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US5883219A Expired / Lapsed US ⏱️ 0.0 years remaining

Integrated circuit device and process for its manufacture

Assignee: International Business Machines Corp
•
Filing: 1997-05-29
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Granted: 1999-03-16
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Expires: 2017-05-29
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Abstract

Abstract The invention relates to an integrated circuit device comprising (i) a substrate, (ii) metallic circuit lines positioned on the substrate, and (iii) a porous dielectric material positioned on the circuit lines. The dielectric material comprises the reaction product of an organic polysilica and polyamic ester preferably terminated with an alkoxysilyl alkyl group.

Inventors

  • 👤 Kenneth Raymond Carter
  • 👤 Daniel Joseph Dawson
  • 👤 Richard Anthony DiPietro
  • 👤 Craig Jon Hawker
  • 👤 James Lupton Hedrick
  • 👤 Robert Dennis Miller
  • 👤 Do Yeung Yoon

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 22:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; C; C08; C08G; C08G73/00; C08G73/06; C08G73/10; C08L; C08L83/00; C08L83/02; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10W20/01; H10W20/071; H10P14/63; H10P14/6326; H10P14/6342; H10P14/665; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922

Claims Analysis

Total Claims: 31
Claim 1
Independent Claim 70 words
An integrated circuit device comprising: (a) a substrate; (b) metallic circuit lines positioned on the substrate; and (c) a porous dielectric composition positioned contiguous to the circuit lines, the composition comprising the reaction product of organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3.
Claim 2
Dependent Claim 70 words
An integrated circuit device comprising: (a) a substrate; (b) metallic circuit lines positioned on the substrate; and (c) a porous dielectric composition positioned contiguous to the circuit lines, the composition comprising the reaction product of organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3.
Claim 3
Dependent Claim 17 words
The device of claim 1 wherein the organic polysilica is C 1-6 alkoxysilane, silsesquioxane, or mixtures thereof.
Claim 4
Dependent Claim 13 words
The device of claim 2 wherein the silsesquioxane is phenyl/C 1-6 alkyl silsesquioxane.
Claim 5
Dependent Claim 28 words
The device of claim 2 wherein the polyamic ester is terminated with a tri C 1-10 alkoxysilyl C 1-10 alkyl group or tri C 1-10 alkoxysilyl aryl group.
Claim 6
Dependent Claim 42 words
The device of claim 3 wherein the polyamic ester comprises a diamine selected from 9,9'-bis(4-aminophenyl)fluorene; 4,4'-oxydianiline and 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane and a diester diacid halide selected from di C 1-6 alkyl dichloro pyromellitate, di C 1-6 alkyl dichloroxydiphthalate, and di C 1-6 alkyl dichlorobiphenyl-tetracarboxylate.
Claim 7
Dependent Claim 17 words
The device of claim 2 wherein the dielectric composition has a dielectric constant of less than 3.2.
Claim 8
Dependent Claim 16 words
The device of claim 2 wherein the dielectric composition has phase domains less than 0.5 micron.
Claim 9
Dependent Claim 100 words
A process for forming an integrated circuit comprising: (a) positioning on a substrate a layer of dielectric composition, the composition comprising a decomposable polymer and reactants organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; (b) heating the composition to react the reactants; (c) decomposing the decomposable polymer; (d) lithographically patterning the dielectric layer; (e) depositing a metallic film onto the patterned dielectric layer; and (f) planarizing the film to form the integrated circuit.
Claim 10
Dependent Claim 100 words
A process for forming an integrated circuit comprising: (a) positioning on a substrate a layer of dielectric composition, the composition comprising a decomposable polymer and reactants organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; (b) heating the composition to react the reactants; (c) decomposing the decomposable polymer; (d) lithographically patterning the dielectric layer; (e) depositing a metallic film onto the patterned dielectric layer; and (f) planarizing the film to form the integrated circuit.
Claim 11
Dependent Claim 17 words
The process of claim 8 wherein the organic polysilica is C 1-6 alkoxysilane, silsesquioxane, or mixtures thereof.
Claim 12
Dependent Claim 28 words
The process of claim 9 wherein the polyamic ester is terminated with tri C 1-10 alkoxysilyl C 1-10 alkyl group or a tri C 1-10 alkoxysilyl aryl group.
Claim 13
Dependent Claim 42 words
The process of claim 9 wherein the polyamic ester comprises a diamine selected from 9,9'-bis(4-aminophenyl)fluorene; 4,4'-oxydianiline and 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane and a diester diacid halide selected from di C 1-6 alkyl dichloro pyromellitate; di C 1-6 alkyl dichloroxydiphthalate and di C 1-6 alkyl dichlorobiphenyl-tetracarboxylate.
Claim 14
Dependent Claim 17 words
The process of claim 8 wherein the composition is heated in the presence of an organic base.
Claim 15
Dependent Claim 90 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film a layer of a dielectric composition comprising a decomposable polymer and reactants organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; (d) heating the composition to react the reactants; and (e) decomposing the decomposable polymer.
Claim 16
Dependent Claim 90 words
A process for forming an integrated circuit comprising: (a) depositing a metallic film on a substrate; (b) lithographically patterning the metallic film; (c) depositing on the patterned metallic film a layer of a dielectric composition comprising a decomposable polymer and reactants organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; (d) heating the composition to react the reactants; and (e) decomposing the decomposable polymer.
Claim 17
Dependent Claim 17 words
The process of claim 13 wherein the organic polysilica is C 1-6 alkoxysilane, silsesquioxane, or mixtures thereof.
Claim 18
Dependent Claim 30 words
The process of claim 14 wherein the polyamic ester is end capped with a tri C 1-10 alkoxysilyl C 1-10 alkyl group or a tri C 1-10 alkoxysilyl aryl group.
Claim 19
Dependent Claim 43 words
The process of claim 14 wherein the polyamic ester comprises a diamine selected from 9,9'-bis(4-aminophenyl)fluorene; 4,4'-oxydianiline and 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane and a diester diacid halide selected from di C 1-6 alkyl dichloro pyromellitate; di C 1-6 alkyl dichlorooxydliphthalate and di C 1-6 alkyl dichlorobiphenyl-tetra carboxylate.
Claim 20
Dependent Claim 17 words
The process of claim 13 wherein the composition is heated in the presence of an organic base.
Claim 21
Dependent Claim 43 words
A porous composition comprising the reaction product of organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3.
Claim 22
Dependent Claim 43 words
A porous composition comprising the reaction product of organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3.
Claim 23
Dependent Claim 17 words
The composition of claim 18 wherein the organic polysilica is C 1-6 alkoxysilane, silsesquioxane, or mixtures thereof.
Claim 24
Dependent Claim 30 words
The composition of claim 19 wherein the polyamic ester is end capped with a tri C 1-10 alkoxysilyl C 1-10 alkyl group or a tri C 1-10 alkoxysilyl aryl group.
Claim 25
Dependent Claim 43 words
The composition of claim 20 wherein the polyamic ester comprises a diamine selected from 9,9'-bis(4-aminophenyl)fluorene; 4,4'-oxydianiline and 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane and a diester diacid halide selected from di C 1-6 alkyl dichloro pyromellitate; di C 1-6 alkyl dichlorooxydiphthalate and di C 1-6 alkyl dichorobiphenyl-tetra carboxylate.
Claim 26
Dependent Claim 110 words
An integrated circuit packaging device for providing signal and power current to an integrated circuit chip comprising: (i) a substrate having an electrical conductor for connection to a circuit board; (ii) a plurality of alternating electrically insulating and conducting layers positioned on the substrate wherein at least one of the layers comprises the porous reaction product of organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; and (iii) a plurality of vias for electrically interconnecting electrical conductor, conducting layers, and an integrated circuit chip.
Claim 27
Dependent Claim 110 words
An integrated circuit packaging device for providing signal and power current to an integrated circuit chip comprising: (i) a substrate having an electrical conductor for connection to a circuit board; (ii) a plurality of alternating electrically insulating and conducting layers positioned on the substrate wherein at least one of the layers comprises the porous reaction product of organic polysilica and polyamic ester terminated with (RO) m (R") n SiR'-- where R and R' are independently a hydrocarbyl group; R" is hydrido or hydrocarbyl group; m is 1, 2 or 3 and n+m=3; and (iii) a plurality of vias for electrically interconnecting electrical conductor, conducting layers, and an integrated circuit chip.
Claim 28
Dependent Claim 17 words
The device of claim 22 wherein the organic polysilica is C 1-6 alkoxysilane, silsesquioxane, or mixtures thereof.
Claim 29
Dependent Claim 13 words
The device of claim 23 wherein the silsesquioxane is phenyl/C 1-6 alkyl silsesquioxane.
Claim 30
Dependent Claim 28 words
The device of claim 23 wherein the polyamic ester is terminated with a tri C 1-10 alkoxysilyl C 1-10 alkyl group or tri C 1-10 alkoxysilyl aryl group.
Claim 31
Dependent Claim 42 words
The device of claim 25 wherein the polyamic ester comprises a diamine selected from 9,9'-bis(4-aminophenyl)fluorene, 4,4'-oxydianiline and 1,1-bis(4-aminophenyl)-1-phenyl-2,2,2-trifluoroethane, and a diester diacid halide selected from di C 1-6 alkyl dichloro pyromellitate, di C 1-6 alkyl dichlorooxydiphthalate and di C 1-6 alkyl dichlorobiphenyl-tetracarboxylate.

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3.5 Years (Year 4) 2002-03-15 2002-09-14 2003-03-16 $2000.00 Window Closed / Lapsed
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