Patent US6133563A successfully refreshed from Google Patents.
US6133563A
Expired / Lapsed
US
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Sensor cell having a soft saturation circuit
Assignee: Intel Corp
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Filing: 1997-09-29
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Granted: 2000-10-17
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Expires: 2017-09-29
Abstract
Abstract A method for providing an improved active pixel sensor cell having a soft-saturation circuit. The method includes providing a pixel node and a photodiode coupled to the pixel node. The photodiode receives light and converts the light into an electrical signal representative of light. A soft-saturation circuit for selectively affecting the electrical signal at the pixel node based on the electrical signal at the pixel node based on the electrical signal at the pixel node is also provided.
Inventors
- 👤 Lawrence T. Clark
- 👤 Mark A. Beiley
- 👤 Eric J. Hoffman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:23
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/80; H10F39/803; H04; H04N; H04N25/00; H04N25/50; H04N25/57; H04N25/571
Claims Analysis
Total Claims: 51
Claim 1
Independent Claim
67 words
A method comprising: a) provide a pixel node; b) providing a photodiode, coupled to the pixel node, for receiving incident lighting converting said incident light into an electrical signal, said electrical signal representative of said incident light; and c) providing a soft-saturation circuit, coupled to the pixel node, for selectively affecting the electrical signal at the pixel node based upon the electrical signal at the pixel node.
Claim 2
Independent Claim
67 words
A method comprising: a) provide a pixel node; b) providing a photodiode, coupled to the pixel node, for receiving incident lighting converting said incident light into an electrical signal, said electrical signal representative of said incident light; and c) providing a soft-saturation circuit, coupled to the pixel node, for selectively affecting the electrical signal at the pixel node based upon the electrical signal at the pixel node.
Claim 3
Dependent Claim
32 words
The method of claim 1, wherein the soft-saturation circuit affects the electrical signal in a non-linear manner when the electrical signal is in a first logical relationship with a predetermined signal value.
Claim 4
Dependent Claim
30 words
The method of claim 2, wherein the first logical relationship between the electrical signal and the predetermined signal value includes the electrical signal being greater than the predetermined signal value.
Claim 5
Dependent Claim
25 words
The method of claim 2, wherein said non-linear manner includes said soft-saturation cell affecting the electrical signal on the pixel node in a square-root fashion.
Claim 6
Dependent Claim
34 words
The method of claim 1, wherein the soft-saturation circuit does not affect the electrical signal on the pixel node when the electrical signal is in a second logical relationship with a predetermined signal value.
Claim 7
Dependent Claim
33 words
The method of claim 5, wherein the second logical relationship between the electrical signal and the predetermined signal value includes the electrical signal being less than or equal to the predetermined signal value.
Claim 8
Dependent Claim
18 words
The method of claim 2, wherein the predetermined value is approximately in the range of 2V to 0V.
Claim 9
Dependent Claim
18 words
The method of claim 5, wherein the predetermined value is approximately in the range of 3.3V to 2.0V.
Claim 10
Dependent Claim
73 words
The method of claim 2, wherein providing the soft-saturation circuit includes: a) providing a first transistor having a first electrode coupled to a pixel node, a second electrode coupled to the pixel node, and a third electrode; and b) providing a second transistor having a first electrode, coupled to a predetermined voltage, a second electrode coupled to the first electrode, and a third electrode coupled to the third electrode of the first transistor.
Claim 11
Dependent Claim
65 words
The method of claim 9, wherein the first transistor is a PMOS device, the first electrode, second electrode and third electrode of the first transistor are a drain electrode, gate electrode and source electrode, respectively the second transistor is an NMOS device; and the first electrode, second electrode, and third electrode of the second transistor are a drain electrode, gate electrode and source electrode, respectively.
Claim 12
Dependent Claim
46 words
The method of claim 1, further comprising: providing a readout circuit having a first electrode coupled to the pixel node, and a second electrode for receiving a readout signal, said readout circuit selectively providing an electrical signal on the pixel node based upon said readout signal.
Claim 13
Dependent Claim
77 words
The method of claim 11, wherein providing the readout circuit includes: a) providing a first transistor having a first electrode coupled to a predetermined voltage, a second electrode coupled to the pixel node, a third electrode; and b) providing a second transistor having a first electrode, coupled to the third electrode of the first transistor, a second electrode coupled to receive the readout signal, and a third electrode for providing the electrical signal on the pixel node.
Claim 14
Dependent Claim
65 words
The method of claim 12, wherein the first transistor is a PMOS device, the first electrode, second electrode and third electrode of the first transistor are a drain electrode, gate electrode and source electrode, respectively the second transistor is an NMOS device; and the first electrode, second electrode, and third electrode of the second transistor are a drain electrode, gate electrode and source electrode, respectively.
Claim 15
Dependent Claim
12 words
The method of claim 12, wherein the predetermined voltage is approximately 3.3V.
Claim 16
Dependent Claim
20 words
The method of claim 1, wherein the pixel sensor cell is manufactured with a Complimentary Metal Oxide Semi-conductor (CMOS) process.
Claim 17
Dependent Claim
66 words
An pixel sensor cell comprising: a) a pixel node; b) a photodiode, coupled to the pixel node, for receiving incident lighting converting said incident light into an electrical signal, said electrical signal representative of said incident light; and c) a soft-saturation circuit, coupled to the pixel node, for selectively affecting the electrical signal at the pixel node based upon the electrical signal at the pixel node.
Claim 18
Dependent Claim
66 words
An pixel sensor cell comprising: a) a pixel node; b) a photodiode, coupled to the pixel node, for receiving incident lighting converting said incident light into an electrical signal, said electrical signal representative of said incident light; and c) a soft-saturation circuit, coupled to the pixel node, for selectively affecting the electrical signal at the pixel node based upon the electrical signal at the pixel node.
Claim 19
Dependent Claim
34 words
The pixel sensor cell of claim 16 wherein the soft-saturation circuit affects the electrical signal in a non-linear manner when the electrical signal is in a first logical relationship with a predetermined signal value.
Claim 20
Dependent Claim
32 words
The pixel sensor cell of claim 17 wherein the first logical relationship between the electrical signal and the predetermined signal value includes the electrical signal being greater than the predetermined signal value.
Claim 21
Dependent Claim
27 words
The pixel sensor cell of claim 17 wherein said non-linear manner includes said soft-saturation cell affecting the electrical signal on the pixel node in a square-root fashion.
Claim 22
Dependent Claim
36 words
The pixel sensor cell of claim 16 wherein the soft-saturation circuit does not effect the electrical signal on the pixel node when the electrical signal is in a second logical relationship with a predetermined signal value.
Claim 23
Dependent Claim
35 words
The pixel sensor cell of claim 20 wherein the second logical relationship between the electrical signal and the predetermined signal value includes the electrical signal being less than or equal to the predetermined signal value.
Claim 24
Dependent Claim
20 words
The pixel sensor cell of claim 17 wherein the predetermined value is approximately in the range of 2V to 0V.
Claim 25
Dependent Claim
20 words
The pixel sensor cell of claim 20 wherein the predetermined value is approximately in the range of 3.3V to 2.0V.
Claim 26
Dependent Claim
72 words
The pixel sensor cell of claim 17 wherein the soft-saturation circuit includes: a) a first transistor having a first electrode coupled to a pixel node, a second electrode coupled to the pixel node, and a third electrode; and b) a second transistor having a first electrode, coupled to a predetermined voltage, a second electrode coupled to the first electrode, and a third electrode coupled to the third electrode of the first transistor.
Claim 27
Dependent Claim
67 words
The pixel sensor cell of claim 24 wherein the first transistor is a PMOS device, the first electrode, second electrode and third electrode of the first transistor are a drain electrode, gate electrode and source electrode, respectively the second transistor is an NMOS device; and the first electrode, second electrode, and third electrode of the second transistor are a drain electrode, gate electrode and source electrode, respectively.
Claim 28
Dependent Claim
47 words
The pixel sensor cell of claim 16 further comprising: a readout circuit having a first electrode coupled to the pixel node, and a second electrode for receiving a readout signal, said readout circuit selectively providing an electrical signal on the pixel node based upon said readout signal.
Claim 29
Dependent Claim
76 words
The pixel sensor cell of claim 26 wherein the readout circuit includes: a) a first transistor having a first electrode coupled to a predetermined voltage, a second electrode coupled to the pixel node, a third electrode; and b) a second transistor having a first electrode, coupled to the third electrode of the first transistor, a second electrode coupled to receive the readout signal, and a third electrode for providing the electrical signal on the pixel node.
Claim 30
Dependent Claim
67 words
The pixel sensor cell of claim 27 wherein the first transistor is a PMOS device, the first electrode, second electrode and third electrode of the first transistor are a drain electrode, gate electrode and source electrode, respectively the second transistor is an NMOS device; and the first electrode, second electrode, and third electrode of the second transistor are a drain electrode, gate electrode and source electrode, respectively.
Claim 31
Dependent Claim
14 words
The pixel sensor cell of claim 27 wherein the predetermined voltage is approximately 3.3V.
Claim 32
Dependent Claim
22 words
The pixel sensor cell of claim 16 wherein the pixel sensor cell is manufactured with a Complimentary Metal Oxide Semi-conductor (CMOS) process.
Claim 33
Dependent Claim
112 words
An integrated image sensor circuit comprising: a) an imaging array having a plurality of pixel cells arranged in rows and columns, each pixel cell including a pixel node, a photodiode, coupled to the pixel node, for receiving incident lighting for converting said incident light into an electrical signal and for providing the electrical signal, said electrical signal representative of said incident light, and a soft-saturation circuit, coupled to the pixel node, for selectively affecting the electrical signal at the pixel node based upon the electrical signal at the pixel node; and b) a signal processor, coupled to the imaging array, for processing the electrical signal and for providing the processed electrical signal.
Claim 34
Dependent Claim
112 words
An integrated image sensor circuit comprising: a) an imaging array having a plurality of pixel cells arranged in rows and columns, each pixel cell including a pixel node, a photodiode, coupled to the pixel node, for receiving incident lighting for converting said incident light into an electrical signal and for providing the electrical signal, said electrical signal representative of said incident light, and a soft-saturation circuit, coupled to the pixel node, for selectively affecting the electrical signal at the pixel node based upon the electrical signal at the pixel node; and b) a signal processor, coupled to the imaging array, for processing the electrical signal and for providing the processed electrical signal.
Claim 35
Dependent Claim
35 words
The integrated image sensor circuit of claim 31 wherein the soft-saturation circuit affects the electrical signal in a non-linear manner when the electrical signal is in a first logical relationship with a predetermined signal value.
Claim 36
Dependent Claim
33 words
The integrated image sensor circuit of claim 32 wherein the first logical relationship between the electrical signal and the predetermined signal value includes the electrical signal being greater than the predetermined signal value.
Claim 37
Dependent Claim
28 words
The integrated image sensor circuit of claim 32 wherein said non-linear manner includes said soft-saturation cell affecting the electrical signal on the pixel node in a square-root fashion.
Claim 38
Dependent Claim
37 words
The integrated image sensor circuit of claim 31 wherein the soft-saturation circuit does not effect the electrical signal on the pixel node when the electrical signal is in a second logical relationship with a predetermined signal value.
Claim 39
Dependent Claim
36 words
The integrated image sensor circuit of claim 35 wherein the second logical relationship between the electrical signal and the predetermined signal value includes the electrical signal being less than or equal to the predetermined signal value.
Claim 40
Dependent Claim
21 words
The integrated image sensor circuit of claim 32 wherein the predetermined value is approximately in the range of 2V to 0V.
Claim 41
Dependent Claim
21 words
The integrated image sensor circuit of claim 35 wherein the predetermined value is approximately in the range of 3.3V to 2.0V.
Claim 42
Dependent Claim
70 words
The integrated image sensor circuit of claim 31 further comprising: a) a first transistor having a first electrode coupled to a pixel node, a second electrode coupled to the pixel node, and a third electrode; and b) a second transistor having a first electrode, coupled to a predetermined voltage, a second electrode coupled to the first electrode, and a third electrode coupled to the third electrode of the first transistor.
Claim 43
Dependent Claim
68 words
The integrated image sensor circuit of claim 39 wherein the first transistor is a PMOS device, the first electrode, second electrode and third electrode of the first transistor are a drain electrode, gate electrode and source electrode, respectively the second transistor is an NMOS device; and the first electrode, second electrode, and third electrode of the second transistor are a drain electrode, gate electrode and source electrode, respectively.
Claim 44
Dependent Claim
48 words
The integrated image sensor circuit of claim 31 further comprising: a readout circuit having a first electrode coupled to the pixel node, and a second electrode for receiving a readout signal, said readout circuit selectively providing an electrical signal on the pixel node based upon said readout signal.
Claim 45
Dependent Claim
77 words
The integrated image sensor circuit of claim 41 wherein the readout circuit includes: a) a first transistor having a first electrode coupled to a predetermined voltage, a second electrode coupled to the pixel node, a third electrode; and b) a second transistor having a first electrode, coupled to the third electrode of the first transistor, a second electrode coupled to receive the readout signal, and a third electrode for providing the electrical signal on the pixel node.
Claim 46
Dependent Claim
68 words
The integrated image sensor circuit of claim 42 wherein the first transistor is a PMOS device, the first electrode, second electrode and third electrode of the first transistor are a drain electrode, gate electrode and source electrode, respectively the second transistor is an NMOS device; and the first electrode, second electrode, and third electrode of the second transistor are a drain electrode, gate electrode and source electrode, respectively.
Claim 47
Dependent Claim
15 words
The integrated image sensor circuit of claim 42 wherein the predetermined voltage is approximately 3.3V.
Claim 48
Dependent Claim
23 words
The integrated image sensor circuit of claim 31 wherein the pixel sensor cell is manufactured with a Complimentary Metal Oxide Semi-conductor (CMOS) process.
Claim 49
Dependent Claim
37 words
The integrated image sensor circuit of claim 31 further comprising a serial interface, coupled to the sequencer, said serial interface including a plurality of programmable registers, said registers programmable by said external agent through a serial bus.
Claim 50
Dependent Claim
37 words
The integrated image sensor circuit of claim 31 further comprising a power management circuit, coupled to the serial interface and the sequencer for managing a normal operating mode and a low power operating mode for the sensor.
Claim 51
Dependent Claim
34 words
The integrated image sensor circuit of claim 31 further comprising a sequencer, coupled to the imaging array and signal processor, for synchronizing the sensor with an external circuit and for controlling said imaging array.
References Cited (Backward Citations)
US5471515A
Cited
US5572074A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-17 | 2004-04-17 | 2004-10-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-17 | 2008-04-17 | 2008-10-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-17 | 2012-04-17 | 2012-10-17 | $7700.00 | Window Closed / Lapsed |