US5886905A
Expired / Lapsed
US
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Method of determining operating conditions for a nonvolatile semiconductor memory
Assignee: NEC Electronics Corp
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Filing: 1996-12-02
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Granted: 1999-03-23
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Expires: 2016-12-02
Abstract
Abstract On determining operating conditions for a nonvolatile semiconductor memory including a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor), measurement is made, before completion of manufacture of the nonvolatile semiconductor memory and after completion of manufacture of the MOSFET, of characteristics of the MOSFET to obtain parameters which are used in simulating an operation of the nonvolatile semiconductor memory. By using the parameters, simulation of the operation of the nonvolatile semiconductor memory is executed to obtain a simulation result which is preferably a result relating to deterioration of operation characteristics of the nonvolatile semiconductor memory. The operating conditions for the nonvolatile semiconductor memory are obtained from the simulation result. The nonvolatile semiconductor memory may be an EEPROM (Electrically Erasable Programmable Read-Only Memory).
Inventors
- 👤 Ayumi Yokozawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:35
CPC Classifications
G; G11; G11C; G11C16/00; G11C29/00; G11C29/04; G11C29/50; G11C29/50008; G06; G06F; G06F11/00; G06F11/006; G11C16/02; G11C16/04; G11C2029/5004; G11C2029/5006
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
91 words
A method of determining operating conditions for a nonvolatile semiconductor memory, comprising: partially manufacturing said memory, said partially manufactured memory including a MOSFET; simulating operation of said partially manufactured memory based on at least one parameter of said MOSFET; determining a life of said partially manufactured memory based on a result of said simulating step; and determining at least one operating condition for said partially manufactured memory that will cause said partially manufactured memory, once manufactured, to operate for a duration which includes the life determined in said life determining step.
Claim 2
Independent Claim
91 words
A method of determining operating conditions for a nonvolatile semiconductor memory, comprising: partially manufacturing said memory, said partially manufactured memory including a MOSFET; simulating operation of said partially manufactured memory based on at least one parameter of said MOSFET; determining a life of said partially manufactured memory based on a result of said simulating step; and determining at least one operating condition for said partially manufactured memory that will cause said partially manufactured memory, once manufactured, to operate for a duration which includes the life determined in said life determining step.
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, wherein said nonvolatile semiconductor memory is an EEPROM (Electrically Erasable Programmable Read-Only Memory).
Claim 4
Dependent Claim
32 words
A method as claimed in claim 1, wherein said simulating step includes simulating the operation of said nonvolatile semiconductor memory after completion of manufacture of said MOSFET to obtain said simulation result.
Claim 5
Dependent Claim
20 words
A method as claimed in claim 3, wherein said nonvolatile semiconductor memory is an EEPROM (Electrically Erasable Programmable Read-Only Memory).
Claim 6
Dependent Claim
76 words
A method as claimed in claim 3, wherein said simulating step comprises: a step of obtaining, from measurement of characteristics of said MOSFET, parameters used in simulating the operation of said nonvolatile semiconductor memory before completion of manufacture of said nonvolatile semiconductor memory and after completion of manufacture of said MOSFET; and a simulation executing step of executing simulation of the operation of said nonvolatile semiconductor memory by using said parameters to obtain said simulation result.
Claim 7
Dependent Claim
20 words
A method as claimed in claim 5, wherein said nonvolatile semiconductor memory is an EEPROM (Electrically Erasable Programmable Read-Only Memory).
Claim 8
Dependent Claim
76 words
A method as claimed in claim 5, wherein: said simulation executing step includes executing said simulation of the operation of said nonvolatile semiconductor memory by using said parameters to obtain, as said simulation result, a result relating to deterioration of operation characteristics of said nonvolatile semiconductor memory; said second step includes obtaining the operating conditions for said nonvolatile semiconductor memory from said result relating to the deterioration of the operation characteristics of said nonvolatile semiconductor memory.
Claim 9
Dependent Claim
20 words
A method as claimed in claim 7, wherein said nonvolatile semiconductor memory is an EEPROM (Electrically Erasable Programmable Read-Only Memory).
Claim 10
Independent Claim
86 words
A method for determining operating conditions for a non-volatile semiconductor memory, comprising: partially manufacturing said memory, said partially manufactured memory including a MOSFET; simulating operation of said partially manufactured memory based on at least one parameter of said MOSFET; determining a life of said memory based on a result of said simulating step; and determining at least one operating condition for said partially manufactured memory that will cause said memory, once manufactured, to operate for a duration which includes the life determined in said determining step.
Claim 11
Independent Claim
86 words
A method for determining operating conditions for a non-volatile semiconductor memory, comprising: partially manufacturing said memory, said partially manufactured memory including a MOSFET; simulating operation of said partially manufactured memory based on at least one parameter of said MOSFET; determining a life of said memory based on a result of said simulating step; and determining at least one operating condition for said partially manufactured memory that will cause said memory, once manufactured, to operate for a duration which includes the life determined in said determining step.
Claim 12
Dependent Claim
70 words
A method as claimed in claim 9, wherein said at least one parameter includes one of a group consisting of (1) a gate voltage versus time characteristic on constant-current stress condition, (2) a gate current versus time characteristic on constant-voltage stress condition, (3) capacitance versus gate voltage characteristic, (4) gate current versus gate voltage characteristic, (5) drain current versus drain voltage characteristic, and (6) drain current versus gate voltage characteristic.
Claim 13
Dependent Claim
49 words
A method as claimed in claim 9, further comprising: evaluating operation of said memory based on at least one analysis criterion; and predicting as the life of said memory a duration over which said memory, as simulated, exhibits operation above a predetermined degraded condition relative to said analysis criterion.
Claim 14
Dependent Claim
28 words
A method as claimed in claim 11, wherein said at least one analysis criterion includes at least one of endurance cycle characteristics and retention characteristics of said memory.
Claim 15
Dependent Claim
83 words
A method as claimed in claim 12, wherein when said analysis criterion is endurance cycle characteristics, said life is a duration which corresponds to a time when a difference between a threshold voltage for a programing operation and threshold voltage for an erasing operation falls below a predetermined difference, and wherein when said analysis criterion is retention characteristics, said life is a duration which corresponds to a time when variation of a threshold voltage in a programming condition falls below a predetermined value.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-03-22 | 2002-09-21 | 2003-03-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-03-22 | 2006-09-21 | 2007-03-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-03-22 | 2010-09-21 | 2011-03-23 | $7700.00 | Window Closed / Lapsed |