US6052301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor memory device
Assignee: Fujitsu Ltd
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Filing: 1999-03-19
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Granted: 2000-04-18
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Expires: 2019-03-19
Abstract
Abstract According to the present invention, the main word lines arranged in a row direction have a linear pattern shape, and in the region where sub word decoder circuits are formed, the pattern of the main word lines has a shape whereby the pattern branches and splits into a plurality of lines and then reconverges, in the direction of the row. In the region where the line splits, relatively small island-shaped patterns of the conducting layer are located, forming nodes which have a difference electric potential from the main word lines. The main word lines are constituted by a first metal conducting layer, similarly to the prior art. In other words, small island-shaped metal layer patterns, which are electrically different from the main word lines are formed inside the conducting metal layer pattern constituting the main word lines, similarly to island formed in the middle of a river, for example.
Inventors
- 👤 Toshimi Ikeda
- 👤 Kuninori Kawabata
- 👤 Masato Takita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:10
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; G; G11; G11C; G11C7/00; G11C7/18; G11C8/00; G11C8/14; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/834
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
161 words
A semiconductor memory device having a plurality of memory cells and a plurality of conducting layers formed on a semiconductor substrate, comprising: a plurality of main word lines composed of a first conducting layer formed on said semiconductor substrate and arranged in a row direction in the region of said memory cells; a plurality of sub word lines composed of a second conducting layer positioned below said first conducting layer formed on said semiconductor substrate; and sub word decoder circuits for driving said sub word lines, positioned along the path of said main word lines; wherein, in the region in which said sub word decoder circuits are formed, the pattern of said main word lines has a shape whereby said pattern temporarily branches and splits into a plurality of lines and then reconverges, along said row direction, island-shaped patterns which are electrically different from said main word lines being formed within said split region by means of said first conducting layer.
Claim 2
Dependent Claim
161 words
A semiconductor memory device having a plurality of memory cells and a plurality of conducting layers formed on a semiconductor substrate, comprising: a plurality of main word lines composed of a first conducting layer formed on said semiconductor substrate and arranged in a row direction in the region of said memory cells; a plurality of sub word lines composed of a second conducting layer positioned below said first conducting layer formed on said semiconductor substrate; and sub word decoder circuits for driving said sub word lines, positioned along the path of said main word lines; wherein, in the region in which said sub word decoder circuits are formed, the pattern of said main word lines has a shape whereby said pattern temporarily branches and splits into a plurality of lines and then reconverges, along said row direction, island-shaped patterns which are electrically different from said main word lines being formed within said split region by means of said first conducting layer.
Claim 3
Dependent Claim
59 words
The semiconductor memory device according to claim 1, wherein said sub word decoder circuits comprise a P-type transistor and an N-type transistor, the source or drain regions of said transistors being connected to said island-shaped patterns formed by said first conducting layer, and said island-shaped patterns being connected to said sub word lines formed by said second conducting layer.
Claim 4
Dependent Claim
36 words
The semiconductor memory device according to claim 2, wherein said main word lines and said sub word lines are arranged in said row direction in the region in which said sub word decoder circuits are formed.
Claim 5
Dependent Claim
57 words
The semiconductor memory device according to claim 2, wherein said second conducting layer is constituted by a polysilicon layer doped with an N-type impurity, said first conducting layer is constituted by a metal conducting layer, and the island-shaped patterns formed by said first conducting layer are connected to the source or drain regions of said P-type transistors.
Claim 6
Dependent Claim
149 words
A semiconductor memory device having a plurality of memory cells and a plurality of conducting layers formed on a semiconductor substrate, comprising: a plurality of main word lines composed of a first conducting layer formed on said semiconductor substrate and arranged in a row direction in the region of said memory cells; a plurality of sub word lines composed of a second conducting layer positioned below said first conducting layer formed on said semiconductor substrate; and sub word decoder circuits for driving said sub word lines, positioned along the path of said main word lines; wherein the pattern of said main word lines has a shape whereby said pattern temporarily branches and splits into a plurality of lines and then reconverges, along said row direction, island-shaped patterns which are electrically different from said main word lines being formed within said split region by means of said first conducting layer.
Claim 7
Dependent Claim
149 words
A semiconductor memory device having a plurality of memory cells and a plurality of conducting layers formed on a semiconductor substrate, comprising: a plurality of main word lines composed of a first conducting layer formed on said semiconductor substrate and arranged in a row direction in the region of said memory cells; a plurality of sub word lines composed of a second conducting layer positioned below said first conducting layer formed on said semiconductor substrate; and sub word decoder circuits for driving said sub word lines, positioned along the path of said main word lines; wherein the pattern of said main word lines has a shape whereby said pattern temporarily branches and splits into a plurality of lines and then reconverges, along said row direction, island-shaped patterns which are electrically different from said main word lines being formed within said split region by means of said first conducting layer.
Claim 8
Dependent Claim
101 words
A semiconductor memory device having a plurality of memory cells and a plurality of conducting layers formed on a semiconductor substrate, comprising: a plurality of word lines composed of a conducting layer formed on said semiconductor substrate and arranged in a prescribed direction within the region of said memory cells, wherein the pattern of said word lines has a shape whereby said pattern branches temporarily and splits into a plurality of lines and then reconverges, along said prescribed direction, island-shaped patterns, which are electrically different from said word lines, being formed within said separated regions by means of said conducting layers.
Claim 9
Dependent Claim
101 words
A semiconductor memory device having a plurality of memory cells and a plurality of conducting layers formed on a semiconductor substrate, comprising: a plurality of word lines composed of a conducting layer formed on said semiconductor substrate and arranged in a prescribed direction within the region of said memory cells, wherein the pattern of said word lines has a shape whereby said pattern branches temporarily and splits into a plurality of lines and then reconverges, along said prescribed direction, island-shaped patterns, which are electrically different from said word lines, being formed within said separated regions by means of said conducting layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-04-18 | 2003-10-18 | 2004-04-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-04-18 | 2007-10-18 | 2008-04-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-04-18 | 2011-10-18 | 2012-04-18 | $7700.00 | Window Closed / Lapsed |