US6033587A
Expired / Lapsed
US
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Method and apparatus for low energy electron enhanced etching and cleaning of substrates in the positive column of a plasma
Assignee: Georgia Tech Research Corp
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Filing: 1997-12-03
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Granted: 2000-03-07
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Expires: 2017-12-03
Abstract
Abstract A method of low-damage, anisotropic etching and cleaning of substrates including mounting the substrate upon a mechanical support located within the positive column of a plasma discharge generated by either an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of being electrically biased. The substrate is subjected to the positive column, or electrically neutral portion, of a plasma of low-energy electrons and a species reactive with the substrate. An additional structure capable of being electrically biased can be placed within the plasma to control further the extraction or retardation of particles from the plasma.
Inventors
- 👤 Kevin P. Martin
- 👤 Harry P. Gillis
- 👤 Dmitri A. Choutov
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:26
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/32623; B; B08; B08B; B08B7/00; B08B7/0035; H01J37/32009; H01J37/32321; H01J37/3233; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/888
Claims Analysis
Total Claims: 47
Claim 1
Independent Claim
92 words
A process for low-damage anisotropic dry etching or cleaning of a substrate, comprising the steps of: placing a substrate on a mechanical support in the positive column of a plasma generated by a plasma reactor having a cathode and an anode, said mechanical support being separate from said cathode and said anode, subjecting the substrate to a positive column of said plasma including low energy electrons having a kinetic energy less than about 100 eV and at least one species reactive with the substrate; and generating the electrons with a cold cathode.
Claim 2
Dependent Claim
92 words
A process for low-damage anisotropic dry etching or cleaning of a substrate, comprising the steps of: placing a substrate on a mechanical support in the positive column of a plasma generated by a plasma reactor having a cathode and an anode, said mechanical support being separate from said cathode and said anode, subjecting the substrate to a positive column of said plasma including low energy electrons having a kinetic energy less than about 100 eV and at least one species reactive with the substrate; and generating the electrons with a cold cathode.
Claim 3
Dependent Claim
21 words
The process as defined in claim 1, wherein a plurality of substrates are placed in said positive column of said plasma.
Claim 4
Dependent Claim
21 words
The process defined in claim 2, wherein said plurality of substrates are arranged in a stack and separated from one another.
Claim 5
Dependent Claim
23 words
The process as defined in claim 1, wherein said reactive species is chosen such that a contaminant located on the substrate is removed.
Claim 6
Dependent Claim
22 words
The process as defined in claim 1, wherein said reactive species is chosen such that a portion of the substrate is removed.
Claim 7
Dependent Claim
35 words
The process as defined in claim 1, further comprising the step of selecting said reactive species from the group consisting of hydrogen, halogens, interhalogen compounds, hydrogen halides, volatile organic compounds, noble gasses, and mixtures thereof.
Claim 8
Dependent Claim
15 words
The process as defined in claim 1, wherein said plasma reactor generates a dc plasma.
Claim 9
Dependent Claim
15 words
The process as defined in claim 1, wherein said plasma reactor generates an ac plasma.
Claim 10
Dependent Claim
24 words
The process as defined in claim 1, wherein said mechanical support is electrically biased, said mechanical support imparting said electrical bias upon the substrate.
Claim 11
Dependent Claim
19 words
The process as defined in claim 1, wherein said mechanical support imparts a dc electrical bias upon the substrate.
Claim 12
Dependent Claim
19 words
The process as defined in claim 1, wherein said mechanical support imparts an ac electrical bias upon the substrate.
Claim 13
Dependent Claim
22 words
The process as defined in claim 1, wherein said mechanical support imparts both a dc and an ac bias upon the substrate.
Claim 14
Dependent Claim
34 words
The process as defined in claim 9, further comprising the step of periodically modulating said electrical bias of said mechanical support to a value below the value of the electrical potential of the plasma.
Claim 15
Dependent Claim
27 words
The process as defined in claim 1, further comprising the step of including an additional structure within said plasma, said additional structure capable of being electrically biased.
Claim 16
Dependent Claim
15 words
The process as defined in claim 14, wherein said additional structure is dc electrically biased.
Claim 17
Dependent Claim
15 words
The process as defined in claim 14, wherein said additional structure is ac electrically biased.
Claim 18
Dependent Claim
18 words
The process as defined in claim 14, wherein said additional structure is both ac and dc electrically biased.
Claim 19
Dependent Claim
96 words
A process for low-damage anisotropic dry etching or cleaning of a substrate, comprising the steps of: providing a direct current plasma reactor including a cathode and an anode; placing a substrate on the anode of the direct current plasma reactor; generating low energy electrons with a cold cathode; subjecting the substrate to a positive column of said plasma including low energy electrons having a kinetic energy less than about 100 eV and at least one species reactive with the substrate; and placing an additional structure within said plasma, said additional structure capable of being electrically biased.
Claim 20
Dependent Claim
96 words
A process for low-damage anisotropic dry etching or cleaning of a substrate, comprising the steps of: providing a direct current plasma reactor including a cathode and an anode; placing a substrate on the anode of the direct current plasma reactor; generating low energy electrons with a cold cathode; subjecting the substrate to a positive column of said plasma including low energy electrons having a kinetic energy less than about 100 eV and at least one species reactive with the substrate; and placing an additional structure within said plasma, said additional structure capable of being electrically biased.
Claim 21
Dependent Claim
14 words
The process as defined in claim 18, wherein said substrate is a conducting substrate.
Claim 22
Dependent Claim
15 words
The process as defined in claim 18, wherein said substrate is a semi conducting substrate.
Claim 23
Dependent Claim
15 words
The process as defined in claim 18, wherein said additional structure is dc electrically biased.
Claim 24
Dependent Claim
15 words
The process as defined in claim 18, wherein said additional structure is ac electrically biased.
Claim 25
Dependent Claim
18 words
The process as defined in claim 18, wherein said additional structure is both ac and dc electrically biased.
Claim 26
Independent Claim
78 words
An apparatus for low-damage anisotropic dry etching of a substrate, comprising: a plasma reactor having a cold cathode for generating electrons, and an anode; a mechanical support separate from said cathode and said anode designed to hold a substrate within the positive column of a plasma, said plasma generated by said plasma reactor, said positive column including low energy electrons having a kinetic energy less than about 100 eV and at least one species reactive with the substrate.
Claim 27
Independent Claim
78 words
An apparatus for low-damage anisotropic dry etching of a substrate, comprising: a plasma reactor having a cold cathode for generating electrons, and an anode; a mechanical support separate from said cathode and said anode designed to hold a substrate within the positive column of a plasma, said plasma generated by said plasma reactor, said positive column including low energy electrons having a kinetic energy less than about 100 eV and at least one species reactive with the substrate.
Claim 28
Dependent Claim
21 words
The apparatus as defined in claim 24, wherein a plurality of substrates are placed in said positive column of said plasma.
Claim 29
Dependent Claim
22 words
The apparatus as defined in claim 25, wherein said plurality of substrates are arranged in a stack and separated from one another.
Claim 30
Dependent Claim
15 words
The apparatus as defined in claim 24, wherein said plasma reactor generates a dc plasma.
Claim 31
Dependent Claim
15 words
The apparatus as defined in claim 24, wherein said plasma reactor generates an ac plasma.
Claim 32
Dependent Claim
24 words
The apparatus as defined in claim 24, wherein said mechanical support is electrically biased, said mechanical support imparting said electrical bias upon the substrate.
Claim 33
Dependent Claim
19 words
The apparatus as defined in claim 24, wherein said mechanical support imparts a dc electrical bias upon the substrate.
Claim 34
Dependent Claim
19 words
The apparatus as defined in claim 24, wherein said mechanical support imparts an ac electrical bias upon the substrate.
Claim 35
Dependent Claim
22 words
The apparatus as defined in claim 24, wherein said mechanical support imparts both a dc and an ac bias upon the substrate.
Claim 36
Dependent Claim
31 words
The apparatus as defined in claim 29, wherein said electrical bias of said mechanical support is modulated periodically to a value below the value of the electrical potential of the plasma.
Claim 37
Dependent Claim
27 words
The apparatus as defined in claim 24, further comprising the step of including an additional structure within said plasma, said additional structure capable of being electrically biased.
Claim 38
Dependent Claim
15 words
The apparatus as defined in claim 34, wherein said additional structure is dc electrically biased.
Claim 39
Dependent Claim
15 words
The apparatus as defined in claim 34, wherein said additional structure is ac electrically biased.
Claim 40
Dependent Claim
18 words
The apparatus as defined in claim 34, wherein said additional structure is both ac and dc electrically biased.
Claim 41
Independent Claim
95 words
An apparatus for low-damage anisotropic dry etching or cleaning of a substrate, comprising: a direct current plasma reactor including a cathode and an anode; a substrate placed on the anode of the direct current plasma reactor; means for generating low energy electrons with a cold cathode; means for subjecting the substrate to a positive column of said plasma including low energy electrons having a kinetic energy less than about 100 eV and at least one species reactive with the substrate; and an additional structure within said plasma, said additional structure capable of being electrically biased.
Claim 42
Independent Claim
95 words
An apparatus for low-damage anisotropic dry etching or cleaning of a substrate, comprising: a direct current plasma reactor including a cathode and an anode; a substrate placed on the anode of the direct current plasma reactor; means for generating low energy electrons with a cold cathode; means for subjecting the substrate to a positive column of said plasma including low energy electrons having a kinetic energy less than about 100 eV and at least one species reactive with the substrate; and an additional structure within said plasma, said additional structure capable of being electrically biased.
Claim 43
Dependent Claim
14 words
The apparatus as defined in claim 38, wherein said substrate is a conducting substrate.
Claim 44
Dependent Claim
15 words
The apparatus as defined in claim 38, wherein said substrate is a semi conducting substrate.
Claim 45
Dependent Claim
15 words
The apparatus as defined in claim 38, wherein said additional structure is dc electrically biased.
Claim 46
Dependent Claim
15 words
The apparatus as defined in claim 38, wherein said additional structure is ac electrically biased.
Claim 47
Dependent Claim
18 words
The apparatus as defined in claim 38, wherein said additional structure is both ac and dc electrically biased.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-07 | 2003-09-06 | 2004-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-07 | 2007-09-06 | 2008-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-07 | 2011-09-06 | 2012-03-07 | $7700.00 | Window Closed / Lapsed |