US5851733A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photolithographic pattern generation
Assignee: Polaris Innovations Ltd
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Filing: 1995-09-01
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Granted: 1998-12-22
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Expires: 2015-09-01
Abstract
Abstract In a method for producing photolithographic patterns in the submicron range, applied on a substrate is a photoresist layer comprised of a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component--in the form of an ester of a naphthoquinonediazide-4-sulfonic acid with an aromatic or aliphatic-aromatic hydroxy compound--and a suitable solvent; the photoresist layer is then dried, exposed in an imaging manner, and subjected to a temperature treatment in the range of between 120° and 150° C. for a duration of 100 to 600 seconds. The photoresist layer is then subjected to a liquid silylation and is dry-developed in an anisotropic oxygen plasma.
Inventors
- 👤 Recai Sezi
- 👤 Rainer Leuschner
- 👤 Erwin Schmidt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:58
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/38; G03F7/265; G03F7/004; G03F7/022; G03F7/0226; G03F7/023; G03F7/0233; Y; Y10; Y10S; Y10S430/00; Y10S430/1053; Y10S430/1055; Y10S430/114; Y10S430/12
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
138 words
A method for producing photolithographic patterns in the submicron range, comprising the steps of: applying onto a substrate a photoresist layer comprising a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component in the form of an ester of a naphthoquinonediazide-4-sulfonic acid having a structure of ##STR2## with an aromatic or aliphatic-aromatic hydroxy compound, the residues R signifying--independently of one another--hydrogen, alkyl, halogenalkyl, alkoxy, phenyl, halogenphenyl, phenoxy or halogen, and a suitable solvent; drying the photoresist layer; exposing the photoresist layer in an imaging manner; subjecting the exposed photoresist layer to a temperature treatment in the range of between 120° and 150° C. for a duration of 100 to 600 seconds; subjecting the thus treated photoresist layer to liquid silylation; and dry-developing the silylated photoresist layer in an anisotropic oxygen plasma.
Claim 2
Independent Claim
138 words
A method for producing photolithographic patterns in the submicron range, comprising the steps of: applying onto a substrate a photoresist layer comprising a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component in the form of an ester of a naphthoquinonediazide-4-sulfonic acid having a structure of ##STR2## with an aromatic or aliphatic-aromatic hydroxy compound, the residues R signifying--independently of one another--hydrogen, alkyl, halogenalkyl, alkoxy, phenyl, halogenphenyl, phenoxy or halogen, and a suitable solvent; drying the photoresist layer; exposing the photoresist layer in an imaging manner; subjecting the exposed photoresist layer to a temperature treatment in the range of between 120° and 150° C. for a duration of 100 to 600 seconds; subjecting the thus treated photoresist layer to liquid silylation; and dry-developing the silylated photoresist layer in an anisotropic oxygen plasma.
Claim 3
Dependent Claim
16 words
The method as defined by claim 1, wherein the hydroxy compound is 2,3,4-trihydroxybenzophenone or bisphenol A.
Claim 4
Dependent Claim
23 words
The method as defined by claim 1, wherein the proportion of the photoresist in terms of the photoactive component is 20 to 40%.
Claim 5
Dependent Claim
17 words
The method as defined by claim 1, wherein an onium compound is added to the photoactive component.
Claim 6
Dependent Claim
19 words
The method as defined by claim 1, wherein the liquid silylation takes place with a polar, protic silylation solution.
Claim 7
Dependent Claim
26 words
The method as defined by claim 5, wherein as a silylation solution, a solution of an aminosiloxane in a mixture of water and alcohol is used.
Claim 8
Dependent Claim
22 words
The method as defined by claim 1, wherein a polymer is used, whose carboxylic acid anhydride groups are based on maleic anhydride.
Claim 9
Dependent Claim
20 words
The method as defined by claim 7, wherein a terpolymer of maleic anhydride, cinnamic acid tert.-butylester, and stilbene is used.
Claim 10
Dependent Claim
27 words
The method as defined by claim 1, wherein a polymer is used, whose tert.-butylester groups are based on acrylic acid, methacrylic acid, vinylbenzoic acid, or cinnamic acid-tert.-butylester.
Claim 11
Dependent Claim
21 words
The method as defined by claim 1, wherein a polymer is used, whose tert.-butoxycarbonyloxy groups are based on tert.-butoxycarbonyloxystyrene or -maleinimide.
References Cited (Backward Citations)
US5124228A
Cited
US5114816A
Cited
US5384220A
Cited
US5506088A
Cited
US5294521A
Cited
US5395728A
Cited
US5314782A
Cited
US5556734A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-12-21 | 2002-06-22 | 2002-12-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-12-21 | 2006-06-22 | 2006-12-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-12-21 | 2010-06-22 | 2010-12-22 | $7700.00 | Window Closed / Lapsed |