US5786248A
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Semiconductor processing method of forming a tantalum oxide containing capacitor
Assignee: Micron Technology Inc
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Filing: 1995-10-12
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Granted: 1998-07-28
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Expires: 2015-10-12
Abstract
Abstract A semiconductor processing method of forming a capacitor on a substrate includes, a) providing an oxidizable and electrically conductive inner capacitor plate on the substrate; b) cleaning the inner capacitor plate to remove oxide therefrom; c) within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and chemical vapor depositing steps; d) providing a densified Ta 2 O 5 dielectric layer over the dielectric nitride layer; and e) providing an outer capacitor plate over the Ta 2 O 5 layer. Additionally, a method of forming a capacitor on a substrate includes, i) providing an oxidizable and electrically conductive inner capacitor plate on a substrate; ii) providing a densified Ta 2 O 5 dielectric layer over the inner capacitor plate; iii) within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the Ta 2 O 5 layer to a first thickness; and iv) providing an outer capacitor plate over the Ta 2 O 5 layer, the outer capacitor plate being provided outwardly of the dielectric nitride layer. The invention also includes capacitors produced according the method.
Inventors
- 👤 Klaus Schuegraf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 02:04
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
141 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; cleaning the inner capacitor plate to remove oxide therefrom; within a chemical vapor deposition reactor, first chemical vapor depositing a dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and chemical vapor depositing steps; separately second chemical vapor depositing a Ta 2 O 5 dielectric layer over the first chemical vapor deposited dielectric nitride layer; annealing the Ta 2 O 5 layer to densify such layer, the first chemical vapor deposited dielectric nitride layer restricting oxidation of the underlying oxidizable inner capacitor plate during the annealing; and providing an outer capacitor plate over the Ta 2 O 5 layer.
Claim 2
Dependent Claim
141 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; cleaning the inner capacitor plate to remove oxide therefrom; within a chemical vapor deposition reactor, first chemical vapor depositing a dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and chemical vapor depositing steps; separately second chemical vapor depositing a Ta 2 O 5 dielectric layer over the first chemical vapor deposited dielectric nitride layer; annealing the Ta 2 O 5 layer to densify such layer, the first chemical vapor deposited dielectric nitride layer restricting oxidation of the underlying oxidizable inner capacitor plate during the annealing; and providing an outer capacitor plate over the Ta 2 O 5 layer.
Claim 3
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 1 wherein the first thickness is less than about 30 Angstroms.
Claim 4
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 1 wherein the first thickness is less than about 20 Angstroms.
Claim 5
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 1 wherein the dielectric nitride comprises Si 3 N 4 .
Claim 6
Dependent Claim
22 words
The semiconductor processing method of forming a capacitor of claim 1 wherein the cleaning step comprises vapor cleaning the inner capacitor plate.
Claim 7
Dependent Claim
51 words
The semiconductor processing method of forming a capacitor of claim 1 wherein the cleaning step comprises vapor cleaning the inner capacitor plate, and the cleaning and chemical vapor depositing steps are conducted in the same reactor without removing the substrate from the reactor between the cleaning and chemical vapor depositing steps.
Claim 8
Dependent Claim
115 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; cleaning the inner capacitor plate to remove oxide therefrom; within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and chemical vapor depositing steps; after the chemical vapor depositing of the dielectric nitride layer, forming a densified Ta 2 O 5 dielectric layer over the chemical vapor deposited dielectric nitride layer; and providing an outer capacitor plate over the Ta 2 O 5 layer.
Claim 9
Dependent Claim
115 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; cleaning the inner capacitor plate to remove oxide therefrom; within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and chemical vapor depositing steps; after the chemical vapor depositing of the dielectric nitride layer, forming a densified Ta 2 O 5 dielectric layer over the chemical vapor deposited dielectric nitride layer; and providing an outer capacitor plate over the Ta 2 O 5 layer.
Claim 10
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 7 wherein the first thickness is less than about 30 Angstroms.
Claim 11
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 7 wherein the first thickness is less than about 20 Angstroms.
Claim 12
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 7 wherein the dielectric nitride comprises Si 3 N 4 .
Claim 13
Dependent Claim
22 words
The semiconductor processing method of forming a capacitor of claim 7 wherein the cleaning step comprises vapor cleaning the inner capacitor plate.
Claim 14
Dependent Claim
51 words
The semiconductor processing method of forming a capacitor of claim 7 wherein the cleaning step comprises vapor cleaning the inner capacitor plate, and the cleaning and chemical vapor depositing steps are conducted in the same reactor without removing the substrate from the reactor between the cleaning and chemical vapor depositing steps.
Claim 15
Dependent Claim
104 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; chemical vapor depositing a first dielectric nitride layer over the inner capacitor plate; providing a densified Ta 2 O 5 dielectric layer over the first dielectric nitride layer; within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the Ta 2 O 5 layer to a first thickness; and providing an outer capacitor plate over the Ta 2 O 5 layer, the outer capacitor plate being provided outwardly of the dielectric nitride layer.
Claim 16
Dependent Claim
104 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; chemical vapor depositing a first dielectric nitride layer over the inner capacitor plate; providing a densified Ta 2 O 5 dielectric layer over the first dielectric nitride layer; within a chemical vapor deposition reactor, chemical vapor depositing a dielectric nitride layer over the Ta 2 O 5 layer to a first thickness; and providing an outer capacitor plate over the Ta 2 O 5 layer, the outer capacitor plate being provided outwardly of the dielectric nitride layer.
Claim 17
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 13 wherein the first thickness is less than about 30 Angstroms.
Claim 18
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 13 wherein the first thickness is less than about 20 Angstroms.
Claim 19
Dependent Claim
21 words
The semiconductor processing method of forming a capacitor of claim 13 wherein the dielectric nitride comprises Si 3 N 4 .
Claim 20
Dependent Claim
146 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; cleaning the inner capacitor plate to remove oxide therefrom; within a chemical vapor deposition reactor, first chemical vapor depositing a first dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and first chemical vapor depositing steps; forming a separate densified Ta 2 O 5 dielectric layer over the first dielectric nitride layer; within a chemical vapor deposition reactor, second chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a second thickness; and providing an outer capacitor plate over the Ta 2 O 5 layer, the outer capacitor plate being provided outwardly of the second dielectric nitride layer.
Claim 21
Dependent Claim
146 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; cleaning the inner capacitor plate to remove oxide therefrom; within a chemical vapor deposition reactor, first chemical vapor depositing a first dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and first chemical vapor depositing steps; forming a separate densified Ta 2 O 5 dielectric layer over the first dielectric nitride layer; within a chemical vapor deposition reactor, second chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a second thickness; and providing an outer capacitor plate over the Ta 2 O 5 layer, the outer capacitor plate being provided outwardly of the second dielectric nitride layer.
Claim 22
Dependent Claim
23 words
The semiconductor processing method of forming a capacitor of claim 17 wherein the first and second thicknesses are less than about 30 Angstroms.
Claim 23
Dependent Claim
23 words
The semiconductor processing method of forming a capacitor of claim 17 wherein the first and second thicknesses are less than about 20 Angstroms.
Claim 24
Dependent Claim
25 words
The semiconductor processing method of forming a capacitor of claim 17 wherein the first and second dielectric nitride layers comprise Si 3 N 4 .
Claim 25
Dependent Claim
22 words
The semiconductor processing method of forming a capacitor of claim 17 wherein the cleaning step comprises vapor cleaning the inner capacitor plate.
Claim 26
Dependent Claim
53 words
The semiconductor processing method of forming a capacitor of claim 17 wherein the cleaning step comprises vapor cleaning the inner capacitor plate, and the cleaning and first chemical vapor depositing steps are conducted in the same reactor without removing the substrate from the reactor between the cleaning and first chemical vapor depositing steps.
Claim 27
Dependent Claim
173 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; cleaning the inner capacitor plate to remove oxide therefrom; within a chemical vapor deposition reactor, first chemical vapor depositing a first dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and first chemical vapor depositing steps; forming a separate Ta 2 O 5 dielectric layer over the first dielectric nitride layer; annealing the Ta 2 O 5 layer to densify such layer, the first dielectric nitride layer restricting oxidation of the underlying oxidizable inner capacitor plate during the annealing; within a chemical vapor deposition reactor, second chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a second thickness; and providing an outer capacitor plate over the Ta 2 O 5 layer, the outer capacitor plate being provided outwardly of the second dielectric nitride layer.
Claim 28
Dependent Claim
173 words
A semiconductor processing method of forming a capacitor on a substrate comprising the following steps: providing an oxidizable and electrically conductive inner capacitor plate on the substrate; cleaning the inner capacitor plate to remove oxide therefrom; within a chemical vapor deposition reactor, first chemical vapor depositing a first dielectric nitride layer over the cleaned inner capacitor plate to a first thickness, the substrate not being exposed to oxidizing conditions between the cleaning and first chemical vapor depositing steps; forming a separate Ta 2 O 5 dielectric layer over the first dielectric nitride layer; annealing the Ta 2 O 5 layer to densify such layer, the first dielectric nitride layer restricting oxidation of the underlying oxidizable inner capacitor plate during the annealing; within a chemical vapor deposition reactor, second chemical vapor depositing a second dielectric nitride layer over the Ta 2 O 5 layer to a second thickness; and providing an outer capacitor plate over the Ta 2 O 5 layer, the outer capacitor plate being provided outwardly of the second dielectric nitride layer.
Claim 29
Dependent Claim
23 words
The semiconductor processing method of forming a capacitor of claim 23 wherein the first and second thicknesses are less than about 30 Angstroms.
Claim 30
Dependent Claim
23 words
The semiconductor processing method of forming a capacitor of claim 23 wherein the first and second thicknesses are less than about 20 Angstroms.
Claim 31
Dependent Claim
25 words
The semiconductor processing method of forming a capacitor of claim 23 wherein the first and second dielectric nitride layers comprise Si 3 N 4 .
Claim 32
Dependent Claim
22 words
The semiconductor processing method of forming a capacitor of claim 23 wherein the cleaning step comprises vapor cleaning the inner capacitor plate.
Claim 33
Dependent Claim
53 words
The semiconductor processing method of forming a capacitor of claim 23 wherein the cleaning step comprises vapor cleaning the inner capacitor plate, and the cleaning and first chemical vapor depositing steps are conducted in the same reactor without removing the substrate from the reactor between the cleaning and first chemical vapor depositing steps.
References Cited (Backward Citations)
US4464701A
Cited
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