Dynamic random access memory having an internal circuit using a boosted potential

Claim 2

A dynamic random access memory, comprising: a plurality of internal circuits; a plurality of boosted potential supply lines provided corresponding to said plurality of internal circuits each for supplying a boosted potential to a corresponding one of said internal circuits; and a plurality of boosted potential generating means provided corresponding to said plurality of internal circuits each for generating a boosted potential to be applied to a corresponding one of said boosted potential supply lines, wherein each boosted potential generating means generates said boosted potential such that a potential level of the corresponding one of said boosted potential supply lines attains a potential level required by the corresponding one of said plurality of internal circuits.

Claim 3

The dynamic random access memory according to claim 1, wherein at least two of said plurality of boosted potential generating means generate said boosted potentials at substantially equal levels.

Claim 4

The dynamic random access memory according to claim 2, wherein said each boosted potential generating means includes a charge pump circuit for generating said boosted potential, wherein the capabilities of each charge pump circuit for generating said boosted potentials at substantially equal levels are substantially equal.

Claim 5

The dynamic random access memory according to claim 1, wherein at least two of said plurality of boosted potential generating means generate said boosted potentials at different levels.

Claim 6

The dynamic random access memory according to claim 4, wherein said each boosted potential generating means includes detection means for detecting the potential level of the corresponding one of said boosted potential supply lines and maintaining said boosted potential to be applied to the corresponding one of said boosted potential supply lines at a level required by said corresponding one of said internal circuits based on a predetermined detection level, wherein between said at least two of said plurality of boosted potential generating means for generating said boosted potentials at different levels, said predetermined detection levels are different.

Claim 7

The dynamic random access memory according to claim 5, wherein said each boosted potential generating means further includes a charge pump circuit for generating said boosted potential, wherein the capabilities of each charge pump circuit for generating said boosted potentials at different levels are substantially equal.

Claim 8

The dynamic random access memory according to claim 5, wherein said each boosted potential generating means further includes at least one charge pump circuit for generating said boosted potential, wherein the capabilities of each charge pump circuit of said at least two of said plurality of boosted potential generating means generating said boosted potentials at different levels are different.

Claim 9

The dynamic random access memory according to claim 7, wherein said each charge pump circuit of said each boosted potential generating means generates said boosted potential by performing a boosting operation to a power supply potential, wherein between said charge pump circuits for generating said boosted potentials at different levels, the numbers of times of performing said boosting operation are different from each other.

Claim 10

The dynamic random access memory according to claim 4, wherein at least one of said plurality of boosted potential generating means includes power supply potential detection means for detecting a level of a power supply potential, and the capability of said at least one of said plurality of boosted potential generating means including said power supply potential detection means is switched in response to a detection result by said power supply potential detection means.

Claim 11

The dynamic random access memory according to claim 9, wherein said at least one of said plurality of boosted potential generating means including said power supply potential detection means further includes a plurality of charge pump circuits for generating said boosted potentials, the capabilities of each charge pump circuit is different, and a charge pump circuit with a small capability is activated as said power supply potential takes a higher level, while another charge pump circuit with a large capability is activated as said power supply potential takes a lower level.

Claim 12

The dynamic random access memory according to claim 9, wherein said at least one of said plurality of boosted potential generating means including said power supply potential detection means further includes a charge pump circuit for generating said boosted potential, said charge pump circuit generates said boosted potential by performing a boosting operation to said power supply potential, and a number of said boosting operation is decreased as said power supply potential takes a higher level, while the number of said boosting operation is increased as said power supply potential takes a lower level.

Claim 13

A random access memory having a plurality of operation modes, comprising: a first internal circuit; a first boosted potential supply line for supplying a first boosted potential to said first internal circuit; and first boosted potential generating means for generating said first boosted potential to be applied to said first boosted potential supply line, wherein said first boosted potential generating means generates said first boosted potential such that said first boosted potential supply line attains a potential level required by said first internal circuit, said first boosted potential generating means includes first power supply potential detection means for detecting a level of a power supply potential, and the capability of said first boosted potential generating means to generate said first boosted potential is switched in response to a detection result by said first power supply potential detection means independently of what operation mode said random access memory is in.

Claim 14

A random access memory having a plurality of operation modes, comprising: a first internal circuit; a first boosted potential supply line for supplying a first boosted potential to said first internal circuit; and first boosted potential generating means for generating said first boosted potential to be applied to said first boosted potential supply line, wherein said first boosted potential generating means generates said first boosted potential such that said first boosted potential supply line attains a potential level required by said first internal circuit, said first boosted potential generating means includes first power supply potential detection means for detecting a level of a power supply potential, and the capability of said first boosted potential generating means to generate said first boosted potential is switched in response to a detection result by said first power supply potential detection means independently of what operation mode said random access memory is in.

Claim 15

The random access memory according to claim 12, wherein said first boosted potential generating means further includes a plurality of charge pump circuits for generating said first boosted potentials, each charge pump circuits has a different potential generating capability, and a charge pump circuit with a small potential generating capability is activated as said power supply potential takes a higher level, while another charge pump circuit with a large potential generating capability is activated as said power supply potential takes a lower level.

Claim 16

The random access memory according to claim 12, wherein said first boosted potential generating means includes a charge pump circuit for generating said first boosted potential, said charge pump circuit generates said first boosted potential by performing a boosting operation to said power supply potential, and a number of said boosting operation is decreased as said power supply potential takes a higher level, while the number of said boosting operation is increased as said power supply potential takes a lower level.

Claim 17

The dynamic random access memory according to claim 12, further comprising: a second internal circuit; a second boosted potential supply line for supplying a second boosted potential to said second internal circuit; and second boosted potential generating means for generating said second boosted potential to be applied to said second boosted potential supply line, wherein said second boosted potential generating means generates said second boosted potential such that said second boosted potential supply line attains a potential level required by said second internal circuit.

Claim 18

The random access memory according to claim 12, further comprising: a plurality of second internal circuits; a plurality of second boosted potential supply lines provided corresponding to said plurality of second internal circuits each for supplying a second boosted potential to a corresponding one of said second internal circuits; and a plurality of second boosted potential generating means provided corresponding to said plurality of second internal circuits each for generating said second boosted potential to be applied to a corresponding one of said second boosted potential supply lines wherein each second boosted potential generating means generates said second boosted potential such that the corresponding one of said second boosted potential supply lines attains a potential level required by the corresponding one of said plurality of second internal circuits.

Claim 19

The random access memory according to claim 15, wherein said second boosted potential generating means includes second power supply potential detection means for detecting the level of the power supply potential, and the capability of said second boosted potential generating means including said second power supply potential detection means to generate said second boosted potential is switched in response to a detection result by said second power supply detection means.

Claim 20

The random access memory according to claim 16, wherein at least one of said plurality of second boosted potential generating means includes second power supply potential detection means for detecting the level of the power supply potential, and the capability of generating said second boosted potential of said at least one of said plurality of second boosted potential generating means including said second power supply potential detection means is switched in response to a detection result by said second power supply detection means.