US5646432A
Expired / Lapsed
US
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Semiconductor thin film formed on a supporting substrate
Assignee: Seiko Instruments Inc
•
Filing: 1993-05-05
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Granted: 1997-07-08
•
Expires: 2013-05-05
Abstract
Abstract A semiconductor substrate is provided which has a semiconductor on insulator structure but in which can be formed a thin film integrated circuit having electrical characteristics and microstructure equal to or of greater density than a silicon integrated circuit formed using a bulk single crystal silicon wafer. The semiconductor substrate has a structure which is formed of a sequentially layered single crystal silicon thin film sandwiched between a thermally oxidized silicon film and a silicon oxide or silicon nitride film, an element smoothing layer, a fluoro-epoxy series resin adhesive layer, and a supporting substrate. The single crystal silicon thin film can have integrated circuit devices formed in a sub-micron geometry similar to that of a bulk single crystal silicon. A transparent glass or a bulk single crystal silicon wafer can be used as a supporting substrate. Therefore the semiconductor thin film can integrate a highly fine, dense and compact semiconductor integrated circuit or semiconductor optical element. The semiconductor thin film element has a transparent optical detection region or optical modulation region with 100 million pixels or more.
Inventors
- 👤 Tadao Iwaki
- 👤 Tsuneo Yamazaki
- 👤 Katsuki Matsushita
- 👤 Shigeru Senbonmatsu
- 👤 Ryuichi Takano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:28
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; G06; G06E; G06E3/00; G06E3/001; G06E3/003; H; H10; H10D; H10D86/00; H10D86/201; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W72/00; H10W72/071; H10W72/073; H10W72/30; G02F2202/00; G02F2202/10; G02F2202/105; H10W72/90; H10W72/921; H10W72/923; H10W72/931; H10W72/934
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
101 words
A semiconductor substrate comprising: a single crystal semiconductor thin film layer having an element region which includes at least a portion of a first surface thereof; an element smoothing layer formed on the element region of the single crystal semiconductor thin film layer; and a supporting substrate laminated to the element smoothing layer by a resin adhesive layer such that a rough surface formed by a circuit element formed on the first surface of the single crystal semiconductor thin film layer is smoothed by the element smoothing layer to avoid separation of the semiconductor thin film layer and the supporting substrate.
Claim 2
Dependent Claim
101 words
A semiconductor substrate comprising: a single crystal semiconductor thin film layer having an element region which includes at least a portion of a first surface thereof; an element smoothing layer formed on the element region of the single crystal semiconductor thin film layer; and a supporting substrate laminated to the element smoothing layer by a resin adhesive layer such that a rough surface formed by a circuit element formed on the first surface of the single crystal semiconductor thin film layer is smoothed by the element smoothing layer to avoid separation of the semiconductor thin film layer and the supporting substrate.
Claim 3
Dependent Claim
71 words
A semiconductor substrate according to claim 1; further comprising an insulating layer formed between the element smoothing layer and the single crystal semiconductor thin film layer to release an internal stress in the single crystal semiconductor thin film layer for protecting a circuit element formed thereon; and a silicon oxide layer formed on a surface of the single crystal silicon thin film layer at the opposite side of the insulating layer.
Claim 4
Dependent Claim
17 words
A semiconductor substrate according to claim 1; wherein the supporting substrate comprises a single crystal silicon substrate.
Claim 5
Dependent Claim
15 words
A semiconductor substrate according to claim 1; wherein the supporting substrate comprises a glass substrate.
Claim 6
Dependent Claim
26 words
A semiconductor substrate according to claim 1; wherein the resin adhesive layer comprises a material selected from an imide type resin and an epoxy type resin.
Claim 7
Dependent Claim
14 words
A semiconductor substrate according to claim 5; wherein the resin adhesive layer includes fluorine.
Claim 8
Dependent Claim
17 words
A semiconductor substrate according to claim 1; wherein the element smoothing layer comprises a silicon oxide film.
Claim 9
Dependent Claim
26 words
A semiconductor substrate according to claim 1; wherein the element smoothing layer comprises a material selected from an imide type resin and an epoxy type resin.
Claim 10
Dependent Claim
19 words
A semiconductor substrate according to claim 1; wherein the resin adhesive has a Shore hardness of at least 80.
Claim 11
Dependent Claim
19 words
A semiconductor substrate according to claim 1; wherein the resin adhesive layer includes a plurality of dispersed fine particles.
Claim 12
Dependent Claim
34 words
A semiconductor substrate according to claim 1; wherein the difference in linear coefficient of expansion between the supporting substrate and the single crystal semiconductor thin film layer is less than 1.5×10 -6 /° C.
Claim 13
Dependent Claim
77 words
A semiconductor substrate according to claim 1; further comprising an insulated gate field effect transistor having a source region and a drain region formed in the element region of the single crystal semiconductor thin film layer, a channel region formed in the element region of the single crystal semiconductor thin film layer between the source region and the drain region, an insulating film formed over the channel region, and a gate electrode formed over the insulating film.
Claim 14
Dependent Claim
30 words
A semiconductor substrate according to claim 1; further comprising an optical detecting element comprising a PN junction formed in the element region of the single crystal semiconductor thin film layer.
Claim 15
Dependent Claim
51 words
A semiconductor substrate according to claim 13; wherein the optical detecting element includes a PIN type junction comprising a P-type region formed in the element region of the single crystal semiconductor thin film layer, an I-type region interfacing with the P-type region, and an N-type region interfacing with the I-type region.
Claim 16
Dependent Claim
129 words
A semiconductor substrate according to claim 1; further comprising a second semiconductor thin film layer having a second element region which includes at least a portion of a first surface thereof, and a second element smoothing layer formed on the second element region of the second semiconductor thin film layer, the second semiconductor thin film layer and the second element smoothing layer being formed between the resin adhesive layer and the single crystal semiconductor thin film layer such that a rough surface formed by a second circuit element formed in the first surface of the second semiconductor thin film layer is smoothed by the second element smoothing layer to avoid separation of the single crystal semiconductor thin film layer, the second semiconductor thin film layer, and the supporting substrate.
Claim 17
Dependent Claim
52 words
A semiconductor substrate according to claim 15; wherein the second circuit element formed in the second semiconductor thin film layer is electrically connected to the circuit element formed on the single crystal semiconductor thin film layer through a joint hole formed in the second element smoothing layer and the resin adhesive layer.
Claim 18
Dependent Claim
193 words
A liquid crystal light valve comprising: a drive substrate having a drive electrode and a drive circuit for electrically exciting the drive electrode; an opposite substrate opposing the drive substrate; and a liquid crystal layer formed between the drive substrate and the opposite substrate; wherein the drive substrate comprises a single crystal semiconductor thin film layer, an element smoothing layer formed on the single crystal semiconductor thin film layer, a supporting substrate laminated on the element smoothing layer by a resin adhesive layer and a semiconductor circuit element formed in a surface of the single crystal semiconductor thin film layer contacting the element smoothing layer, such that the element smoothing layer is effective to smooth a rough surface formed by the semiconductor circuit element to avoid separation of the semiconductor thin film layer and the supporting substrate; and wherein the drive circuit comprised of the semiconductor circuit element and the drive electrode is arranged integrally on the single crystal semiconductor thin film layer, whereby an optical transmittance through the light valve is controlled by applying a voltage across the liquid crystal layer when the drive electrode is electrically excited by the drive circuit.
Claim 19
Dependent Claim
193 words
A liquid crystal light valve comprising: a drive substrate having a drive electrode and a drive circuit for electrically exciting the drive electrode; an opposite substrate opposing the drive substrate; and a liquid crystal layer formed between the drive substrate and the opposite substrate; wherein the drive substrate comprises a single crystal semiconductor thin film layer, an element smoothing layer formed on the single crystal semiconductor thin film layer, a supporting substrate laminated on the element smoothing layer by a resin adhesive layer and a semiconductor circuit element formed in a surface of the single crystal semiconductor thin film layer contacting the element smoothing layer, such that the element smoothing layer is effective to smooth a rough surface formed by the semiconductor circuit element to avoid separation of the semiconductor thin film layer and the supporting substrate; and wherein the drive circuit comprised of the semiconductor circuit element and the drive electrode is arranged integrally on the single crystal semiconductor thin film layer, whereby an optical transmittance through the light valve is controlled by applying a voltage across the liquid crystal layer when the drive electrode is electrically excited by the drive circuit.
Claim 20
Dependent Claim
28 words
A liquid crystal light valve according to claim 17; wherein the resin adhesive layer comprises a material selected from an imide type resin and an epoxy type resin.
Claim 21
Dependent Claim
55 words
A liquid crystal light valve according to claim 17; wherein the drive circuit includes a plurality of drive elements arranged in a matrix form, the drive electrode is formed of a plurality of pixel electrodes arranged in a matrix form, and wherein respective pixel electrodes are selectively excited by corresponding ones of the drive elements.
Claim 22
Dependent Claim
108 words
A semiconductor optical detector comprising: a semiconductor optical detecting element; and a drive electrode connected to and exciting the semiconductor optical detecting element in accordance with a predetermined signal; wherein the semiconductor optical detecting element and the drive electrode are formed in a drive substrate comprising a single crystal semiconductor thin film bonded to a supporting substrate; the semiconductor optical detecting element being formed in the single crystal semiconductor thin film, and the drive electrode being formed integrally on the single crystal semiconductor thin film, whereby an optical detection signal is controlled by activating the optical detecting element when the drive electrode is excited by a drive circuit.
Claim 23
Dependent Claim
108 words
A semiconductor optical detector comprising: a semiconductor optical detecting element; and a drive electrode connected to and exciting the semiconductor optical detecting element in accordance with a predetermined signal; wherein the semiconductor optical detecting element and the drive electrode are formed in a drive substrate comprising a single crystal semiconductor thin film bonded to a supporting substrate; the semiconductor optical detecting element being formed in the single crystal semiconductor thin film, and the drive electrode being formed integrally on the single crystal semiconductor thin film, whereby an optical detection signal is controlled by activating the optical detecting element when the drive electrode is excited by a drive circuit.
Claim 24
Dependent Claim
53 words
A semiconductor optical detector according to claim 20; wherein the optical detecting element is arranged in a matrix form and comprises a plurality of silicon photodiodes, the drive electrode comprises a plurality of corresponding drive electrodes, and the drive circuit includes means for scanning and detecting optical detection signals from the silicon photodiodes.
Claim 25
Dependent Claim
75 words
A semiconductor substrate comprising: a semiconductor thin film having a first device region; a smoothing layer formed on the semiconductor thin film and contacting the first device region to smooth a rough surface formed by a circuit element formed in the first device region; and a supporting substrate laminated to the smoothing layer by an adhesive layer such that separation of the semiconductor thin film and the supporting substrate is prevented by the smoothing layer.
Claim 26
Dependent Claim
75 words
A semiconductor substrate comprising: a semiconductor thin film having a first device region; a smoothing layer formed on the semiconductor thin film and contacting the first device region to smooth a rough surface formed by a circuit element formed in the first device region; and a supporting substrate laminated to the smoothing layer by an adhesive layer such that separation of the semiconductor thin film and the supporting substrate is prevented by the smoothing layer.
Claim 27
Dependent Claim
39 words
A semiconductor substrate according to claim 22; further comprising an insulation layer formed between the smoothing layer and the semiconductor thin film effective to release an internal stress in the semiconductor thin film for protecting the first device region.
Claim 28
Dependent Claim
15 words
A semiconductor substrate according to claim 22; wherein the supporting substrate comprises single crystal silicon.
Claim 29
Dependent Claim
15 words
A semiconductor substrate according to claim 22; wherein the supporting substrate comprises a transparent material.
Claim 30
Dependent Claim
13 words
A semiconductor substrate according to claim 25; wherein the transparent material comprises glass.
Claim 31
Dependent Claim
13 words
A semiconductor substrate according to claim 25; wherein the transparent material comprises quartz.
Claim 32
Dependent Claim
25 words
A semiconductor substrate according to claim 22; wherein the adhesive layer comprises a material selected from an imide type resin and an epoxy type resin.
Claim 33
Dependent Claim
13 words
A semiconductor substrate according to claim 22; wherein the adhesive layer includes fluorine.
Claim 34
Dependent Claim
16 words
A semiconductor substrate according to claim 22; wherein the smoothing layer comprises a silicon dioxide film.
Claim 35
Dependent Claim
25 words
A semiconductor substrate according to claim 22; wherein the smoothing layer comprises a material selected from an imide type resin and an epoxy type resin.
Claim 36
Dependent Claim
18 words
A semiconductor substrate according to claim 22; wherein the adhesive has a Shore hardness of at least 80.
Claim 37
Dependent Claim
16 words
A semiconductor substrate according to claim 22; wherein the adhesive layer includes fine particles dispersed throughout.
Claim 38
Dependent Claim
31 words
A semiconductor substrate according to claim 22; wherein the difference in linear coefficient of expansion between the supporting substrate and the semiconductor thin film is less than 1.5×10 -6 /° C.
Claim 39
Dependent Claim
55 words
A semiconductor substrate according to claim 22; further including an insulated gate field effect transistor having a source region and a drain region formed in the first device region of the semiconductor thin film, a channel region formed between the source region and the drain region, and a gate electrode formed over the channel region.
Claim 40
Dependent Claim
28 words
A semiconductor substrate according to claim 22; further including an optical detecting element comprising a PN junction formed in the first device region of the semiconductor thin film.
Claim 41
Dependent Claim
44 words
A semiconductor substrate according to claim 36; wherein the optical detecting element includes a PIN type junction comprising a P-type region formed in the semiconductor thin film, an I-type region interfacing with the P-type region, and an N-type region interfacing with the I-type region.
Claim 42
Dependent Claim
40 words
A semiconductor substrate according to claim 36; further comprising a second smoothing layer formed between the adhesive layer and the supporting substrate; and a second device region formed in a surface of the supporting substrate contacting the second smoothing layer.
Claim 43
Dependent Claim
45 words
A semiconductor substrate according to claim 38; wherein the second device region formed in the supporting substrate is electrically connected to the first device region formed in the semiconductor thin film through a joint hole formed in the second smoothing layer and the adhesive layer.
Claim 44
Dependent Claim
82 words
A semiconductor substrate according to claim 1; further comprising a second element region which includes at least a portion of a first surface of the supporting substrate, and a second element smoothing layer formed between the resin adhesive layer and the first surface of the supporting substrate to smooth a rough surface formed by a circuit element formed in the second element region of the supporting substrate to avoid separation between the supporting substrate and the single crystal semiconductor thin film layer.
Claim 45
Dependent Claim
59 words
A semiconductor substrate according to claim 40; wherein a first circuit element formed in the element region of the single crystal semiconductor thin film layer is electrically connected to a second circuit element formed in the second element region of the supporting substrate through a joint hole formed in the resin adhesive layer and the second element smoothing layer.
Claim 46
Dependent Claim
198 words
A semiconductor substrate comprising: a first semiconductor thin film layer having a first element region which includes at least a portion of a first surface thereof; a first element smoothing layer formed over the first element region; a second semiconductor thin film layer having a second element region which includes at least a portion of a first surface thereof; a second element smoothing layer formed over the second element region; a first adhesive film layer for bonding the first semiconductor thin film layer and the first element smoothing layer to the second semiconductor thin film layer and the second element smoothing layer to form a multilayer circuit; and a supporting substrate bonded to the multilayer circuit by a second adhesive layer; wherein the first element smoothing layer is effective to smooth a rough surface formed by a circuit element formed in the first element region of the first semiconductor thin film, and the second element smoothing layer is effective to smooth a rough surface formed by a circuit element formed in the second element region of the second semiconductor thin film to thereby avoid separation of the first and second semiconductor thin film layers and the supporting substrate.
Claim 47
Dependent Claim
198 words
A semiconductor substrate comprising: a first semiconductor thin film layer having a first element region which includes at least a portion of a first surface thereof; a first element smoothing layer formed over the first element region; a second semiconductor thin film layer having a second element region which includes at least a portion of a first surface thereof; a second element smoothing layer formed over the second element region; a first adhesive film layer for bonding the first semiconductor thin film layer and the first element smoothing layer to the second semiconductor thin film layer and the second element smoothing layer to form a multilayer circuit; and a supporting substrate bonded to the multilayer circuit by a second adhesive layer; wherein the first element smoothing layer is effective to smooth a rough surface formed by a circuit element formed in the first element region of the first semiconductor thin film, and the second element smoothing layer is effective to smooth a rough surface formed by a circuit element formed in the second element region of the second semiconductor thin film to thereby avoid separation of the first and second semiconductor thin film layers and the supporting substrate.
Claim 48
Dependent Claim
104 words
A semiconductor substrate comprising: a semiconductor thin film layer having a first element region which includes at least a first surface thereof; a first element smoothing layer formed on the first element region; a supporting substrate for supporting the semiconductor thin film layer; and an adhesive layer for bonding the supporting substrate and the semiconductor thin film layer on the side having the first element smoothing layer; wherein the first element smoothing layer is effective to smooth a rough surface caused by a circuit element formed in the first element region to avoid separation of the semiconductor thin film layer and the supporting substrate.
Claim 49
Dependent Claim
104 words
A semiconductor substrate comprising: a semiconductor thin film layer having a first element region which includes at least a first surface thereof; a first element smoothing layer formed on the first element region; a supporting substrate for supporting the semiconductor thin film layer; and an adhesive layer for bonding the supporting substrate and the semiconductor thin film layer on the side having the first element smoothing layer; wherein the first element smoothing layer is effective to smooth a rough surface caused by a circuit element formed in the first element region to avoid separation of the semiconductor thin film layer and the supporting substrate.
Claim 50
Dependent Claim
21 words
A semiconductor substrate according to claim 43; wherein the semiconductor thin film layer comprises a single crystal silicon thin film layer.
Claim 51
Dependent Claim
20 words
A semiconductor substrate according to claim 43; wherein the semiconductor thin film layer comprises a thinned single crystal silicon wafer.
Claim 52
Dependent Claim
51 words
A semiconductor substrate according to claim 43; further comprising a first insulating layer formed between the first element smoothing layer and the first surface of the semiconductor thin film layer to release an internal stress in the semiconductor thin film layer for protecting a circuit element formed in the element region.
Claim 53
Dependent Claim
27 words
A semiconductor substrate according to claim 46; further comprising a second insulating layer formed on a second surface of the semiconductor thin film opposite the first surface.
Claim 54
Dependent Claim
81 words
A semiconductor substrate according to claim 43; further comprising a second element region formed in the supporting substrate and including at least a portion of a first surface thereof, and a second element smoothing layer formed between the adhesive layer and the first surface of the supporting substrate to smooth a rough surface caused by a circuit element formed in the second element region of the supporting substrate to prevent separation of the semiconductor thin film layer and the supporting substrate.
Claim 55
Dependent Claim
55 words
A semiconductor substrate according to claim 48; wherein a circuit element formed in the first element region of the semiconductor thin film layer is electrically connected to a circuit element formed in the second element region of the supporting substrate through a joint hole formed in the second element smoothing layer and the adhesive layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-07-07 | 2001-01-06 | 2001-07-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-07-07 | 2005-01-06 | 2005-07-08 | $3760.00 | Window Closed / Lapsed |
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