Device fabrication involving surface planarization

Claim 2

A process for fabricating a semiconductor device, comprising the steps of: forming a layer of planarization material on a topographic substrate surface wherein the planarization material has a viscosity of about 20 cp (centipoise) to about 40,000 cp during planarization; at least partially solidifying a first area of the layer of planarization material wherein the first area is proximate to the perimeter of the layer of planarization material and substantially surrounds a second area of the layer of planarization material; contacting the layer of planarization material with a flat surface of an object with sufficient force to substantially transfer the surface flatness from the flat surface of the object to the layer of planarization material wherein the planarization material in the first area is sufficiently solidified to substantially confine the planarization material in the second area throughout the height of the planarization material in the first area when the object with the flat surface is placed in contact therewith; solidifying the layer of planarization material while in contact with the flat surface of the object wherein the planarization material undergoes a reduction in volume of less than about 10%; and separating the flat surface of the object from contact with the layer of planarization material.

Claim 3

The process of claim 1 wherein contacting the layer of planarization material with the flat surface of the object causes at least a portion of the planarization material to flow from the second area into the first area and further comprising subjecting the first area of the topographic substrate surface to conditions sufficient to at least partially solidify the planarization material that flows from the second area into the first area.

Claim 4

The process of claim 2 wherein the planarization material that flows from the second area into the first area during the contacting step is at least partially solidified by exposure to ultraviolet radiation.

Claim 5

The process of claim 1 wherein the viscosity of the planarization material in the second area is not substantially increased by the at least partial solidification of the planarization material in the first area.

Claim 6

The process of claim 1 wherein the average height of the layer of planarization material formed on the topographic substrate is greater in the second area than in the first area.

Claim 7

The process of claim 1 further comprising removing at least a portion of the planarization material in the first area, prior to contacting the layer of planarization material with the flat surface of the object.

Claim 8

The process of claim 6 wherein the planarization material in the first area is removed using a technique selected from the group consisting of edge bead removal and etching.

Claim 9

The process of claim 1 further comprising reducing the thickness of at least a portion of the topographic substrate surface in the first area, prior to forming the layer of planarization material thereon.

Claim 10

The process of claim 1 wherein the first area is a strip of planarization material that is coextensive with the perimeter of the layer of planarization material and has a width less than about 10 mm (millimeters) wide.

Claim 11

The process of claim 9 wherein the width of the strip is less than about 3 mm (millimeters) wide.

Claim 12

The process of claim 1 wherein the planarization material is solidified by exposure to ultraviolet radiation.

Claim 13

The process of claim 1 further comprising placing a layer of release material between the layer of planarization material and the flat surface of the object prior to contacting the layer of planarization material with the flat surface of the object.

Claim 14

The process of claim 12 wherein the layer of release material is selected from the group consisting of a fluoropolymer and silicone rubber.

Claim 15

The process of claim 12 wherein the layer of release material is formed on the flat surface of the object.

Claim 16

The process of claim 12 wherein the layer of release material is applied on the layer of planarization material.

Claim 17

The process of claim 15 wherein the layer of release material is a sheet and the sheet is applied onto the layer of planarization material using a center-to-edge technique.

Claim 18

The process of claim 1 wherein the flat surface of the object is separated from contact with the layer of planarization material using a tool.

Claim 19

The process of claim 17 wherein the tool is made from a material selected from the group consisting of teflon and plastic.

Claim 20

The process of claim 12 wherein the layer of release material is separated from contact with the layer of planarization material by flexing the edges of the release material.

Claim 21

The process of claim 1 wherein the layer of planarization material is formed on the topographic substrate surface by spin-coating.

Claim 22

The process of claim 1 wherein topographic features are repeated over the surface of the substrate to within a distance less than about 2-3 mm (millimeters) from the edge of the substrate.

Claim 23

The process of claim 1 wherein topographic features extend to the edges of the second area and wherein a portion of the first area that is coextensive with the perimeter of the second area is at least partially solidified.

Claim 24

The process of claim 22 wherein the portion of the first area that is coextensive with the perimeter of the second area has a width greater than about 1 mm.

Claim 25

A process for fabricating a semiconductor device, comprising the steps of: forming a layer of planarization material on a topographic substrate surface wherein the planarization material has a viscosity of about 20 cp (centipoise) to about 40,000 cp during planarization; contacting the layer of planarization material with a flat surface of an object with a force such that the layer of planarization material does not significantly flow, except near the edges of the substrate; at least partially solidifying a first area of the layer of planarization material wherein the first area is proximate to the perimeter of the layer of planarization material and substantially surrounds a second area of the layer of planarization material; contacting the layer of planarization material with the flat surface of the object with sufficient force to substantially transfer the surface flatness from the flat surface of the object to the layer of planarization material, wherein the planarization material in the first area is sufficiently solidified to substantially confine the planarization material in the second area throughout the height of the planarization material in the first area when the object with the flat surface is placed in contact therewith; solidifying the layer of planarization material while in contact with the flat surface of the object wherein the planarization material undergoes a reduction in volume of less than about 10%; and separating the flat surface of the object from contact with the layer of planarization material.

Claim 26

A process for fabricating a semiconductor device, comprising the steps of: forming a layer of planarization material on a topographic substrate surface wherein the planarization material has a viscosity of about 20 cp (centipoise) to about 40,000 cp during planarization; contacting the layer of planarization material with a flat surface of an object with a force such that the layer of planarization material does not significantly flow, except near the edges of the substrate; at least partially solidifying a first area of the layer of planarization material wherein the first area is proximate to the perimeter of the layer of planarization material and substantially surrounds a second area of the layer of planarization material; contacting the layer of planarization material with the flat surface of the object with sufficient force to substantially transfer the surface flatness from the flat surface of the object to the layer of planarization material, wherein the planarization material in the first area is sufficiently solidified to substantially confine the planarization material in the second area throughout the height of the planarization material in the first area when the object with the flat surface is placed in contact therewith; solidifying the layer of planarization material while in contact with the flat surface of the object wherein the planarization material undergoes a reduction in volume of less than about 10%; and separating the flat surface of the object from contact with the layer of planarization material.

Claim 27

The process of claim 24 wherein contacting the layer of planarization material with the flat surface of the object causes at least a portion of the planarization material to flow from the second area into the first area and further comprising subjecting the first area of the topographic substrate surface to conditions sufficient to at least partially solidify the planarization material that flows from the second area into the first area.

Claim 28

The process of claim 24 wherein the planarization material that flows from the second area into the first area during the contacting step is at least partially solidified by exposure to ultraviolet radiation.

Claim 29

The process of claim 24 wherein the viscosity of the planarization material in the second area is not substantially increased by the at least partial solidification of the planarization material in the first area.

Claim 30

The process of claim 24 wherein the average height of the layer of planarization material formed on the topographic substrate is greater in the second area than in the first area.

Claim 31

The process of claim 24 further comprising removing at least a portion of the planarization material in the first area, prior to contacting the layer of planarization material with the flat surface of the object with the force such that the layer of planarization material does not significantly flow.

Claim 32

The process of claim 29 wherein the planarization material in the first area is removed using a technique selected from the group consisting of edge bead removal and etching.

Claim 33

The process of claim 24 further comprising reducing the thickness of at least a portion of the topographic substrate surface in the first area, prior to forming the layer of planarization material thereon.

Claim 34

The process of claim 24 wherein the first area is a strip of planarization material that is coextensive with the perimeter of the layer of planarization material and has a width less than about 10 mm (millimeters) wide.

Claim 35

The process of claim 32 wherein the width of the strip is less than about 3 mm (millimeters) wide.

Claim 36

The process of claim 24 wherein the planarization material is solidified by exposure to ultraviolet radiation.

Claim 37

The process of claim 24 further comprising placing a layer of release material between the layer of planarization material and the flat surface of the object prior to contacting the layer of planarization material with the flat surface of the object with the force such that the layer of planarization material does not significantly flow.

Claim 38

The process of claim 35 wherein the layer of release material is made from a material selected from the group consisting of a fluoropolymer and silicone rubber.

Claim 39

The process of claim 35 wherein the layer of release material is formed on the flat surface of the object.

Claim 40

The process of claim 35 wherein the layer of release material is applied on the layer of planarization material.

Claim 41

The process of claim 38 wherein the layer of release material is a sheet and the sheet is applied onto the layer of planarization material using a center-to-edge technique.

Claim 42

The process of claim 35 wherein the layer of release material is separated from contact with the layer of planarization material by flexing the edges of the release material.

Claim 43

The process of claim 24 wherein topographic features are repeated over the surface of the substrate to within a distance less than about 2-3 mm (millimeters) from the edge of the substrate.

Claim 44

The process of claim 24 wherein topographic features extend to the edges of the second area and wherein a portion of the first area that is coextensive with the perimeter of the second area is at least partially solidified.

Claim 45

The process of claim 42 wherein the portion of the first area that is coextensive with the perimeter of the second area has a width greater than about 1 mm.