US5693556A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making an antifuse metal post structure
Assignee: QuickLogic Corp
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Filing: 1995-12-29
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Granted: 1997-12-02
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Expires: 2015-12-29
Abstract
Abstract A method of forming an antifuse device. According to the preferred method of the present invention, a first metal layer comprising a first bulk conductive layer and the top capping layer is formed. Next, the capping layer is etched into a first patterned capping layer. An antifuse layer is then formed over the patterned capping layer and over the first bulk conductive layer. Next, a second metal layer comprising a bottom barrier layer and a second bulk conductive layer is formed on the antifuse layer. The second metal layer and the antifuse layer are then etched to form a metal post on the capping layer. The first bulk conductive layer is then etched in alignment with the patterned capping layer to form a first metal interconnect.
Inventors
- 👤 James M. Cleeves
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
124 words
A method of forming an antifuse comprising the steps of: forming a first metal layer, said first metal layer comprising a first bulk conductive layer and a top capping layer; etching said top capping layer into a first patterned capping layer; forming an antifuse layer over said first patterned capping layer and over said first bulk conductive layer; forming a second metal layer comprising a bottom barrier layer and a second bulk conductive layer on said antifuse layer; etching said second metal layer and said antifuse layer to form an antifuse metal post on said capping layer; and after forming said antifuse metal post etching said first bulk conductive layer in alignment with said first patterned capping layer to form a first metal interconnect.
Claim 2
Independent Claim
124 words
A method of forming an antifuse comprising the steps of: forming a first metal layer, said first metal layer comprising a first bulk conductive layer and a top capping layer; etching said top capping layer into a first patterned capping layer; forming an antifuse layer over said first patterned capping layer and over said first bulk conductive layer; forming a second metal layer comprising a bottom barrier layer and a second bulk conductive layer on said antifuse layer; etching said second metal layer and said antifuse layer to form an antifuse metal post on said capping layer; and after forming said antifuse metal post etching said first bulk conductive layer in alignment with said first patterned capping layer to form a first metal interconnect.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein said antifuse layer is amorphous silicon.
Claim 4
Dependent Claim
11 words
The method of claim 1 wherein said capping layer comprising titanium-tungsten.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein said bottom barrier layer comprises titanium-tungsten.
Claim 6
Dependent Claim
13 words
The method of claim 1 wherein said first bulk conductive layer comprises aluminum.
Claim 7
Dependent Claim
13 words
The method of claim 1 wherein said second bulk conductive layer comprises aluminum.
Claim 8
Dependent Claim
14 words
The method of claim 6 wherein said bottom barrier layer comprises a refractory metal.
Claim 9
Dependent Claim
40 words
The method of claim 1 further comprising the steps of blanket depositing an insulating layer over said antifuse metal post and said first metal interconnect and planarizing said insulating layer to uncover the top surface of said antifuse metal post.
Claim 10
Dependent Claim
27 words
The method of claim 8 further comprising the step of forming a second interconnect on said planarized insulating layer and in contact with said antifuse metal post.
Claim 11
Dependent Claim
13 words
The method of claim 1 wherein said capping layer comprises a refractory metal.
Claim 12
Independent Claim
170 words
A method of forming an anti-fuse comprising the steps of: forming a first metal layer comprising aluminum; forming a first titanium-tungsten layer on said first metal layer, patterning said first titanium-tungsten layer into a first pattern desired for a first metal interconnect; forming an amorphous silicon layer on said first titanium-tungsten layer patterned into a first pattern for a first metal interconnect and said first metal layer comprising aluminum; forming a second titanium-tungsten layer on said amorphous silicon layer; forming a second metal layer comprising aluminum on said second titanium-tungsten layer; forming and patterning a photoresist layer to form a photoresist mask over a location of said second metal layer where an antifuse is desired; etching said second metal layer comprising aluminum, said second titanium-tungsten layer and said amorphous silicon layer in alignment with said photoresist mask; and after etching said second metal layer comprising aluminum, said second titanium-tungsten layer and said amorphous silicon layer, etching said first metal layer comprising aluminum in alignment with said patterned first titanium-tungsten layer.
Claim 13
Independent Claim
170 words
A method of forming an anti-fuse comprising the steps of: forming a first metal layer comprising aluminum; forming a first titanium-tungsten layer on said first metal layer, patterning said first titanium-tungsten layer into a first pattern desired for a first metal interconnect; forming an amorphous silicon layer on said first titanium-tungsten layer patterned into a first pattern for a first metal interconnect and said first metal layer comprising aluminum; forming a second titanium-tungsten layer on said amorphous silicon layer; forming a second metal layer comprising aluminum on said second titanium-tungsten layer; forming and patterning a photoresist layer to form a photoresist mask over a location of said second metal layer where an antifuse is desired; etching said second metal layer comprising aluminum, said second titanium-tungsten layer and said amorphous silicon layer in alignment with said photoresist mask; and after etching said second metal layer comprising aluminum, said second titanium-tungsten layer and said amorphous silicon layer, etching said first metal layer comprising aluminum in alignment with said patterned first titanium-tungsten layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-01 | 2001-06-02 | 2001-12-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-01 | 2005-06-02 | 2005-12-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-01 | 2009-06-02 | 2009-12-02 | $7700.00 | Window Closed / Lapsed |