than said selected and said adjacent memory transistors; and applying a programming potential higher than said first pass potential to said control gate of said selected memory transistor.
Claim 17
Dependent Claim
30 words
A method as recited in claim 13, wherein said step of selecting said one of said memory transistors is performed after an erasure of said one of said memory transistors.
Claim 18
Independent Claim
107 words
A method of programming a selected one of series-connected memory transistors within a cell unit in a nonvolatile semiconductor memory after an erasure of said selected memory transistor, said method comprising the steps of: rendering nonconductive first and second adjacent memory transistors coupled to a drain and a source of said selected memory transistor; and charging said drain and said source of said selected memory transistor to a local boost potential by providing a programming potential to a control gate of said selected memory transistor, such that said selected memory transistor maintains an erased data without substantial variation of a threshold voltage corresponding to said erased data.
Claim 19
Independent Claim
107 words
A method of programming a selected one of series-connected memory transistors within a cell unit in a nonvolatile semiconductor memory after an erasure of said selected memory transistor, said method comprising the steps of: rendering nonconductive first and second adjacent memory transistors coupled to a drain and a source of said selected memory transistor; and charging said drain and said source of said selected memory transistor to a local boost potential by providing a programming potential to a control gate of said selected memory transistor, such that said selected memory transistor maintains an erased data without substantial variation of a threshold voltage corresponding to said erased data.
Claim 20
Independent Claim
155 words
A method of programming a selected one of series-connected memory transistors within a cell unit in a nonvolatile semiconductor memory after an erasure of said selected memory transistor, each of said memory transistors having a drain, a source, a floating gate and a control gate, said method comprising the steps of: providing a programming potential to said control gate of said selected memory transistor; providing a first pass potential to said control gate of a first memory transistor adjacent to said selected memory transistor and coupled between a bit line and said selected memory transistor; and providing a second pass potential lower than said programming potential to control gates of memory transistors coupled between said first memory transistor and said bit line, said first pass potential being lower than said second potential, said selected memory transistor maintaining an erased data after said erasure without substantial variation of a threshold voltage corresponding to said erased data.
Claim 21
Independent Claim
155 words
A method of programming a selected one of series-connected memory transistors within a cell unit in a nonvolatile semiconductor memory after an erasure of said selected memory transistor, each of said memory transistors having a drain, a source, a floating gate and a control gate, said method comprising the steps of: providing a programming potential to said control gate of said selected memory transistor; providing a first pass potential to said control gate of a first memory transistor adjacent to said selected memory transistor and coupled between a bit line and said selected memory transistor; and providing a second pass potential lower than said programming potential to control gates of memory transistors coupled between said first memory transistor and said bit line, said first pass potential being lower than said second potential, said selected memory transistor maintaining an erased data after said erasure without substantial variation of a threshold voltage corresponding to said erased data.
Claim 22
Dependent Claim
31 words
A method as recited in claim 16, wherein said step of providing said programming potential is delayed at least until performing said step of providing said first and second pass potentials.
Claim 23
Dependent Claim
44 words
A method as recited in claim 17, further comprising the steps of: providing said first pass potential to said control gate of a second memory transistor adjacent to said selected memory transistor and coupled between a common source line and said selected memory transistor.
Claim 24
Dependent Claim
48 words
A method as recited in claim 17, further comprising the steps of: providing a potential lower than said first pass potential to said control gate of a second memory transistor adjacent to said selected memory transistor and coupled between a common source line and said selected memory transistor.
Claim 25
Dependent Claim
27 words
A method as recited in claim 17, wherein said steps of providing said first and second pass potentials include boosting said potentials for a predetermined time duration.
References Cited (Backward Citations)
US5511022A
Cited
US5402373A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-14 | 2000-10-14 | 2001-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-14 | 2004-10-14 | 2005-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-14 | 2008-10-14 | 2009-04-15 | $7700.00 | Window Closed / Lapsed |