US5880486A
Expired / Lapsed
US
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Light-emitting gallium nitride-based compound semiconductor device
Assignee: Nichia Corp
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Filing: 1996-08-30
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Granted: 1999-03-09
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Expires: 2016-08-30
Abstract
Abstract A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity In x Ga 1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.
Inventors
- 👤 Shuji Nakamura
- 👤 Takashi Mukai
- 👤 Naruhito Iwasa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:34
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/811; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32341; H10H20/8215; H10H20/8252
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
107 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a p-type light-emitting layer having first and second surfaces, and comprising a III-V Group gallium nitride-based compound semiconductor containing gallium, indium and nitrogen, doped with a p-type impurity; a first clad layer provided on the side of said first surface of said light-emitting layer, and comprising an n-type gallium nitride-based compound semiconductor; a second clad layer provided on the side of said second surface of said light-emitting layer, and comprising a p-type gallium nitride-based compound semiconductor; and a p-type contact layer comprising gallium nitride doped with a p-type impurity, and provided on said second clad layer.
Claim 2
Dependent Claim
107 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a p-type light-emitting layer having first and second surfaces, and comprising a III-V Group gallium nitride-based compound semiconductor containing gallium, indium and nitrogen, doped with a p-type impurity; a first clad layer provided on the side of said first surface of said light-emitting layer, and comprising an n-type gallium nitride-based compound semiconductor; a second clad layer provided on the side of said second surface of said light-emitting layer, and comprising a p-type gallium nitride-based compound semiconductor; and a p-type contact layer comprising gallium nitride doped with a p-type impurity, and provided on said second clad layer.
Claim 3
Dependent Claim
110 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a p-type light-emitting layer having first and second surfaces, and comprising a III-V Group gallium nitride-based compound semiconductor containing gallium, indium and nitrogen, doped with a p-type impurity; a first clad layer provided on the side of said first surface of said light-emitting layer, and comprising an n-type gallium nitride-based compound semiconductor; a second clad layer provided on the side of said second surface of said light-emitting layer, and comprising an p-type gallium nitride-based compound semiconductor; and an n-type contact layer comprising gallium nitride doped with an n-type impurity, and provided in electrical contact with said first clad layer.
Claim 4
Dependent Claim
110 words
A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising: a p-type light-emitting layer having first and second surfaces, and comprising a III-V Group gallium nitride-based compound semiconductor containing gallium, indium and nitrogen, doped with a p-type impurity; a first clad layer provided on the side of said first surface of said light-emitting layer, and comprising an n-type gallium nitride-based compound semiconductor; a second clad layer provided on the side of said second surface of said light-emitting layer, and comprising an p-type gallium nitride-based compound semiconductor; and an n-type contact layer comprising gallium nitride doped with an n-type impurity, and provided in electrical contact with said first clad layer.
Claim 5
Dependent Claim
24 words
The device according to claim 1 wherein said light-emitting layer comprises a compound semiconductor having a formula: In x Ga 1-x N, where 0≦x≦1.
Claim 6
Dependent Claim
18 words
The device according to claim 3, wherein said x is larger than 0 (zero), but smaller than 0.5.
Claim 7
Dependent Claim
14 words
The device according to claim 1, wherein said contact layer is doped with magnesium.
Claim 8
Dependent Claim
25 words
The device according to claim 1, wherein said first clad layer comprises a semiconductor represented by the formula, Ga y Al 1-y N, where 0≦y≦1.
Claim 9
Dependent Claim
25 words
The device according to claim 1, wherein said second clad layer comprises a semiconductor represented by the formula, Ga z Al 1-z N, where 0≦z≦1.
Claim 10
Dependent Claim
18 words
The device according to claim 7, wherein said second clad layer comprises aluminum, and is doped with magnesium.
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