Abstract The present invention relates to a semiconductor integrated circuit. In greater detail, the present invention relates to a semiconductor integrated circuit which conducts calculations using a voltage adding function by means of capacity and threshold operations. The semiconductor integrated circuit in accordance with the present invention is characterized in that, in a circuit wherein the output of a first inverter circuit and the input of a second inverter circuit are connected at a first contact point, the output of the second inverter and the input of the first inverter are connected at a second contact point, and a means is provided for generating a difference in potential between the first contact point and the second contact point, an electrically floating electrode and a plurality of input electrodes, which are provided via capacity elements with this electrode, are provided, and a means is provided for in effect determining the difference in potential by means of the potentials applied to the input electrodes.
A semiconductor integrated circuit, comprising a first inverter having an input and an output; a second inverter having an input connected to said first inverter output at a first contact point and an output connected to said first inverter input at a second contact point; an electrode operatively connected to one of said first contact point and said second contact point; and a plurality of input electrodes capacitively coupled with said electrode, the potential difference between said first contact point and said second contact point determined by the respective potentials applied to said input electrodes.
Claim 2
Dependent Claim
95 words
A semiconductor integrated circuit, comprising a first inverter having an input and an output; a second inverter having an input connected to said first inverter output at a first contact point and an output connected to said first inverter input at a second contact point; an electrode operatively connected to one of said first contact point and said second contact point; and a plurality of input electrodes capacitively coupled with said electrode, the potential difference between said first contact point and said second contact point determined by the respective potentials applied to said input electrodes.
Claim 3
Dependent Claim
30 words
The semiconductor integrated circuit according to claim 1, wherein said electrode is operatively connected to one of said first contact point and said second contact point through a switch element.
Claim 4
Dependent Claim
107 words
A semiconductor integrated circuit, comprising a first inverter having an input and an output; a second inverter having an input connected to said first inverter output at a first contact point and an output connected to said first inverter input at a second contact point; and an MOS transistor connected in series with one of said first inverter and said second inverter, said MOS transistor having a floating gate electrode, said MOS transistor floating gate electrode capacitively coupled with a plurality of input electrodes, the potential difference between said first contact point and said second contact point determined by the respective potentials applied to said input electrodes.
Claim 5
Dependent Claim
107 words
A semiconductor integrated circuit, comprising a first inverter having an input and an output; a second inverter having an input connected to said first inverter output at a first contact point and an output connected to said first inverter input at a second contact point; and an MOS transistor connected in series with one of said first inverter and said second inverter, said MOS transistor having a floating gate electrode, said MOS transistor floating gate electrode capacitively coupled with a plurality of input electrodes, the potential difference between said first contact point and said second contact point determined by the respective potentials applied to said input electrodes.