US6087701A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a cavity and method of making
Assignee: North Star Innovations Inc
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Filing: 1997-12-23
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Granted: 2000-07-11
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Expires: 2017-12-23
Abstract
Abstract A semiconductor device (50) has a sensing element (30) and a transistor (40). The sensing element (30) is formed in a cavity (11) in a substrate (10). The sensing element (30) is formed in part using an epitaxial deposition process that fills the cavity (11) with a conductive material (18) such as polysilicon. A dielectric layer (17) is used to electrically isolate the sensing element (30) from the substrate (10).
Inventors
- 👤 Paul L. Bergstrom
- 👤 Muh-Ling Ger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:12
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00222; B81C1/00246; B81C2203/00; B81C2203/07; B81C2203/0707; B81C2203/0735
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
101 words
A semiconductor device having a sensor, the sensor comprising: a substrate having a cavity and a surface, wherein the cavity exposes portions of the substrate made from an uniform material and has a side surface and a bottom surface, the side surface extending from the surface of the substrate to the bottom surface of the cavity; a layer of conductive material along at least a portion of the side surface of the cavity, the conductive material layer having a surface substantially planar to the surface of the substrate; and a sensing element that is at least partially disposed within the cavity.
Claim 2
Dependent Claim
101 words
A semiconductor device having a sensor, the sensor comprising: a substrate having a cavity and a surface, wherein the cavity exposes portions of the substrate made from an uniform material and has a side surface and a bottom surface, the side surface extending from the surface of the substrate to the bottom surface of the cavity; a layer of conductive material along at least a portion of the side surface of the cavity, the conductive material layer having a surface substantially planar to the surface of the substrate; and a sensing element that is at least partially disposed within the cavity.
Claim 3
Dependent Claim
25 words
The semiconductor device of claim 1 further comprising: a dielectric layer disposed in the cavity providing electrical isolation between the sensing element and the substrate.
Claim 4
Dependent Claim
24 words
The semiconductor device of claim 2 wherein the dielectric layer is between the side surface of the cavity and the layer of conductive material.
Claim 5
Dependent Claim
17 words
The semiconductor device of claim 1 wherein the layer of conductive material is disposed within the cavity.
Claim 6
Dependent Claim
14 words
The semiconductor device of claim 1 wherein the layer of conductive material comprises polysilicon.
Claim 7
Dependent Claim
17 words
The semiconductor device of claim 1 wherein the cavity has a depth of at least 1 micron.
Claim 8
Dependent Claim
17 words
The semiconductor device of claim 6 wherein the cavity has a depth of at least 4 microns.
Claim 9
Dependent Claim
63 words
A semiconductor device comprising: a substrate having a cavity, wherein the cavity has a side surface and a bottom surface; a layer of conductive material formed within the cavity and over the side surface of the cavity, the conductive material layer having a surface substantially planar to the surface of the substrate; and a sensing element at least partially disposed within the cavity.
Claim 10
Dependent Claim
63 words
A semiconductor device comprising: a substrate having a cavity, wherein the cavity has a side surface and a bottom surface; a layer of conductive material formed within the cavity and over the side surface of the cavity, the conductive material layer having a surface substantially planar to the surface of the substrate; and a sensing element at least partially disposed within the cavity.
Claim 11
Dependent Claim
41 words
The semiconductor device of claim 8 wherein the cavity is further defined by a side surface that defines a perimeter of the cavity, and the layer of conductive material is along at least a portion of the perimeter of the cavity.
Claim 12
Dependent Claim
45 words
The semiconductor device of claim 9 further comprising a layer of dielectric material along at least a portion of the side surface of the cavity, wherein the layer of dielectric material is between the side surface of the cavity and the layer of conductive material.
Claim 13
Dependent Claim
15 words
The semiconductor device of claim 9 wherein the side surface of the cavity is tapered.
Claim 14
Dependent Claim
17 words
The semiconductor device of claim 9 wherein the layer of conductive material is disposed within the cavity.
Claim 15
Dependent Claim
20 words
The semiconductor device of claim 12 wherein the layer of conductive material is along the entire perimeter of the cavity.
Claim 16
Dependent Claim
20 words
The semiconductor device of claim 8 wherein a majority of the cavity is filled with the layer of conductive material.
Claim 17
Dependent Claim
44 words
The semiconductor device of claim 8 wherein the substrate has a top surface, and the semiconductor device further comprises a transistor coupled to the sensing element and having a source region and a drain region that extend from the top surface of the substrate.
Claim 18
Dependent Claim
25 words
The semiconductor device of claim 15 wherein the sensing element has a top portion that is substantially planar with the top surface of the substrate.
Claim 19
Dependent Claim
90 words
A semiconductor device having a sensor, the sensor comprising: a substrate having a cavity, wherein the cavity has a first side surface, a second side surface, and a bottom surface, the bottom surface being between the first side surface and the second side surface; a layer of conductive material over at least a portion of the first side surface of the cavity, the conductive material layer having a surface substantially planar to the surface of the substrate; and a sensing element that is at least partially disposed within the cavity.
Claim 20
Dependent Claim
90 words
A semiconductor device having a sensor, the sensor comprising: a substrate having a cavity, wherein the cavity has a first side surface, a second side surface, and a bottom surface, the bottom surface being between the first side surface and the second side surface; a layer of conductive material over at least a portion of the first side surface of the cavity, the conductive material layer having a surface substantially planar to the surface of the substrate; and a sensing element that is at least partially disposed within the cavity.
Claim 21
Dependent Claim
19 words
The semiconductor device of claim 17 wherein the cavity exposes portions of the substrate made from an uniform material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |