Patent US5855685A successfully refreshed from Google Patents.
US5855685A
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US
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Plasma enhanced CVD apparatus, plasma enhanced processing apparatus and plasma enhanced CVD method
Assignee: Canon Anelva Corp
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Filing: 1996-10-03
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Granted: 1999-01-05
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Expires: 2016-10-03
Abstract
Abstract By forming at least one annular groove in each of electrical insulation members provided between a plasma generating electrode and a processing chamber, the insulation performance of the electrical insulation members are prevented from degradation during deposition of conductive films onto a substrate. The plasma generating electrode is substantially a coil of one turn and provided with a pair of introduction portions passing through a wall of the processing chamber. An insulation ring made of quartz glass is installed between each of the introduction portion and the processing chamber. The insulation ring has a round through hole in the center of a disc and three concentric protrusions, each of which is in the shape of an annulus ring, are formed at one side of the disc (the side exposed in the processing chamber). Two annular grooves are made between the protrusions. Each of the protrusions are 50 mm high, 1 mm thick, and 1 mm wide.
Inventors
- 👤 Ryoki Tobe
- 👤 Atsushi Sekiguchi
- 👤 Masao Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 07:36
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C14/00; C23C14/22; C23C14/34
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
138 words
A plasma enhanced CVD apparatus, comprising: a processing chamber; an evacuation mechanism for evacuating said processing chamber; a gas introduction mechanism for introducing a source gas into the processing chamber; a plasma generating electrode provided in said processing chamber, wherein a film is deposited onto a substrate in said processing chamber by generating plasma using power supplied to said plasma generating electrode; cylindrical introduction portions passing through a wall of said processing chamber; and electrical insulation members, each of which are arranged between a respective one of said introduction portions and said processing chamber; wherein each of said electrical insulation members comprises a round through-hole through which said respective introduction portion passes and at least one annular groove formed on a surface of the introduction member that is exposed in the processing chamber and arranged surrounding said through-hole.
Claim 2
Dependent Claim
138 words
A plasma enhanced CVD apparatus, comprising: a processing chamber; an evacuation mechanism for evacuating said processing chamber; a gas introduction mechanism for introducing a source gas into the processing chamber; a plasma generating electrode provided in said processing chamber, wherein a film is deposited onto a substrate in said processing chamber by generating plasma using power supplied to said plasma generating electrode; cylindrical introduction portions passing through a wall of said processing chamber; and electrical insulation members, each of which are arranged between a respective one of said introduction portions and said processing chamber; wherein each of said electrical insulation members comprises a round through-hole through which said respective introduction portion passes and at least one annular groove formed on a surface of the introduction member that is exposed in the processing chamber and arranged surrounding said through-hole.
Claim 3
Dependent Claim
45 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein an opening of said groove is located on a plane perpendicular to an axis of said through-hole and a depth direction of said annular groove is parallel to the axis of said through-hole.
Claim 4
Dependent Claim
45 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein an opening of said annular groove is located on a cylindrical face concentric with said through-hole and a depth direction of said annular groove is perpendicular to an axis of said through hole.
Claim 5
Dependent Claim
23 words
A plasma enhanced CVD apparatus as set forth in claim 2, wherein each of said insulation members includes a plurality of annular grooves.
Claim 6
Dependent Claim
62 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein each of said insulation members includes a plurality of annular grooves, and some openings of said annular grooves are located on a plane perpendicular to an axis of said through-hole and a remainder of the openings of said annular grooves are located on a cylindrical face concentric with said through-hole.
Claim 7
Dependent Claim
30 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein a surface of each of said electrical insulation members that is exposed in said processing chamber is rough.
Claim 8
Dependent Claim
27 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein a width of said groove is in a range of 0.01 mm to 3 mm.
Claim 9
Dependent Claim
27 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein a width of said groove is in a range of 0.3 mm to 2 mm.
Claim 10
Dependent Claim
30 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein a ratio of depth to width of said annular groove is in a range of 2 to 1,000.
Claim 11
Dependent Claim
30 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein a ratio of depth to width of said annular groove is in a range of 5 to 100.
Claim 12
Dependent Claim
22 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein said plasma generating electrode is a coil comprising substantially one-turn.
Claim 13
Dependent Claim
24 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein said plasma generating electrode is a coil comprising more than one turn.
Claim 14
Dependent Claim
47 words
A plasma enhanced CVD apparatus as set forth in claim 1, wherein the introduction portions form part of said plasma generating electrode, one of said introduction portions is connected to a radio-frequency power supply and another of the introduction portions is grounded via a ground connecting mechanism.
Claim 15
Dependent Claim
50 words
A plasma enhanced CVD apparatus as set forth in claim 13, wherein said ground connecting mechanism comprises at least one of a capacitor connecting said plasma generating electrode to ground, a metal plate connecting said plasma generating electrode to ground, and a coil connecting said plasma generating electrode to ground.
Claim 16
Dependent Claim
60 words
A plasma enhanced CVD apparatus as set forth in claim 13, wherein said ground connecting mechanism comprises at least two of a capacitor capable of connecting said plasma generating electrode to ground, a metal plate capable of connecting said plasma generating electrode to ground, and a coil capable of connecting said plasma generating electrode to ground, which are selectively switched.
Claim 17
Dependent Claim
138 words
A plasma processing CVD apparatus, comprising: a processing chamber; an evacuation mechanism for vacuuming said processing chamber; a gas introduction mechanism for introducing a source gas into the processing chamber; a plasma generating electrode provided in said processing chamber, wherein a film is deposited onto a substrate in said processing chamber by generating plasma using power supplied to said plasma generating electrode; cylindrical introduction portions passing through a wall of said processing chamber; and electrical insulation members, each of which are arranged between a respective one of said introduction portions and said processing chamber; wherein each of said electrical insulation members comprises a round through-hole through which said corresponding introduction portion passes and at least one annular groove formed on a surface of the introduction member that is exposed to the processing chamber and arranged surrounding said through-hole.
Claim 18
Dependent Claim
138 words
A plasma processing CVD apparatus, comprising: a processing chamber; an evacuation mechanism for vacuuming said processing chamber; a gas introduction mechanism for introducing a source gas into the processing chamber; a plasma generating electrode provided in said processing chamber, wherein a film is deposited onto a substrate in said processing chamber by generating plasma using power supplied to said plasma generating electrode; cylindrical introduction portions passing through a wall of said processing chamber; and electrical insulation members, each of which are arranged between a respective one of said introduction portions and said processing chamber; wherein each of said electrical insulation members comprises a round through-hole through which said corresponding introduction portion passes and at least one annular groove formed on a surface of the introduction member that is exposed to the processing chamber and arranged surrounding said through-hole.
Claim 19
Dependent Claim
104 words
An insulator for a CVD apparatus, comprising: a body formed of an insulating material, said body including a face for securing the insulator to a wall of a processing chamber of said CVD apparatus; a through-hole extending through a center of said body so that the through-hole extends through the wall of the processing chamber when the body is secured to the wall; and a pair of parallel plates arranged concentrically around said through-hole so as to create a groove between said parallel plates, said groove being exposed to an interior portion of the processing chamber when the body is secured to the wall.
Claim 20
Dependent Claim
104 words
An insulator for a CVD apparatus, comprising: a body formed of an insulating material, said body including a face for securing the insulator to a wall of a processing chamber of said CVD apparatus; a through-hole extending through a center of said body so that the through-hole extends through the wall of the processing chamber when the body is secured to the wall; and a pair of parallel plates arranged concentrically around said through-hole so as to create a groove between said parallel plates, said groove being exposed to an interior portion of the processing chamber when the body is secured to the wall.
Claim 21
Dependent Claim
26 words
The insulator of claim 17, wherein the through-hole extends substantially perpendicular to the wall of the processing chamber when the body is secured to the wall.
Claim 22
Dependent Claim
17 words
The insulator of claim 17, wherein the parallel plates extend in a direction parallel to the through-hole.
Claim 23
Dependent Claim
17 words
The insulator of claim 17, wherein the parallel plates extend in a direction perpendicular to the through-hole.
Claim 24
Dependent Claim
32 words
The insulator of claim 17, wherein the parallel plates extend in a direction parallel to the through-hole, and further comprising a second pair of parallel plates that extend perpendicular to the through-hole.
Claim 25
Dependent Claim
16 words
The insulator of claim 17, further comprising a third plate parallel to the pair of plates.
Claim 26
Dependent Claim
117 words
A plasma enhanced CVD method, comprising steps of: introducing a source gas into a processing chamber; generating plasma by supplying electric power to a plasma generating electrode provided in said processing chamber; and depositing a conductive film onto a substrate in said processing chamber; wherein said plasma generating electrode comprises cylindrical introduction portions passing through a wall of said processing chamber; electrical insulation members are arranged between a respective one of said introduction portions and said processing chamber; and each of said electrical insulation members comprises a round through-hole through which said respective introduction portion passes and at least one annular groove formed on a surface exposed in said processing chamber and arranged surrounding said through hole.
Claim 27
Dependent Claim
117 words
A plasma enhanced CVD method, comprising steps of: introducing a source gas into a processing chamber; generating plasma by supplying electric power to a plasma generating electrode provided in said processing chamber; and depositing a conductive film onto a substrate in said processing chamber; wherein said plasma generating electrode comprises cylindrical introduction portions passing through a wall of said processing chamber; electrical insulation members are arranged between a respective one of said introduction portions and said processing chamber; and each of said electrical insulation members comprises a round through-hole through which said respective introduction portion passes and at least one annular groove formed on a surface exposed in said processing chamber and arranged surrounding said through hole.
Claim 28
Dependent Claim
34 words
A plasma enhanced CVD method as set forth in claim 23, wherein a titanium nitride film is deposited onto the substrate by using titanium tetrachloride, gaseous nitrogen and gaseous hydrogen as said source gases.
Claim 29
Dependent Claim
31 words
A plasma enhanced CVD method as set forth in claim 23, wherein a titanium film is deposited onto the substrate by using titanium tetrachloride and gaseous hydrogen as said source gases.
Claim 30
Dependent Claim
39 words
A plasma enhanced CVD method as set forth in claim 23, wherein a titanium silicide film is deposited onto the substrate by using titanium tetrachloride and gaseous hydrogen as said source gases and by using silicon as said substrate.
Claim 31
Dependent Claim
23 words
A plasma enhanced CVD method as set forth in claim 24, wherein titanium is used as a material for said plasma generating electrode.
References Cited (Backward Citations)
JPH0558072A
Cited
JPH0635663A
Cited
JPH06275600A
Cited
JPH0718433A
Cited
JPH0740468A
Cited
JPH07254500A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-01-04 | 2002-07-06 | 2003-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-01-04 | 2006-07-06 | 2007-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-01-04 | 2010-07-06 | 2011-01-05 | $7700.00 | Window Closed / Lapsed |