US5657282A — Semiconductor memory device with stress circuit a…

Claim 1

Independent Claim 100 words

A semiconductor memory circuit comprising: a first stress voltage supplying terminal that supplies a first stress voltage and is coupled to a first word line; a second stress voltage supplying terminal that supplies a second stress voltage and is coupled to a second word line adjacent to said first word line; and a stress enable circuit that controls the supply of said first and second stress voltages to said first and second word lines such that said first and second stress voltages having different voltage levels are respectively supplied to said first and second word lines during a test operation.

Claim 2

Dependent Claim 100 words

A semiconductor memory circuit comprising: a first stress voltage supplying terminal that supplies a first stress voltage and is coupled to a first word line; a second stress voltage supplying terminal that supplies a second stress voltage and is coupled to a second word line adjacent to said first word line; and a stress enable circuit that controls the supply of said first and second stress voltages to said first and second word lines such that said first and second stress voltages having different voltage levels are respectively supplied to said first and second word lines during a test operation.

Claim 3

Dependent Claim 47 words

The semiconductor memory circuit as set forth in claim 1, wherein said first and second stress voltage supplying terminals are coupled to external pins such that said first and second stress voltages are applied from an external source in a package state of said semiconductor memory circuit.

Claim 4

Dependent Claim 42 words

The semiconductor memory circuit as set forth in claim 1, wherein said first and second stress voltage supplying terminals are coupled to pads to which said first and second stress voltages are applied in a wafer state of said semiconductor memory circuit.

Claim 5

Dependent Claim 35 words

The semiconductor memory circuit as set forth in claim 1, wherein said first and second stress voltage supplying terminals respectively supply said first and second stress voltages to said first and second word lines simultaneously.

Claim 6

Dependent Claim 193 words

A semiconductor memory circuit having a pair of bit lines, and a sense amplifier for performing a sensing operation on said bit lines in response to a sensing control signal, said semiconductor memory circuit comprising: a first stress voltage supply terminal that supplies a first stress voltage and is coupled to a first word line; a second stress voltage supply terminal that supplies a second stress voltage and is coupled to a second word line adjoining said first word line; delay means, coupled to said first and second stress voltage supply terminals, for generating a delay signal which is delayed by a predetermined time after at least one of said first and second stress voltages is applied to said word lines from said first and second stress voltage supply terminals; sense amplifier control means for supplying said sensing control signal to said sense amplifier in response to said delay signal, such that said sense amplifier performs said sensing operation on said bit lines after receipt of said delay signal so that data in a memory cell coupled to said bit lines is sufficiently transferred to said bit lines in a stress mode operation.

Claim 7

Dependent Claim 193 words

A semiconductor memory circuit having a pair of bit lines, and a sense amplifier for performing a sensing operation on said bit lines in response to a sensing control signal, said semiconductor memory circuit comprising: a first stress voltage supply terminal that supplies a first stress voltage and is coupled to a first word line; a second stress voltage supply terminal that supplies a second stress voltage and is coupled to a second word line adjoining said first word line; delay means, coupled to said first and second stress voltage supply terminals, for generating a delay signal which is delayed by a predetermined time after at least one of said first and second stress voltages is applied to said word lines from said first and second stress voltage supply terminals; sense amplifier control means for supplying said sensing control signal to said sense amplifier in response to said delay signal, such that said sense amplifier performs said sensing operation on said bit lines after receipt of said delay signal so that data in a memory cell coupled to said bit lines is sufficiently transferred to said bit lines in a stress mode operation.

Claim 8

Dependent Claim 47 words

The semiconductor memory circuit as set forth in claim 2, wherein said first and second stress voltage supply terminals are coupled to external pins such that said first and second stress voltages are applied from an external source in a package state of said semiconductor memory circuit.

Claim 9

Dependent Claim 42 words

The semiconductor memory circuit as set forth in claim 2, wherein said first and second stress voltage supplying terminals are coupled to pads to which said first and second stress voltages are applied in a wafer state of said semiconductor memory circuit.

Claim 10

Dependent Claim 174 words

A semiconductor memory circuit having a memory cell, a bit line for sensing data of said memory cell, a sense amplifier for performing a sensing operation on said bit line, a sense amplifier control circuit for driving said sensing operation of said sense amplifier and a row decoder for selecting said memory cell in response to an input of an address, said semiconductor memory circuit comprising: a stress enable circuit that generates a stress enable signal during a test operation and enables said test operation; a stress voltage supplying circuit coupled to said stress enable circuit, that supplies at least one of a first stress voltage and a second stress voltage in response to said stress enable signal of said stress enable circuit during said test operation; and a sensing delay control circuit coupled to said stress voltage supplying circuit, which, after receiving said at least one of said first and second stress voltages, causes said sense amplifier control circuit to delay driving said sensing operation of said sense amplifier during said test operation.

Claim 11

Dependent Claim 174 words

A semiconductor memory circuit having a memory cell, a bit line for sensing data of said memory cell, a sense amplifier for performing a sensing operation on said bit line, a sense amplifier control circuit for driving said sensing operation of said sense amplifier and a row decoder for selecting said memory cell in response to an input of an address, said semiconductor memory circuit comprising: a stress enable circuit that generates a stress enable signal during a test operation and enables said test operation; a stress voltage supplying circuit coupled to said stress enable circuit, that supplies at least one of a first stress voltage and a second stress voltage in response to said stress enable signal of said stress enable circuit during said test operation; and a sensing delay control circuit coupled to said stress voltage supplying circuit, which, after receiving said at least one of said first and second stress voltages, causes said sense amplifier control circuit to delay driving said sensing operation of said sense amplifier during said test operation.

Claim 12

Dependent Claim 105 words

The semiconductor memory circuit as set forth in claim 8, wherein said stress enable circuit comprises: a stress enable terminal that receives a signal indicating said test operation; a driver circuit coupled to said stress enable terminal that amplifies said signal supplied from said stress enable terminal and generates said stress enable signal; and a pull-down transistor having a gate coupled to said driver circuit, that receives said stress enable signal and controls a discharge path of said row decoder such that said first and second stress voltages respectively supplied to said first and second word lines is prevented from discharging during said test operation.

Claim 13

Dependent Claim 118 words

The semiconductor memory circuit as set forth in claim 9, wherein said stress voltage supplying circuit comprises: a first stress voltage supplying terminal that generates said first stress voltage; a second stress voltage supplying terminal that generates said second stress voltage; a first transfer transistor coupled between said first stress voltage supplying terminal and a first word line that supplies said first stress voltage to said first word line; a second transfer transistor coupled between said second stress voltage supplying terminal and a second word line that supplies said second stress voltage to said second word line; and a third transfer transistor that supplies said stress enable signal to each gate of said first and second transfer transistors.

Claim 14

Dependent Claim 90 words

The semiconductor memory circuit as set forth in claim 10, wherein said sensing delay control circuit comprises: a first delay circuit that receives and delays said first stress voltage; a second delay circuit that receives and delays said second stress voltage; and a logic circuit that receives outputs of said first and second delay circuits, and generates a logic signal to control a delay that prevents said sense amplifier control circuit from driving said sensing operation of said sense amplifier when either said first or second stress voltage is supplied.

Claim 15

Dependent Claim 47 words

The semiconductor memory circuit as set forth in claim 10, wherein said first and second stress voltage supplying terminals are coupled to external pins such that said first and second stress voltages are applied from an external source in a package state of said semiconductor memory circuit.

Claim 16

Dependent Claim 42 words

The semiconductor memory circuit as set forth in claim 10, wherein said first and second stress voltage supplying terminals are coupled to pads to which said first and second stress voltages are applied in a wafer state of said semiconductor memory circuit.

Claim 17

Independent Claim 80 words

A method for supplying a stress voltage of a semiconductor memory circuit comprising: supplying a first stress voltage to a first word line; supplying a second stress voltage to a second word line adjacent to said first word line; and controlling the supply of said first and second stress voltages to said first and second word lines such that stress voltages of a different voltage level are respectively supplied to said first and second word lines during a test operation.

Claim 18

Independent Claim 80 words

A method for supplying a stress voltage of a semiconductor memory circuit comprising: supplying a first stress voltage to a first word line; supplying a second stress voltage to a second word line adjacent to said first word line; and controlling the supply of said first and second stress voltages to said first and second word lines such that stress voltages of a different voltage level are respectively supplied to said first and second word lines during a test operation.

Claim 19

Dependent Claim 39 words

The method for supplying a stress voltage of a semiconductor memory circuit as set forth in claim 14, wherein said controlling step includes simultaneously supplying said first and second stress voltages to said first and second word lines, respectively.

Claim 20

Independent Claim 160 words

A method for supplying a stress voltage of a semiconductor memory circuit having a memory cell, a bit line for sensing data of said memory cell, a sense amplifier for performing a sensing operation on said bit line and a sense amplifier control circuit for driving said sensing operation of said sense amplifier, said method comprising: supplying a first stress voltage to a first word line; supplying a second stress voltage to a second word line adjacent to said first word line; and logically combining detected voltage levels of said first and second stress voltages and delaying an operation of said sense amplifier control circuit in response to a received combination level such that during a test operation said sensing operation of said bit line is delayed until after said received combination level of said first and second stress voltages is respectively supplied to said first and second word lines so that a test of said memory cell is implemented.

Claim 21

Independent Claim 160 words

A method for supplying a stress voltage of a semiconductor memory circuit having a memory cell, a bit line for sensing data of said memory cell, a sense amplifier for performing a sensing operation on said bit line and a sense amplifier control circuit for driving said sensing operation of said sense amplifier, said method comprising: supplying a first stress voltage to a first word line; supplying a second stress voltage to a second word line adjacent to said first word line; and logically combining detected voltage levels of said first and second stress voltages and delaying an operation of said sense amplifier control circuit in response to a received combination level such that during a test operation said sensing operation of said bit line is delayed until after said received combination level of said first and second stress voltages is respectively supplied to said first and second word lines so that a test of said memory cell is implemented.

Claim 22

Independent Claim 201 words

A method for supplying a stress voltage of a semiconductor memory circuit having a memory cell, a bit line for sensing data of said memory cell, a sense amplifier for performing a sensing operation on said bit line, a sense amplifier control circuit for driving the sensing operation of said sense amplifier and a row decoder for selecting said memory cell in response to an input of an address, said method comprising: generating an enable signal during a test operation and enabling said test operation; supplying at least one of a first stress voltage and a second stress voltage in response to said enable signal during said test operation; and detecting the supply of said at least one of said first and second stress voltages and delaying an operation of said sense amplifier control circuit during said test operation such that during said test operation said first and second stress voltages are respectively supplied to word lines adjacent to each other in response to said enable signal and a state of a memory cell selected by said word line is sensed after a predetermined delay from said detected supply of said at least one of said first and second stress voltages.

Claim 23

Independent Claim 201 words

A method for supplying a stress voltage of a semiconductor memory circuit having a memory cell, a bit line for sensing data of said memory cell, a sense amplifier for performing a sensing operation on said bit line, a sense amplifier control circuit for driving the sensing operation of said sense amplifier and a row decoder for selecting said memory cell in response to an input of an address, said method comprising: generating an enable signal during a test operation and enabling said test operation; supplying at least one of a first stress voltage and a second stress voltage in response to said enable signal during said test operation; and detecting the supply of said at least one of said first and second stress voltages and delaying an operation of said sense amplifier control circuit during said test operation such that during said test operation said first and second stress voltages are respectively supplied to word lines adjacent to each other in response to said enable signal and a state of a memory cell selected by said word line is sensed after a predetermined delay from said detected supply of said at least one of said first and second stress voltages.

Claim 24

Dependent Claim 76 words

The method for supplying a stress voltage of a semiconductor memory circuit as set forth in claim 17, wherein said enable signal generating step comprises: detecting said test operation; amplifying a signal supplied when said test operation is detected and generating said enable signal; and controlling a discharge path of said row decoder such that said first and second stress voltages respectively supplied to said adjacent word lines are prevented from discharging during said test operation.

Claim 25

Dependent Claim 89 words

The method for supplying a stress voltage of a semiconductor memory circuit as set forth in claim 18, wherein said stress voltage supplying step comprises: generating said first stress voltage; generating said second stress voltage; supplying said first stress voltage to a first one of said adjacent word lines; supplying said second stress voltage to a second one of said adjacent word lines; and receiving said enable signal and controlling the supply of said first and second stress voltages to said first and second word lines in response thereto.

Claim 26

Dependent Claim 78 words

The method for supplying a stress voltage of a semiconductor memory circuit as set forth in claim 19, wherein said sensing delay step comprises: receiving and delaying said first stress voltage; receiving and delaying said second stress voltage; and logically combining said delayed first and second stress voltages, and generating a signal for preventing said sense amplifier control circuit from driving said sensing operation of said sense amplifier when either said first or second stress voltage is supplied.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2000-08-11	2001-02-10	2001-08-12	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2004-08-11	2005-02-10	2005-08-12	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2008-08-11	2009-02-10	2009-08-12	$7700.00	Window Closed / Lapsed

Semiconductor memory device with stress circuit and method for supplying a stress voltage thereof

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