US5723385A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wafer edge seal ring structure
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1996-12-16
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Granted: 1998-03-03
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Expires: 2016-12-16
Abstract
Abstract A wafer edge seal ring structure is disclosed to provide reduced particulate contaminant generation during wafer processing of high density integrated circuits. The structure is formed by delimiting the deposition of layers at the peripheral edges of wafers. It is shown that as each layer is deposited and then essentially trimmed back from the edge of the wafer through a judicious use of mask and etching, and/or edge-bead rinsing (EBR) and later sealed by wafer edge exposure (WEE), the otherwise present abnormal growth of layers are prevented from building up into protrusions at the edge of wafer that later peel or break up to form particulate matter and fine dust. The method, which is also disclosed, teaches how each layer is recessed at appropriate distances from the wafer edge and how the whole ring structure is sealed against attacking particles.
Inventors
- 👤 Chih-Heng Shen
- 👤 Hui-Tzu Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:46
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; H10P; H10P50/00; H10P95/00
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
157 words
A method for providing a wafer edge seal ring structure, comprising the steps of: providing a substrate; depositing PolySi layer on said substrate; forming a circumferential recess in said PolySi layer; depositing a first interlevel dielectric layer on said PolySi layer; forming a circumferential recess in said first level dielectric layer; depositing a first metal layer on said first interlevel layer; forming a circumferential recess in said first metal layer; depositing a second interlevel dielectric layer on said first metal layer; forming a circumferential recess in said second interlevel dielectric layer; depositing a second metal layer on said second interlevel dielectric layer; forming a circumferential recess in said second metal layer; depositing a third interlevel dielectric layer on said second metal layer; forming a circumferential recess in said third interlevel dielectric layer; depositing a third metal layer on said third interlevel dielectric layer; forming a circumferential recess in said third metal layer; and depositing a passivation layer.
Claim 2
Independent Claim
157 words
A method for providing a wafer edge seal ring structure, comprising the steps of: providing a substrate; depositing PolySi layer on said substrate; forming a circumferential recess in said PolySi layer; depositing a first interlevel dielectric layer on said PolySi layer; forming a circumferential recess in said first level dielectric layer; depositing a first metal layer on said first interlevel layer; forming a circumferential recess in said first metal layer; depositing a second interlevel dielectric layer on said first metal layer; forming a circumferential recess in said second interlevel dielectric layer; depositing a second metal layer on said second interlevel dielectric layer; forming a circumferential recess in said second metal layer; depositing a third interlevel dielectric layer on said second metal layer; forming a circumferential recess in said third interlevel dielectric layer; depositing a third metal layer on said third interlevel dielectric layer; forming a circumferential recess in said third metal layer; and depositing a passivation layer.
Claim 3
Dependent Claim
10 words
The method of claim 1, wherein said substrate is silicon.
Claim 4
Dependent Claim
11 words
The method of claim 2, wherein said substrate contains semiconductor devices.
Claim 5
Dependent Claim
28 words
The method of claim 1, wherein said circumferential recess in said PolySi is formed at a distance between about 1.6 to 2.0 mm from edge of said substrate.
Claim 6
Dependent Claim
13 words
The method of claim 1, wherein said first interlevel dielectric layer is BPTEOS.
Claim 7
Dependent Claim
18 words
The method of claim 5, wherein said first BPTEOS has a thickness between about 9,000 to 10,000 Å.
Claim 8
Dependent Claim
30 words
The method of claim 1, wherein said circumferential recess in said first interlevel dielectric is formed at a distance between about 1.0 to 1.5 mm. from edge of said substrate.
Claim 9
Dependent Claim
12 words
The method of claim 1, wherein said first metal layer is aluminum-copper.
Claim 10
Dependent Claim
19 words
The method of claim 8, wherein said first metal layer has a thickness between about 5,000 to 5,600 Å.
Claim 11
Dependent Claim
30 words
The method of claim 1, wherein said circumferential recess in said first metal layer is formed at a distance between about 2.5 to 3.1 mm from edge of said substrate.
Claim 12
Dependent Claim
16 words
The method of claim 1, wherein said second interlevel dielectric layer is a sandwich dielectric structure.
Claim 13
Dependent Claim
19 words
The method of claim 11, wherein said sandwich dielectric structure has a thickness between about 8,000 to 10,000 Å.
Claim 14
Dependent Claim
30 words
The method of claim 1, wherein said circumferential recess in said second interlevel dielectric is formed at a distance between about 2.0 to 2.6 mm from edge of said substrate.
Claim 15
Dependent Claim
12 words
The method of claim 1, wherein said second metal layer is aluminum-copper.
Claim 16
Dependent Claim
19 words
The method of claim 14, wherein said second metal layer has a thickness between about 5,000 to 6,000 Å.
Claim 17
Dependent Claim
30 words
The method of claim 1, wherein said circumferential recess in said second metal layer is formed at a distance between about 1.5 to 2.0 mm from edge of said substrate.
Claim 18
Dependent Claim
13 words
The method of claim 1, wherein said third interlevel dielectric layer is SOG.
Claim 19
Dependent Claim
19 words
The method of claim 17, wherein said third SOG layer has a thickness between about 8,000 to 10,000 Å.
Claim 20
Dependent Claim
29 words
The method of claim 1, wherein said circumferential recess in said third interlevel dielectric is formed at a distance between about 3.0 to 3.5 from edge of said substrate.
Claim 21
Dependent Claim
12 words
The method of claim 1, wherein said third metal layer is aluminum-copper.
Claim 22
Dependent Claim
19 words
The method of claim 20, wherein said third metal layer has a thickness between about 8,000 to 8,200 Å.
Claim 23
Dependent Claim
30 words
The method of claim 1, wherein said circumferential recess in said third metal layer is formed at a distance between about 2.5 to 3.1 mm. from edge of said substrate.
Claim 24
Dependent Claim
13 words
The method of claim 1, wherein said passivation layer is a photosensitive polyimide.
Claim 25
Dependent Claim
16 words
The method of claim 23, wherein said polyimide layer has a thickness between about 3.0 micrometers.
References Cited (Backward Citations)
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