Plasma processing apparatus and plasma processing method

Claim 1

A plasma processing method comprising the steps of: preparing a plasma processing apparatus comprising a first electrode which is substantially flat and has a substrate mounting region mounted with a specified substrate to be treated, said substrate mounting region being made in an island region surrounded by a groove portion, an outside shape of said island region being smaller than that of said specified substrate, and said groove portion extending under an insulative cover, which is provided on said first electrode apart from and surrounding said substrate mounting region, and being filled with an insulator such that a surface of said insulator is equal to or lower than that of said substrate mounting region, a chamber for containing said first electrode, gas introducing means for introducing a reactive gas into said chamber, gas exhausting means for exhausting said gas from said chamber, a second electrode provided inside said chamber, power supply means for supplying high-frequency power between said first electrode and said second electrode and said insulative cover whose inner periphery surrounds said substrate, for covering a surface of said first electrode other than said substrate mounting region; mounting said specified substrate on said substrate mounting region of said first electrode in such a manner that said specified substrate completely covers said substrate mounting region; introducing said gas into said chamber; and supplying said high-frequency power between said first electrode and said second electrode.