Patent US6034920A successfully refreshed from Google Patents.
US6034920A
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Semiconductor memory device having a back gate voltage controlled delay circuit
Assignee: Texas Instruments Inc
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Filing: 1998-11-24
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Granted: 2000-03-07
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Expires: 2018-11-24
Abstract
Abstract A semiconductor memory device has an address buffer (200, 230). A pre-decoder circuit (202, 232) receives the output of the address buffer (200, 230), and a memory array (212) receives the output of the pre-decoder circuit. A main amplifier (216, 248) in turn receives the output of the memory array (212, 244). An address transition detector (ATD) pulse generator circuit (204, 234) also receives the output of the address buffer (200, 230), and a pulse delay circuit (208, 240) receives the output of the address transition detector pulse generator circuit (204, 234). The pulse delay circuit (208, 240) also provides a main amplifier signal to the main amplifier (216, 248). The memory device further includes a voltage generator (206, 236) that generates a back gate voltage which is provided as a low voltage supply (V BB ) for the address transition detector (ATD) pulse generator circuit (204, 234) and the pulse delay circuit (208, 240). The address transition detector (ATD) pulse generator (204, 234) and the pulse delay circuit (208, 240) have a delay that is controlled by the back gate voltage (V BB ) and has a reduced dependency on a high voltage supply (V DD ) of the memory device.
Inventors
- 👤 Shunichi Sukegawa
- 👤 Shinji Bessho
- 👤 Tadashi Tachibana
- 👤 Hiroyuki Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 13:59
CPC Classifications
G; G11; G11C; G11C8/00; G11C8/18; G11C7/00; G11C7/06
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
182 words
A semiconductor memory device, comprising: an address buffer having an input and an output; a pre-decoder circuit coupled to receive the output of the address buffer; a memory array coupled to receive an output of the pre-decoder circuit; a main amplifier coupled to receive an output of the memory array; an address transition detector (ATD) pulse generator circuit coupled to receive the output of the address buffer; a pulse delay circuit coupled to receive an output of the address transition detector pulse generator circuit, and the pulse delay circuit coupled to provide a main amplifier signal to the main amplifier; and a voltage generator generating a back gate voltage, the voltage generator coupled to provide the back gate voltage to cells in the memory array and as a low voltage supply for the address transition detector (ATD) pulse generator circuit and the pulse delay circuit; the address transition detector (ATD) pulse generator and the pulse delay circuit having a delay that is controlled by the back gate voltage and has a reduced dependency on a high voltage supply of the memory device.
Claim 2
Dependent Claim
182 words
A semiconductor memory device, comprising: an address buffer having an input and an output; a pre-decoder circuit coupled to receive the output of the address buffer; a memory array coupled to receive an output of the pre-decoder circuit; a main amplifier coupled to receive an output of the memory array; an address transition detector (ATD) pulse generator circuit coupled to receive the output of the address buffer; a pulse delay circuit coupled to receive an output of the address transition detector pulse generator circuit, and the pulse delay circuit coupled to provide a main amplifier signal to the main amplifier; and a voltage generator generating a back gate voltage, the voltage generator coupled to provide the back gate voltage to cells in the memory array and as a low voltage supply for the address transition detector (ATD) pulse generator circuit and the pulse delay circuit; the address transition detector (ATD) pulse generator and the pulse delay circuit having a delay that is controlled by the back gate voltage and has a reduced dependency on a high voltage supply of the memory device.
Claim 3
Dependent Claim
62 words
The semiconductor memory device of claim 1, wherein the pulse delay circuit comprises: a voltage level swing converter circuit operable to convert a swing of an input signal to an intermediate signal having a swing between the back gate voltage and the high voltage supply; and a delay circuit operable to receive the intermediate signal and to provide a delayed output signal.
Claim 4
Dependent Claim
28 words
The semiconductor memory device of claim 2, wherein the voltage level swing converter circuit is a level shifter circuit and the delay circuit is an asymmetric delay circuit.
Claim 5
Dependent Claim
27 words
The semiconductor memory device of claim 1, wherein the high voltage supply is V DD and the back gate voltage is V BB in a DRAM device.
Claim 6
Dependent Claim
203 words
A semiconductor memory device, comprising: an address buffer having an input and an output; a pre-decoder circuit coupled to receive the output of the address buffer; a memory array coupled to receive an output of the pre-decoder circuit; a main amplifier coupled to receive an output of the memory array; an address transition detector (ATD) pulse generator circuit coupled to receive the output of the address buffer; a pulse delay circuit coupled to receive an output of the address transition detector pulse generator circuit, and the pulse delay circuit coupled to provide a main amplifier signal to the main amplifier; and a first voltage generator generating a first back gate voltage and coupled to provide the first back gate voltage to cells in the memory array; and a second voltage generator generating a second back gate voltage and coupled to provide the second back gate voltage as a low voltage supply for the address transition detector (ATD) pulse generator circuit and the pulse delay circuit; the address transition detector (ATD) pulse generator and the pulse delay circuit having a delay that is controlled by the second back gate voltage and has a reduced dependency on a high voltage supply of the memory device.
Claim 7
Dependent Claim
203 words
A semiconductor memory device, comprising: an address buffer having an input and an output; a pre-decoder circuit coupled to receive the output of the address buffer; a memory array coupled to receive an output of the pre-decoder circuit; a main amplifier coupled to receive an output of the memory array; an address transition detector (ATD) pulse generator circuit coupled to receive the output of the address buffer; a pulse delay circuit coupled to receive an output of the address transition detector pulse generator circuit, and the pulse delay circuit coupled to provide a main amplifier signal to the main amplifier; and a first voltage generator generating a first back gate voltage and coupled to provide the first back gate voltage to cells in the memory array; and a second voltage generator generating a second back gate voltage and coupled to provide the second back gate voltage as a low voltage supply for the address transition detector (ATD) pulse generator circuit and the pulse delay circuit; the address transition detector (ATD) pulse generator and the pulse delay circuit having a delay that is controlled by the second back gate voltage and has a reduced dependency on a high voltage supply of the memory device.
Claim 8
Dependent Claim
34 words
The semiconductor memory device of claim 5, wherein the second voltage generator includes a voltage level trimming circuit that can be used to adjust the second back gate voltage and thereby adjust the delay.
Claim 9
Dependent Claim
63 words
The semiconductor memory device of claim 5, wherein the pulse delay circuit comprises: a voltage level swing converter circuit operable to convert a swing of an input signal to an intermediate signal having a swing between the second back gate voltage and the high voltage supply; and a delay circuit operable to receive the intermediate signal and to provide a delayed output signal.
Claim 10
Dependent Claim
28 words
The semiconductor memory device of claim 7, wherein the voltage level swing converter circuit is a level shifter circuit and the delay circuit is an asymmetric delay circuit.
Claim 11
Dependent Claim
27 words
The semiconductor memory device of claim 5, wherein the high voltage supply is V DD and the back gate voltage is V BB in a DRAM device.
References Cited (Backward Citations)
US5768214A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-07 | 2003-09-06 | 2004-03-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-07 | 2007-09-06 | 2008-03-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-07 | 2011-09-06 | 2012-03-07 | $7700.00 | Window Closed / Lapsed |