Plasma processing apparatus

Claim 2

A plasma processing apparatus for processing a target substrate, using a plasma, comprising: an airtight process chamber; exhaust means for exhausting and setting said process chamber into a vacuum state; process gas supply means for supplying a process gas into said process chamber; an electric-field generator for generating an RF electric field in said process chamber to convert said process gas into plasma; a worktable arranged in said process chamber and having a mount surface for supporting said target substrate; an electrostatic chuck fixed to said mount surface, for attracting and holding said target object, said electrostatic chuck comprising at least three chuck segments arranged with a gap interposed therebetween so as to separate said at least three chuck segments from each other, and to prevent said electrostatic chuck from being distorted due to thermal stress, each chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween; and a DC power supply section for supplying said conductive layer of each chuck segment with a DC electric potential.

Claim 3

The apparatus according to claim 1, wherein said DC power supply section is arranged to substantially simultaneously supply the conductive layers of said at least three chuck segments with DC electric potentials substantially the same as each other.

Claim 4

The apparatus according to claim 1, wherein said at least three chuck segments are arranged in an angular direction relative to a center of said mount surface.

Claim 5

The apparatus according to claim 1, wherein said at least three chuck segments have substantially the same shape.

Claim 6

The apparatus according to claim 1, wherein said electrostatic chuck comprises an inner chuck segment and an outer chuck section concentrically arranged relative to a center of said mount surface with a gap interposed therebetween to prevent said electrostatic chuck from being distorted due to thermal stress, said outer chuck section comprising said at least three chuck segments, said inner chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween, said DC power supply section being arranged to supply the conductive layer of said inner chuck segment with a DC electric potential.

Claim 7

The apparatus according to claim 5, wherein said DC power supply section is arranged to substantially simultaneously supply the conductive layers of said at least three chuck segments and said inner chuck segment with DC electric potentials substantially the same as each other.

Claim 8

The apparatus according to claim 5, wherein said at least three chuck segments are arranged in an angular direction relative to a center of said mount surface.

Claim 9

The apparatus according to claim 7, wherein said at least three chuck segments have substantially the same shape.

Claim 10

The apparatus according to claim 1, comprising heat transfer gas supply means for supplying a heat transfer gas into an interstice between said electrode chuck and said target object mounted thereon, wherein said heat transfer gas supply means has a plurality of supply holes formed in said mount surface at positions corresponding to said gap and has no supply holes at positions corresponding to said at least three chuck segments, for supplying said heat transfer gas.

Claim 11

The apparatus according to claim 9, wherein an outer end of said gap is closed by a seal member consisting essentially of an elastic material.

Claim 12

The apparatus according to claim 10, wherein a partition wall consisting essentially of an elastic material is arranged in said gap to divide said gap into regions.

Claim 13

The apparatus according to claim 11, wherein said heat transfer gas supply means is capable of setting said regions of said gap at different pressures on the basis of supply rates of said heat transfer gas, when said target object is mounted on said electrostatic chuck.

Claim 14

The apparatus according to claim 1, comprising heat transfer gas supply means for supplying a heat transfer gas into an interstice between said electrode chuck and said target object mounted thereon, wherein said heat transfer gas supply means has a plurality of supply holes formed to penetrate said at least three chuck segments from said mount surface and has no supply holes at positions corresponding to said gap, for supplying said heat transfer gas.

Claim 15

The apparatus according to claim 13, wherein said gap is filled with a filler consisting essentially of an elastic material.

Claim 16

A plasma processing apparatus for processing a target substrate, using a plasma, comprising: an airtight process chamber; exhaust means for exhausting and setting said process chamber into a vacuum state; process gas supply means for supplying a process gas into said process chamber; a lower electrode arranged in said process chamber and having a mount surface for supporting said target substrate; an upper electrode arranged in said process chamber and facing said lower electrode; an RF power supply section for applying an RF power between said upper and lower electrodes and generating an RF electric field in said process chamber to convert said process gas into plasma; an electrostatic chuck fixed to said mount surface, for attracting and holding said target object, said electrostatic chuck comprising an inner chuck segment and an outer chuck section concentrically arranged relative to a center of said mount surface with a gap interposed therebetween so as to separate said at least three chuck segments from each other, and to prevent said electrostatic chuck from being distorted due to thermal stress, said outer chuck section comprising at least three chuck segments arranged with a gap interposed therebetween to prevent said electrostatic chuck from being distorted due to thermal stress, each chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween; and a DC power supply section for supplying said conductive layer of each chuck segment with a DC electric potential.

Claim 17

A plasma processing apparatus for processing a target substrate, using a plasma, comprising: an airtight process chamber; exhaust means for exhausting and setting said process chamber into a vacuum state; process gas supply means for supplying a process gas into said process chamber; a lower electrode arranged in said process chamber and having a mount surface for supporting said target substrate; an upper electrode arranged in said process chamber and facing said lower electrode; an RF power supply section for applying an RF power between said upper and lower electrodes and generating an RF electric field in said process chamber to convert said process gas into plasma; an electrostatic chuck fixed to said mount surface, for attracting and holding said target object, said electrostatic chuck comprising an inner chuck segment and an outer chuck section concentrically arranged relative to a center of said mount surface with a gap interposed therebetween so as to separate said at least three chuck segments from each other, and to prevent said electrostatic chuck from being distorted due to thermal stress, said outer chuck section comprising at least three chuck segments arranged with a gap interposed therebetween to prevent said electrostatic chuck from being distorted due to thermal stress, each chuck segment having a pair of insulating ceramic layers and a conductive layer sandwiched therebetween; and a DC power supply section for supplying said conductive layer of each chuck segment with a DC electric potential.

Claim 18

The apparatus according to claim 15, wherein said at least three chuck segments are arranged in an angular direction relative to a center of said mount surface.

Claim 19

The apparatus according to claim 16, wherein said at least three chuck segments have substantially the same shape.

Claim 20

The apparatus according to claim 15, wherein said process gas supply means comprises a plurality of process gas spouting holes arranged on the bottom surface of said upper electrode.

Claim 21

The apparatus according to claim 15, further comprising a focus ring arranged on said mount surface to surround said electrostatic chuck.

Claim 22

The apparatus according to claim 15, wherein said process gas comprises an etching gas for etching said target object.