Array having multiple channel structures with continuously doped interchannel regions

Claim 2

A display comprising: a two-dimensional M×N array comprising: M scan lines; N data lines; and for each of a set of pairs of values (m, n), cell circuitry connected to the mth scan line and the nth data line; the cell circuitry comprising: a capacitive element having a data lead for receiving signals from the nth data line; during operation of the array circuitry, the capacitive element storing a level of charge within one of two or more distinct voltage bands for a storage period; the voltage level indicating one of a set of two or more values; and a polysilicon thin film transistor (poly-Si TFT) for electrically connecting the data lead to the nth data line under control of the mth scan line: the poly-Si TFT comprising: first and second channels electrically connected in series between the nth data line and the data lead; the first and second channels each being conductive; the first and second channels having dopant particles at a first average dopant density; first and second gates electrically connected to the mth scan line; the first gate extending across the first channel; the second gate extending across the second channel; and between the first and second channels, an intrachannel region that has a continuous distribution of dopant particles; the continuous distribution being a second average dopant density, the second average dopant density being less than the first average dopant density.

Claim 3

An article of manufacture comprising: a substrate with a surface at which circuitry can be formed; and array circuitry formed at the surface of the substrate, the array circuitry comprising: a set of M scan lines, where M is greater than 1; a set of N data lines, where N is greater than 1; and for each of a set of pairs of values (m, n), cell circuitry connected to the mth scan line and the nth data line; the cell circuitry comprising: a component having a data lead for receiving signals from or providing signals to the nth data line; and connecting circuitry for electrically connecting the data lead to the nth data line under control of the mth scan line; the connecting circuitry comprising: a thin film transistor electrically connected between the nth data line and the data lead; the thin film transistor including: a series of Q channels in a semiconductor layer, where Q is two or more; first and second channel lead regions; the first channel lead region being electrically connected between the nth data line and a first one of the Q channels; the second channel lead region being electrically connected between a Qth one of the Q channels and the data lead; the first and second channel lead regions each being conductive; the first and second channel lead regions both including dopant particles at a first average dopant density; and (Q-1) intrachannel regions in the semiconductor layer, with one of the (Q-1) intrachannel regions being between each pair of adjacent channels in the series; each of the intrachannel regions being uniformly doped and including dopant particles at approximately a second average dopant density; the second average dopant density being less than the first average dopant density; and Q gate regions, each gate region being a part of a layer other than the semiconductor layer; for each value of q from 1 through Q, the qth gate region extending across the part of the semiconductor layer at the qth channel; each of the Q gate regions being electrically connected to the mth scan line so that, when the mth scan line is at a first voltage, the Q channels are all highly conductive and so that, when the mth scan line is at a second voltage, the Q channels only pass leakage current; the dopant particles in the uniformly doped intrachannel regions together having a distribution that controls reverse gate bias leakage current through the Q channels and that does not significantly reduce ON current through the Q channels.

Claim 4

An article of manufacture comprising: a substrate with a surface at which circuitry can be formed; and array circuitry formed at the surface of the substrate, the array circuitry comprising: a set of M scan lines, where M is greater than 1; a set of N data lines, where N is greater than 1; and for each of a set of pairs of values (m, n), cell circuitry connected to the mth scan line and the nth data line; the cell circuitry comprising: a component having a data lead for receiving signals from or providing signals to the nth data line; and connecting circuitry for electrically connecting the data lead to the nth data line under control of the mth scan line; the connecting circuitry comprising: a thin film transistor electrically connected between the nth data line and the data lead; the thin film transistor including: a series of Q channels in a semiconductor layer, where Q is two or more; first and second channel lead regions; the first channel lead region being electrically connected between the nth data line and a first one of the Q channels; the second channel lead region being electrically connected between a Qth one of the Q channels and the data lead; the first and second channel lead regions each being conductive; the first and second channel lead regions both including dopant particles at a first average dopant density; and (Q-1) intrachannel regions in the semiconductor layer, with one of the (Q-1) intrachannel regions being between each pair of adjacent channels in the series; each of the intrachannel regions being uniformly doped and including dopant particles at approximately a second average dopant density; the second average dopant density being less than the first average dopant density; and Q gate regions, each gate region being a part of a layer other than the semiconductor layer; for each value of q from 1 through Q, the qth gate region extending across the part of the semiconductor layer at the qth channel; each of the Q gate regions being electrically connected to the mth scan line so that, when the mth scan line is at a first voltage, the Q channels are all highly conductive and so that, when the mth scan line is at a second voltage, the Q channels only pass leakage current; the dopant particles in the uniformly doped intrachannel regions together having a distribution that controls reverse gate bias leakage current through the Q channels and that does not significantly reduce ON current through the Q channels.

Claim 5

The article of claim 2 in which the first and second channel leads are formed in the semiconductor layer.

Claim 6

The article of claim 3 in which the array circuitry is driven with a driving technique; the second average dopant density being above a low dopant density at which ON current equals half the ON current that would occur if the second average dopant density were equal to the first average dopant density; the second average dopant density further being below a high dopant density at which reverse bias leakage current equals a maximum permissible leakage current that can occur under a worst-case driving condition for the driving technique.

Claim 7

The article of claim 2 in which Q=2; the Q channels including a first channel and a second channel, separated by an intrachannel region; the first channel lead being connected to receive a source voltage and the second channel lead being connected to receive a drain voltage; the array circuitry including a first junction between the intrachannel region and the first channel and a second junction between the second channel lead and the second channel; a first depletion region occurring at the first junction and a second depletion region occurring at the second junction; voltage drop between the drain voltage and the source voltage being divided between the first depletion region and the second depletion region; voltage drop across the first depletion region spreading across a longer distance than across the second depletion region.

Claim 8

The article of claim 2 in which the semiconductor layer is a polysilicon layer.

Claim 9

The article of claim 2 in which the first voltage is a high voltage and the second voltage is a low voltage.

Claim 10

The article of claim 2 in which each of the Q gate regions is part of a gate layer.

Claim 11

The article of claim 2 in which the second average dopant density is sufficiently great that a current that flows between the first and second channel leads when the mth scan line is at the first voltage is at least half as great as a current that would flow when the mth scan line is at the first voltage if the second average dopant density were equal to the first average dopant density.

Claim 12

The article of claim 9 in which the first and second channel lead regions include the dopant particles at an average dopant density of approximately 2E20 particles per cubic centimeter.

Claim 13

The article of claim 2 in which the dopant particles in the first and second channel lead regions and in the intrachannel regions are particles of an n-type dopant.

Claim 14

The article of claim 2 in which each of the intrachannel regions is uniformly doped.

Claim 15

The article of claim 2 in which each of the intrachannel regions includes the dopant particles at an average dopant density between 2E15 and 2E19 particles per cubic centimeter.

Claim 16

The article of claim 2 in which each of the intrachannel regions includes the dopant particles at an average dopant density between 2E17 and 2E18 particles per cubic centimeter.

Claim 17

The article of claim 2 in which each of the intrachannel regions includes the dopant particles at an average dopant density of approximately 1E18 particles per cubic centimeter.

Claim 18

The article of claim 2 in which each of the intrachannel regions includes the dopant particles at an average dopant density of approximately 1E17 particles per cubic centimeter.

Claim 19

The article of claim 2 in which Q is two.

Claim 20

The article of claim 2 in which the scan lines are parallel to each other; the data lines are parallel to each other; and the scan lines are perpendicular to the data lines.

Claim 21

The article of claim 2 in which the array is a two-dimensional array.

Claim 22

The article of claim 2 in which the substrate is an insulating substrate.

Claim 23

The article of claim 2 in which the distribution of dopant particles in the (Q-1) intrachannel regions ensures that reverse gate bias leakage current through the Q channels is approximately constant across a range of reverse gate bias voltages that occurs during operation of the array circuitry.

Claim 24

The article of claim 2 in which the cell circuitry's component includes a capacitive element that, during operation of the array circuitry, stores a level of charge within one of two or more distinct voltage bands for a storage period; the distribution of dopant particles in the (Q-1) intrachannel regions ensuring that reverse gate bias leakage current through the Q channels is sufficiently low that the level of charge stored by the capacitive element remains within its voltage band during the storage period.

Claim 25

The article of claim 2 in which the article is a light valve; the cell circuitry's component including a capacitive element that stores a level of charge during operation of the array circuitry; the level of charge stored by the capacitive element controlling part of an image.

Claim 26

The article of claim 2 in which the article is a sensor array; the cell circuitry's component including a capacitive element that stores a level of charge during operation of the array circuitry; the level of charge stored by the capacitive element indicating intensity of part of an image.

Claim 27

The article of claim 2 in which the article is a memory; the cell circuitry's component including a capacitive element that stores a level of charge during operation of the array circuitry; the level of charge stored by the capacitive element indicating information.

Claim 28

An article of manufacture comprising: a substrate with a surface at which circuitry can be formed; and two-dimensional array circuitry formed at the surface of the substrate, the array circuitry comprising: a set of M scan lines, where M is greater than 1; a set of N data lines, where N is greater than 1; and for each of a set of pairs of values (m, n), cell circuitry connected to the mth scan line and the nth data line; the cell circuitry comprising: a capacitive element having a data lead for receiving signals from or providing signals to the nth data line; during operation of the array circuitry, the capacitive element storing a level of charge within one of two or more distinct voltage bands for a storage period; and a polysilicon thin film transistor (poly-Si TFT) for electrically connecting the data lead to the nth data line under control of the mth scan line; the poly-Si TFT comprising: a first channel lead electrically connected to the nth data line and a second channel lead electrically connected to the data lead; the first and second channel leads including a first average dopant density; first and second channels in series between the first and second channel leads; the first channel being electrically connected to the first channel lead and the second channel being electrically connected to the second channel lead; first and second gates electrically connected to the mth scan line; the first gate extending across the first channel; the second gate extending across the second channel; and between the first and second channels, an intrachannel region that has a continuous distribution of dopant particles; the intrachannel region including a second average dopant density; the second average dopant density being lower than the first average dopant density; the second average dopant density being sufficiently high that ON current through the poly-Si TFT is at least as great as half of an ON current that would flow if the second average dopant density were equal to the first average dopant density; the second average dopant density being sufficiently low to control reverse gate bias leakage current through the poly-Si TFT; the intrachannel region of each poly-Si TFT having a distribution of dopant particles that ensures that the reverse gate bias leakage currents through the poly-Si TFTs are approximately constant across a range of reverse gate bias voltages that occurs during operation of the array circuitry; the distribution of dopant particles of the intrachannel region of each poly-Si TFT further ensuring that reverse gate bias leakage current through the TFT is sufficiently low that the level of charge stored by the capacitive element remains within its voltage band during the storage period.

Claim 29

An article of manufacture comprising: a substrate with a surface at which circuitry can be formed; and two-dimensional array circuitry formed at the surface of the substrate, the array circuitry comprising: a set of M scan lines, where M is greater than 1; a set of N data lines, where N is greater than 1; and for each of a set of pairs of values (m, n), cell circuitry connected to the mth scan line and the nth data line; the cell circuitry comprising: a capacitive element having a data lead for receiving signals from or providing signals to the nth data line; during operation of the array circuitry, the capacitive element storing a level of charge within one of two or more distinct voltage bands for a storage period; and a polysilicon thin film transistor (poly-Si TFT) for electrically connecting the data lead to the nth data line under control of the mth scan line; the poly-Si TFT comprising: a first channel lead electrically connected to the nth data line and a second channel lead electrically connected to the data lead; the first and second channel leads including a first average dopant density; first and second channels in series between the first and second channel leads; the first channel being electrically connected to the first channel lead and the second channel being electrically connected to the second channel lead; first and second gates electrically connected to the mth scan line; the first gate extending across the first channel; the second gate extending across the second channel; and between the first and second channels, an intrachannel region that has a continuous distribution of dopant particles; the intrachannel region including a second average dopant density; the second average dopant density being lower than the first average dopant density; the second average dopant density being sufficiently high that ON current through the poly-Si TFT is at least as great as half of an ON current that would flow if the second average dopant density were equal to the first average dopant density; the second average dopant density being sufficiently low to control reverse gate bias leakage current through the poly-Si TFT; the intrachannel region of each poly-Si TFT having a distribution of dopant particles that ensures that the reverse gate bias leakage currents through the poly-Si TFTs are approximately constant across a range of reverse gate bias voltages that occurs during operation of the array circuitry; the distribution of dopant particles of the intrachannel region of each poly-Si TFT further ensuring that reverse gate bias leakage current through the TFT is sufficiently low that the level of charge stored by the capacitive element remains within its voltage band during the storage period.

Claim 30

An article of manufacture comprising: a substrate with a surface at which circuitry can be formed; and array circuitry formed at the surface of the substrate, the array circuitry comprising: a set of M scan lines, where M is greater than 1; a set of N data lines, where N is greater than 1; and for each of a set of pairs of values (m, n), cell circuitry connected to the mth scan line and the nth data line; the cell circuitry comprising: a component having a data lead for receiving signals from or providing signals to the nth data line; and connecting circuitry for electrically connecting the data lead to the nth data line under control of the mth scan line; the connecting circuitry comprising: a part of a semiconductor layer electrically connected between the nth data line and the data lead; the part of the semiconductor layer including: a series of Q channels, where Q is two or more; (Q-1) intrachannel regions, with one of the (Q-1) intrachannel regions being between each pair of adjacent channels in the series; first and second channel lead regions; the first channel lead region being electrically connected between the nth data line and a first one of the Q channels; the second channel lead region being electrically connected between a Qth one of the Q channels and the data lead; the first and second channel lead regions each being conductive; the first and second channel lead regions both including dopant particles at a first average dopant density; each of the intrachannel regions including dopant particles at a second average dopant density; the second average dopant density being less than the first average dopant density: and Q gate regions, each gate region being a part of a layer other than the semiconductor layer; for each value of q from 1 through Q, the qth gate region extending across the part of the semiconductor layer at the qth channel; each of the Q gate regions being electrically connected to the mth scan line so that, when the mth scan line is at a first voltage, the Q channels are all highly conductive and so that, when the mth scan line is at a second voltage, the Q channels only pass leakage current; the part of the semiconductor layer including, in each of the (Q-1) intrachannel regions, a continuous distribution of dopant particles; the distributions of dopant particles in the intrachannel regions together being a distribution that controls reverse gate bias leakage current through the Q channels and that does not significantly reduce ON current through the Q channels.

Claim 31

An article of manufacture comprising: a substrate with a surface at which circuitry can be formed; and array circuitry formed at the surface of the substrate, the array circuitry comprising: a set of M scan lines, where M is greater than 1; a set of N data lines, where N is greater than 1; and for each of a set of pairs of values (m, n), cell circuitry connected to the mth scan line and the nth data line; the cell circuitry comprising: a component having a data lead for receiving signals from or providing signals to the nth data line; and connecting circuitry for electrically connecting the data lead to the nth data line under control of the mth scan line; the connecting circuitry comprising: a part of a semiconductor layer electrically connected between the nth data line and the data lead; the part of the semiconductor layer including: a series of Q channels, where Q is two or more; (Q-1) intrachannel regions, with one of the (Q-1) intrachannel regions being between each pair of adjacent channels in the series; first and second channel lead regions; the first channel lead region being electrically connected between the nth data line and a first one of the Q channels; the second channel lead region being electrically connected between a Qth one of the Q channels and the data lead; the first and second channel lead regions each being conductive; the first and second channel lead regions both including dopant particles at a first average dopant density; each of the intrachannel regions including dopant particles at a second average dopant density; the second average dopant density being less than the first average dopant density: and Q gate regions, each gate region being a part of a layer other than the semiconductor layer; for each value of q from 1 through Q, the qth gate region extending across the part of the semiconductor layer at the qth channel; each of the Q gate regions being electrically connected to the mth scan line so that, when the mth scan line is at a first voltage, the Q channels are all highly conductive and so that, when the mth scan line is at a second voltage, the Q channels only pass leakage current; the part of the semiconductor layer including, in each of the (Q-1) intrachannel regions, a continuous distribution of dopant particles; the distributions of dopant particles in the intrachannel regions together being a distribution that controls reverse gate bias leakage current through the Q channels and that does not significantly reduce ON current through the Q channels.