US6069092A
Expired / Lapsed
US
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Dry etching method and semiconductor device fabrication method
Assignee: Panasonic Holdings Corp
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Filing: 1998-10-26
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Granted: 2000-05-30
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Expires: 2018-10-26
Abstract
Abstract The present invention discloses a dry etching method using a high density plasma, in which a fluorocarbon gas, whose fluorine to carbon ratio is less than 2:1, is used. Such arrangement provides improved etching selectivity ratios to the resist film. The adding of an inert gas and oxygen to such a fluorocarbon gas provides further improved etching selectivity ratios and improved etching rates.
Inventors
- 👤 Shinichi Imai
- 👤 Nobuhiro Jiwari
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:18
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
112 words
A dry etching method comprising: introducing an etching gas containing at least carbon and fluorine into a reactor within which a lower electrode for supporting a substrate to be processed is formed; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the substrate to be processed using the plasma by applying a radio frequency power to the lower electrode, wherein the ratio of the fluorine and the carbon contained in the etching gas is less than 2:1, and the etching process on the substrate to be processed is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 2
Dependent Claim
112 words
A dry etching method comprising: introducing an etching gas containing at least carbon and fluorine into a reactor within which a lower electrode for supporting a substrate to be processed is formed; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the substrate to be processed using the plasma by applying a radio frequency power to the lower electrode, wherein the ratio of the fluorine and the carbon contained in the etching gas is less than 2:1, and the etching process on the substrate to be processed is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 3
Dependent Claim
47 words
The dry etching method of claim 1, wherein the etching gas contains at least one of a C 5 F 8 gas, a C 4 F 6 gas, a C 3 F 4 gas, a C 2 F 2 gas and a (CF 3 CO) 2 gas.
Claim 4
Dependent Claim
15 words
The dry etching method of claim 1, wherein the etching gas contains an inert gas.
Claim 5
Dependent Claim
25 words
The dry etching method of claim 3, the inert gas comprises at least one of an Ar gas, an Xe gas and a Kr gas.
Claim 6
Dependent Claim
16 words
The dry etching method of claim 1, wherein the etching gas contains an oxygen containing gas.
Claim 7
Dependent Claim
29 words
The dry etching method of claim 5, wherein the oxygen containing gas comprises at least one of an O 2 gas, a CO gas and a CO 2 gas.
Claim 8
Dependent Claim
21 words
The dry etching method of claim 1, wherein the plasma has a plasma density of 10 11 cm- 3 or more.
Claim 9
Dependent Claim
98 words
A dry etching method comprising: introducing an etching gas containing at least carbon and fluorine into a reactor within which a lower electrode for supporting a substrate to be processed is formed; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the substrate to be processed using the plasma by applying a radio frequency power to the lower electrode, wherein the ratio of the fluorine and the carbon contained in the etching gas is less than 2:1, and the radio frequency power has a peak-to-peak voltage of 1.5 kV or less.
Claim 10
Dependent Claim
98 words
A dry etching method comprising: introducing an etching gas containing at least carbon and fluorine into a reactor within which a lower electrode for supporting a substrate to be processed is formed; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the substrate to be processed using the plasma by applying a radio frequency power to the lower electrode, wherein the ratio of the fluorine and the carbon contained in the etching gas is less than 2:1, and the radio frequency power has a peak-to-peak voltage of 1.5 kV or less.
Claim 11
Dependent Claim
47 words
The dry etching method of claim 8, wherein the etching gas contains at least one of a C 5 F 8 gas, a C 4 F 6 gas, a C 3 F 4 gas, a C 2 F 2 gas and a (CF 3 CO) 2 gas.
Claim 12
Dependent Claim
15 words
The dry etching method of claim 8, wherein the etching gas contains an inert gas.
Claim 13
Dependent Claim
25 words
The dry etching method of claim 10, the inert gas comprises at least one of an Ar gas, an Xe gas and a Kr gas.
Claim 14
Dependent Claim
16 words
The dry etching method of claim 8, wherein the etching gas contains an oxygen containing gas.
Claim 15
Dependent Claim
29 words
The dry etching method of claim 12, wherein the oxygen containing gas comprises at least one of an O 2 gas, a CO gas and a CO 2 gas.
Claim 16
Dependent Claim
21 words
The dry etching method of claim 8, wherein the plasma has a plasma density of 10 11 cm -3 or more.
Claim 17
Dependent Claim
34 words
The dry etching method of claim 8, wherein the etching on the substrate to be processed is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 18
Independent Claim
145 words
A method of fabricating a semiconductor device comprising: depositing a silicon dioxide film on a substrate; forming a resist pattern on the silicon dioxide film; placing the substrate on which the silicon dioxide film and the resist pattern are formed on a lower electrode formed within a reactor; introducing an etching gas containing at least carbon and fluorine into the reactor; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the silicon dioxide film using the plasma and the resist pattern as a mask by applying a radio frequency power to the lower electrode, wherein the ratio of the fluorine and carbon contained in the etching gas is less than 2:1, and the etching process on the silicon dioxide film is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 19
Independent Claim
145 words
A method of fabricating a semiconductor device comprising: depositing a silicon dioxide film on a substrate; forming a resist pattern on the silicon dioxide film; placing the substrate on which the silicon dioxide film and the resist pattern are formed on a lower electrode formed within a reactor; introducing an etching gas containing at least carbon and fluorine into the reactor; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the silicon dioxide film using the plasma and the resist pattern as a mask by applying a radio frequency power to the lower electrode, wherein the ratio of the fluorine and carbon contained in the etching gas is less than 2:1, and the etching process on the silicon dioxide film is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 20
Dependent Claim
18 words
The method of fabricating a semiconductor device of claim 16, wherein the etching gas contains an inert gas.
Claim 21
Dependent Claim
19 words
The method of fabricating a semiconductor device of claim 16, wherein the etching gas contains an oxygen containing gas.
Claim 22
Independent Claim
133 words
A method of fabricating a semiconductor device comprising: deposition a silicon dioxide film on a substrate; forming a resist pattern on the silicon dioxide film; placing the substrate on which the silicon dioxide film and the resist pattern are formed on a lower electrode formed within a reactor; introducing an etching gas containing at least carbon and fluorine into the reactor; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the silicon dioxide film using the plasma and the resist pattern as a mask by applying a radio frequency power to the lower electrode, wherein the ratio of the fluorine and the carbon contained in the etching gas is less than 2:1, and the radio frequency power has a peak-to-peak voltage is 1.5 kV or less.
Claim 23
Independent Claim
133 words
A method of fabricating a semiconductor device comprising: deposition a silicon dioxide film on a substrate; forming a resist pattern on the silicon dioxide film; placing the substrate on which the silicon dioxide film and the resist pattern are formed on a lower electrode formed within a reactor; introducing an etching gas containing at least carbon and fluorine into the reactor; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the silicon dioxide film using the plasma and the resist pattern as a mask by applying a radio frequency power to the lower electrode, wherein the ratio of the fluorine and the carbon contained in the etching gas is less than 2:1, and the radio frequency power has a peak-to-peak voltage is 1.5 kV or less.
Claim 24
Dependent Claim
18 words
The method of fabricating a semiconductor device of claim 19, wherein the etching gas contains an inert gas.
Claim 25
Dependent Claim
19 words
The method of fabricating a semiconductor device of claim 19, wherein the etching gas contains an oxygen containing gas.
Claim 26
Dependent Claim
37 words
The method of fabricating a semiconductor device of claim 19, wherein the etching process on the silicon dioxide film is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 27
Dependent Claim
106 words
A dry etching method comprising: introducing an etching gas containing at least carbon and fluorine into a reactor within which a lower electrode for supporting a substrate to be processed is formed; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the substrate to be processed using the plasma by applying a radio frequency power to the lower electrode, wherein the etching gas contains a carbon double bond containing perfluorocarbon gas, and the etching process on the substrate to be process is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 28
Dependent Claim
106 words
A dry etching method comprising: introducing an etching gas containing at least carbon and fluorine into a reactor within which a lower electrode for supporting a substrate to be processed is formed; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the substrate to be processed using the plasma by applying a radio frequency power to the lower electrode, wherein the etching gas contains a carbon double bond containing perfluorocarbon gas, and the etching process on the substrate to be process is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 29
Independent Claim
140 words
A method of fabricating a semiconductor device comprising: depositing a silicon dioxide film on a substrate; forming a resist pattern on the silicon dioxide film; placing the substrate on which the silicon dioxide film and the resist pattern are formed on a lower electrode formed within a reactor; introducing an etching gas containing at least carbon and fluorine into the reactor; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the silicon dioxide film using the plasma and the resist pattern as a mask by applying a radio frequency power to the lower electrode, wherein the etching gas contains a carbon double bond containing perfluorocarbon gas, and the etching process on the silicon dioxide film is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
Claim 30
Independent Claim
140 words
A method of fabricating a semiconductor device comprising: depositing a silicon dioxide film on a substrate; forming a resist pattern on the silicon dioxide film; placing the substrate on which the silicon dioxide film and the resist pattern are formed on a lower electrode formed within a reactor; introducing an etching gas containing at least carbon and fluorine into the reactor; generating a plasma comprising the etching gas in the reactor; and performing an etching process on the silicon dioxide film using the plasma and the resist pattern as a mask by applying a radio frequency power to the lower electrode, wherein the etching gas contains a carbon double bond containing perfluorocarbon gas, and the etching process on the silicon dioxide film is performed in the reactor with a wall surface of the reactor heated to above 100 degrees centigrade.
References Cited (Backward Citations)
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