US5751056A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Reliable metal leads in high speed LSI semiconductors using dummy leads
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1998-05-12
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Expires: 2015-06-07
Abstract
Abstract A semiconductor device having metal leads 14 with improved reliability comprising metal leads 14 on a substrate 12, a low-dielectric constant material 18 at least between the metal leads 14, and dummy leads 16 proximate the metal leads 14. Heat from the metal leads 14 is transferable to the dummy leads 16, and the dummy leads 16 are capable of dissipating the heat. The low-dielectric constant material 18 has a dielectric constant of less than 3.5. An advantage of the invention is improved reliability of metal leads for circuits using low-dielectric constant materials.
Inventors
- 👤 Ken Numata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 23:28
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; Y; Y10; Y10S; Y10S438/00; Y10S438/926
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
78 words
A semiconductor device having metal leads with improved reliability, comprising: a substrate; at least two functional metal leads on said substrate; a low-dielectric constant insulating material at least between said functional metal leads; and dummy leads proximate said functional metal leads, wherein dummy leads are in such proximity to said functional metal leads as to dissipate Joule's heat from said functional metal leads, and wherein said low-dielectric constant insulating material has a dielectric constant of less than 3.5.
Claim 2
Dependent Claim
78 words
A semiconductor device having metal leads with improved reliability, comprising: a substrate; at least two functional metal leads on said substrate; a low-dielectric constant insulating material at least between said functional metal leads; and dummy leads proximate said functional metal leads, wherein dummy leads are in such proximity to said functional metal leads as to dissipate Joule's heat from said functional metal leads, and wherein said low-dielectric constant insulating material has a dielectric constant of less than 3.5.
Claim 3
Dependent Claim
19 words
The semiconductor device of claim 1 wherein the spacing between said functional metal leads is less than one μm.
Claim 4
Dependent Claim
44 words
The semiconductor device of claim 1 wherein; said dummy leads reside on said substrate proximate said functional metal leads; and the spacing between said functional metal leads and said dummy leads is between 1/2 and 11/2 the width of a said functional metal lead.
Claim 5
Dependent Claim
20 words
The semiconductor device of claim 1 further comprising a thin oxide layer over at least said low-dielectric constant insulating material.
Claim 6
Dependent Claim
50 words
The semiconductor device of claim 4 wherein: said thin oxide layer has a thickness of less than the width of a said functional metal lead; said low-dielectric constant insulating material has a low-dielectric constant of less than 2; and said functional metal leads have an aspect ratio greater than 2.
Claim 7
Dependent Claim
92 words
A semiconductor device having metal leads with improved reliability, comprising: a substrate; at least two functional metal leads on said substrate; a low-dielectric constant insulating material at least between said functional metal leads; and dummy leads on said substrate proximate said functional metal leads; wherein dummy leads are in such proximity to said functional metal leads as to dissipate Joule's heat from said functional metal leads, said low-dielectric constant insulating material has a dielectric constant of less than 3.5, and the spacing between said functional metal leads is less than one μm.
Claim 8
Dependent Claim
92 words
A semiconductor device having metal leads with improved reliability, comprising: a substrate; at least two functional metal leads on said substrate; a low-dielectric constant insulating material at least between said functional metal leads; and dummy leads on said substrate proximate said functional metal leads; wherein dummy leads are in such proximity to said functional metal leads as to dissipate Joule's heat from said functional metal leads, said low-dielectric constant insulating material has a dielectric constant of less than 3.5, and the spacing between said functional metal leads is less than one μm.
Claim 9
Dependent Claim
31 words
The semiconductor device of claim 6 wherein the spacing between said functional metal leads and said dummy leads is between 1/2 and 11/2 the width of a said functional metal lead.
Claim 10
Dependent Claim
20 words
The semiconductor device of claim 6 further comprising a thin oxide layer over at least said low-dielectric constant insulating material.
Claim 11
Dependent Claim
48 words
The semiconductor device of claim 8 wherein: said thin oxide layer has a thickness of less than the width of a said metal lead; said low-dielectric constant insulating material has a low-dielectric constant of less than 2; and said metal leads have an aspect ratio greater than 2.
Claim 12
Dependent Claim
17 words
The device of claim 6 wherein said functional metal leads have an aspect ratio greater than 2.
Claim 13
Dependent Claim
105 words
A semiconductor device having metal leads with improved reliability, comprising: a substrate; at least two functional metal leads on said substrate; a low-dielectric constant insulating material at least between said functional metal leads; a thin oxide layer over at least said low-dielectric constant insulating material; and dummy leads on said substrate proximate said functional metal leads; wherein said dummy leads are in such proximity to said functional metal leads as to dissipate Joule's heat from said functional metal leads, said low-dielectric constant insulating material has a dielectric constant of less than 3.5, and the spacing between said functional metal leads is less than one μm.
Claim 14
Dependent Claim
105 words
A semiconductor device having metal leads with improved reliability, comprising: a substrate; at least two functional metal leads on said substrate; a low-dielectric constant insulating material at least between said functional metal leads; a thin oxide layer over at least said low-dielectric constant insulating material; and dummy leads on said substrate proximate said functional metal leads; wherein said dummy leads are in such proximity to said functional metal leads as to dissipate Joule's heat from said functional metal leads, said low-dielectric constant insulating material has a dielectric constant of less than 3.5, and the spacing between said functional metal leads is less than one μm.
Claim 15
Dependent Claim
25 words
The semiconductor device of claim 11 wherein said thin oxide layer has a thickness of less than the width of a said functional metal lead.
Claim 16
Dependent Claim
17 words
The device of claim 11 wherein said functional metal leads have an aspect ratio greater than 2.
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| 3.5 Years (Year 4) | 2001-05-11 | 2001-11-10 | 2002-05-12 | $2000.00 | Window Closed / Lapsed |
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