Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
76 words
A ferroelectric memory comprising: a memory cell including a ferroelectric capacitor; a DA converter for applying a write analog voltage corresponding to any one of 3 or more digital values to a electrode of the ferroelectric capacitor to cause residual dielectric polarization to occur in the capacitor; and an AD conversion circuit for restoring to the original digital value based on a read analog voltage obtained in response to the residual dielectric polarization of the capacitor.
Claim 2
Dependent Claim
76 words
A ferroelectric memory comprising: a memory cell including a ferroelectric capacitor; a DA converter for applying a write analog voltage corresponding to any one of 3 or more digital values to a electrode of the ferroelectric capacitor to cause residual dielectric polarization to occur in the capacitor; and an AD conversion circuit for restoring to the original digital value based on a read analog voltage obtained in response to the residual dielectric polarization of the capacitor.
Claim 3
Dependent Claim
111 words
The ferroelectric memory according to claim 1, wherein the AD conversion circuit comprises: a plurality of reference memory cells each of which includes a ferroelectric capacitor; a DA conversion unit for applying a reference write analog voltage different from the write analog voltage to an electrode of the capacitor in each of the reference memory cells, to cause a residual dielectric polarization to occur in the capacitor; a comparison unit for comparing a reference read analog voltage obtained in response to the residual dielectric polarization value with the read analog voltage; and a restore unit for restoring to the original digital value based on the comparison result by the comparison unit.
Claim 4
Dependent Claim
31 words
The ferroelectric memory according to claim 2, wherein the DA conversion unit sets each of the reference write analog voltages to an intermediate value between each of the write analog voltages.
Claim 5
Dependent Claim
24 words
The ferroelectric memory according to claim 2, wherein the memory cell and the reference memory cells are formed in the same size and shape.
Claim 6
Dependent Claim
52 words
The ferroelectric memory according to claim 2, wherein the DA converter is connected to the memory cell by a bit line and the DA conversion unit in the AD conversion circuit is connected to the reference memory cells by reference bit lines, having the same capacitance as that of the bit line.
Claim 7
Dependent Claim
31 words
The ferroelectric memory according to claim 2, wherein the restore unit outputs error information when the original digital value cannot be restored based on the comparison result by the comparison unit.
Claim 8
Dependent Claim
28 words
The ferroelectric memory according to claim 2, further comprising a polarization initializing circuit for setting the residual dielectric polarization value of the ferroelectric capacitor to a predetermined value.
Claim 9
Dependent Claim
22 words
The ferroelectric memory according to claim 7, wherein the polarization initializing circuit sets the residual dielectric polarization value before a write operation.
Claim 10
Dependent Claim
25 words
The ferroelectric memory according to claim 2, further comprising a discharging circuit for discharging a charge stored in a parasitic capacitor of the ferroelectric capacitor.
Claim 11
Dependent Claim
28 words
The ferroelectric memory according to claim 9, wherein the discharging circuit discharges the charge stored in the parasitic capacitor after a write operation or before a read operation.
Claim 12
Dependent Claim
30 words
The ferroelectric memory according to claim 1, wherein an operation of rewriting data in the memory cell is performed by inputting the restored original digital value to the DA converter.