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US6080592A
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Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications
Assignee: Symetrix Corp
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Filing: 1995-06-07
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Granted: 2000-06-27
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Expires: 2015-06-07
Abstract
Abstract An integrated curcuit includes a layered superlattice material having the formula A1w1+a1A2w2+a2 . . . Ajwj+ajS1x1+s1S2x2+s2 . . . Skxk+skB1y1+b1B2y2+b2 . . . Blyl+blQz-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.
Inventors
- 👤 Carlos A. Paz de Araujo
- 👤 Joseph D. Cuchiaro
- 👤 Michael C. Scott
- 👤 Larry D. McMillan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 11:13
CPC Classifications
B; B05; B05D; B05D1/00; B05D1/60; B05D3/00; B05D3/04; B05D3/0493; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4412; C23C16/448; C23C16/4486; C23C16/455; C23C16/45561; C23C16/45563; C23C16/4558; C23C16/46; C23C16/48; C23C16/482; C23C16/52; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1216; C23C18/1225; C23C26/00; C23C26/02; C30; C30B; C30B29/00; C30B29/60; C30B29/68; C30B7/00; H; H01; H01C; H01C7/00; H01C7/10; H01C7/1013; H10; H10B; H10B12/00; H10B12/30; H10B53/00; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10D1/692; H10N; H10N30/00; H10N30/01; H10N30/07; H10N30/074; H10N30/077; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6342; H05; H05K; H05K3/00; H05K3/10; H05K3/105; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
84 words
A method of fabricating a memory device having low fatigue, said method comprising the steps of: providing a substrate; forming on said substrate a memory cell, said step of forming said memory cell on said substrate including a step of spontaneously forming a layered superlattice material structure in a thin film, said layered superlattice material structure having oxygen octahedra layers alternating with non-perovskite layers, with said oxygen octahedra layers and non-perovskite layers linked in an interdependent manner; and completing said memory on said substrate.
Claim 2
Independent Claim
84 words
A method of fabricating a memory device having low fatigue, said method comprising the steps of: providing a substrate; forming on said substrate a memory cell, said step of forming said memory cell on said substrate including a step of spontaneously forming a layered superlattice material structure in a thin film, said layered superlattice material structure having oxygen octahedra layers alternating with non-perovskite layers, with said oxygen octahedra layers and non-perovskite layers linked in an interdependent manner; and completing said memory on said substrate.
Claim 3
Dependent Claim
37 words
A method as in claim 1 wherein said layered superlattice material comprises one of the elements from the group consisting of strontium, calcium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, scandium, yttrium, lanthanum, antimony, chromium, and thallium.
Claim 4
Dependent Claim
40 words
A method as in claim 1 wherein said layered superlattice material comprises a material selected from the group consisting of: strontium bismuth tantalate, strontium bismuth niobate, strontium bismuth tantalum niobate, barium bismuth tantalate, lead bismuth tantalate, and barium bismuth niobate.
Claim 5
Independent Claim
63 words
A method of fabricating a ferroelectric memory device having low fatigue, said method comprising the steps of: providing a substrate; forming on said substrate a memory cell including a thin film of a layered superlattice material having ferroelectric layers alternating with non-ferroelectric shock absorber layers, with said ferroelectric and non-ferroelectric layers linked in an interdependent manner; and completing said memory on said substrate.
Claim 6
Independent Claim
63 words
A method of fabricating a ferroelectric memory device having low fatigue, said method comprising the steps of: providing a substrate; forming on said substrate a memory cell including a thin film of a layered superlattice material having ferroelectric layers alternating with non-ferroelectric shock absorber layers, with said ferroelectric and non-ferroelectric layers linked in an interdependent manner; and completing said memory on said substrate.
Claim 7
Dependent Claim
37 words
A method as in claim 4 wherein said layered superlattice material comprises one of the elements from the group consisting of strontium, calcium, cadmium, lead, tantalum, hafnium, tungsten, niobium, zirconium, scandium, yttrium, lanthanum, antimony, chromium, and thallium.
Claim 8
Dependent Claim
31 words
A method as in claim 4 wherein said layered superlattice material comprises a material selected from the group consisting of: strontium bismuth tantalate, strontium bismuth niobate, and strontium bismuth tantalum niobate.
Claim 9
Independent Claim
81 words
A method of fabricating an integrated circuit memory device, said method comprising the steps of: providing a substrate; forming on said substrate a memory cell including a thin film of a material selected from the group of compounds consisting of strontium bismuth titanate, strontium bismuth tantalate, strontium bismuth niobate, strontium bismuth tantalum niobate, lead bismuth niobate, barium bismuth tantalate, lead bismuth tantalate, and barium bismuth niobate; and completing an integrated circuit on said substrate, said integrated circuit including said memory cell.
Claim 10
Independent Claim
81 words
A method of fabricating an integrated circuit memory device, said method comprising the steps of: providing a substrate; forming on said substrate a memory cell including a thin film of a material selected from the group of compounds consisting of strontium bismuth titanate, strontium bismuth tantalate, strontium bismuth niobate, strontium bismuth tantalum niobate, lead bismuth niobate, barium bismuth tantalate, lead bismuth tantalate, and barium bismuth niobate; and completing an integrated circuit on said substrate, said integrated circuit including said memory cell.
Claim 11
Dependent Claim
20 words
A method as in claim 7 wherein said step of forming comprises forming a thin film of strontium bismuth titanate.
Claim 12
Dependent Claim
20 words
A method as in claim 7 wherein said step of forming comprises forming a thin film of strontium bismuth tantalate.
Claim 13
Dependent Claim
19 words
A method as in claim 7 wherein said step of forming comprises forming a thin film strontium bismuth niobate.
Claim 14
Dependent Claim
21 words
A method as in claim 7 wherein said step of forming comprises forming a thin film of strontium bismuth tantalum niobate.
Claim 15
Dependent Claim
20 words
A method as in claim 7 wherein said step of forming comprises forming a thin film of lead bismuth niobate.
Claim 16
Dependent Claim
20 words
A method as in claim 7 wherein said step of forming comprises forming a thin film of barium bismuth tantalate.
Claim 17
Dependent Claim
20 words
A method as in claim 7 wherein said step of forming comprises forming a thin film of lead bismuth tantalate.
Claim 18
Dependent Claim
20 words
A method as in claim 7 wherein said step of forming comprises forming a thin film of barium bismuth niobate.
Claim 19
Dependent Claim
29 words
A method as in claim 7 wherein said step of forming comprises forming a thin film of a solid solution of two or more compounds selected from said group.
Claim 20
Independent Claim
43 words
A method of fabricating a ferroelectric memory, said method comprising the steps of: forming a first electrode on a substrate; forming a thin film of a layered superlattice ferroelectric material on said first electrode; and forming a second electrode on said ferroelectric material.
Claim 21
Independent Claim
43 words
A method of fabricating a ferroelectric memory, said method comprising the steps of: forming a first electrode on a substrate; forming a thin film of a layered superlattice ferroelectric material on said first electrode; and forming a second electrode on said ferroelectric material.
Claim 22
Independent Claim
84 words
A method of fabricating an integrated circuit memory device, said method comprising the steps of: providing a substrate; forming on said substrate a memory including a thin film consisting essentially of material selected from the group consisting of strontium bismuth titanate, strontium bismuth tantalate, strontium bismuth niobate, strontium bismuth tantalum niobate, lead bismuth niobate, barium bismuth tantalate, lead bismuth niobate, lead bismuth tantalate, barium bismuth niobate, and combinations thereof; and completing an integrated circuit on said substrate, said integrated circuit including said memory cell.
Claim 23
Independent Claim
84 words
A method of fabricating an integrated circuit memory device, said method comprising the steps of: providing a substrate; forming on said substrate a memory including a thin film consisting essentially of material selected from the group consisting of strontium bismuth titanate, strontium bismuth tantalate, strontium bismuth niobate, strontium bismuth tantalum niobate, lead bismuth niobate, barium bismuth tantalate, lead bismuth niobate, lead bismuth tantalate, barium bismuth niobate, and combinations thereof; and completing an integrated circuit on said substrate, said integrated circuit including said memory cell.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-27 | 2003-12-27 | 2004-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-27 | 2007-12-27 | 2008-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-27 | 2011-12-27 | 2012-06-27 | $7700.00 | Window Closed / Lapsed |