Patent US6239472B1 successfully refreshed from Google Patents.
US6239472B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
MOSFET structure having improved source/drain junction performance
Assignee: NXP BV
•
Filing: 1998-09-01
•
Granted: 2001-05-29
•
Expires: 2018-09-01
Abstract
Abstract A MOSFET structure having substantially reduced parasitic junction capacitance, relaxed thermal budget constraints and resiliency to hot carrier damage is disclosed. The MOSFET structure includes a gate stack that is disposed over a gate oxide that is in turn disposed over an active region of a substrate. A pair of shallow trenches are defined on either side of the gate stack, and an intrinsic silicon material is disposed within the pair of shallow trenches up to a top surface of the gate stack. The MOSFET structure further includes source and drain implanted impurities that are defined in an upper portion of the intrinsic silicon material. The upper portion is configured to extend down into the intrinsic silicon material to a target diffusion level that is just below the gate oxide of the gate stack.
Inventors
- 👤 Jayarama N. Shenoy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 23:32
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0217; H10D30/027; H10D30/0275; H10D62/00; H10D62/01; H10D62/021; H10D62/10; H10D62/113; H10D62/115; H10D62/116
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
173 words
A semiconductor transistor structure defined on a substrate having an active region that is isolated by shallow trench isolation oxide, the semiconductor transistor structure comprises: a gate stack of the semiconductor transistor structure being disposed over a gate oxide that is in turn disposed over the active region of the substrate; a pair of shallow trenches defined on either side of the gate stack; an intrinsic silicon material being disposed within the pair of shallow trenches up to a top surface of the gate stack and the shallow trench isolation oxide; source and drain implanted impurities being defined in an upper portion of the intrinsic silicon material, the upper portion is configured to extend down into the intrinsic silicon material to a target diffusion level that is just below the gate oxide of the gate stack; pocket implant regions; and lightly doped drain (LDD) regions; wherein portions of the pocket implant regions and the LDD regions are defined between the intrinsic silicon material and slightly under the gate oxide of the gate stack.
Claim 2
Dependent Claim
173 words
A semiconductor transistor structure defined on a substrate having an active region that is isolated by shallow trench isolation oxide, the semiconductor transistor structure comprises: a gate stack of the semiconductor transistor structure being disposed over a gate oxide that is in turn disposed over the active region of the substrate; a pair of shallow trenches defined on either side of the gate stack; an intrinsic silicon material being disposed within the pair of shallow trenches up to a top surface of the gate stack and the shallow trench isolation oxide; source and drain implanted impurities being defined in an upper portion of the intrinsic silicon material, the upper portion is configured to extend down into the intrinsic silicon material to a target diffusion level that is just below the gate oxide of the gate stack; pocket implant regions; and lightly doped drain (LDD) regions; wherein portions of the pocket implant regions and the LDD regions are defined between the intrinsic silicon material and slightly under the gate oxide of the gate stack.
Claim 3
Dependent Claim
35 words
A semiconductor transistor structure as recited in claim 1 , wherein target diffusion level that is just below the gate oxide of the gate stack is in contact with the portions of the LDD regions.
Claim 4
Dependent Claim
25 words
A semiconductor transistor structure as recited in claim 1 , wherein the gate stack includes: a polysilicon portion; a thin pad oxide; and oxide sidewalls.
Claim 5
Dependent Claim
33 words
A semiconductor transistor structure as recited in claim 1 , wherein the source and drain implanted impurities that are defined in the upper portion of the intrinsic silicon material define raised source/drain structures.
Claim 6
Dependent Claim
38 words
A semiconductor transistor structure as recited in claim 1 , wherein the pair of shallow trenches that are defined on either side of the gate stack have a depth of between about 1,000 angstroms and about 6,000 angstroms.
Claim 7
Dependent Claim
32 words
A semiconductor transistor structure as recited in claim 1 , wherein the intrinsic silicon material has an impurity concentration that is less than or equal to about 1×10 13 atoms/cm 3 .
Claim 8
Dependent Claim
33 words
A semiconductor transistor structure as recited in claim 3 , wherein the source and drain implanted impurities are also defined in the thin pad oxide and the polysilicon portion of the gate stack.
Claim 9
Dependent Claim
29 words
A semiconductor transistor structure as recited in claim 1 , wherein the intrinsic silicon material is configured to substantially reduce a parasitic junction capacitance of the semiconductor transistor structure.
Claim 10
Dependent Claim
32 words
A semiconductor transistor structure as recited in claim 1 , wherein the intrinsic silicon material is configured to reduce punch-through of the source and drain implanted impurities and reduce hot carrier damage.
Claim 11
Dependent Claim
27 words
A semiconductor transistor structure as recited in claim 1 , wherein the intrinsic silicon material is configured to relax thermal budget requirements of the semiconductor transistor structure.
Claim 12
Dependent Claim
146 words
A MOSFET structure, comprising: a gate stack of the MOSFET structure being disposed over a gate oxide that is in turn disposed over an active region of a substrate; a pair of shallow trenches defined on either side of the gate stack; an intrinsic silicon material being disposed within the pair of shallow trenches up to a top surface of the gate stack; source and drain implanted impurities being defined in an upper portion of the intrinsic silicon material, the upper portion is configured to extend down into the intrinsic silicon material to a target diffusion level that is just below the gate oxide of the gate stack; pocket implant regions; and lightly doped drain (LDD) regions; wherein portions of the pocket implant regions and the LDD regions are defined between the intrinsic silicon material and are slightly under the gate oxide of the gate stack.
Claim 13
Dependent Claim
146 words
A MOSFET structure, comprising: a gate stack of the MOSFET structure being disposed over a gate oxide that is in turn disposed over an active region of a substrate; a pair of shallow trenches defined on either side of the gate stack; an intrinsic silicon material being disposed within the pair of shallow trenches up to a top surface of the gate stack; source and drain implanted impurities being defined in an upper portion of the intrinsic silicon material, the upper portion is configured to extend down into the intrinsic silicon material to a target diffusion level that is just below the gate oxide of the gate stack; pocket implant regions; and lightly doped drain (LDD) regions; wherein portions of the pocket implant regions and the LDD regions are defined between the intrinsic silicon material and are slightly under the gate oxide of the gate stack.
Claim 14
Dependent Claim
27 words
A MOSFET structure as recited in claim 11 , wherein the intrinsic silicon material is configured to substantially reduce a parasitic junction capacitance of the MOSFET structure.
Claim 15
Dependent Claim
31 words
A MOSFET structure as recited in claim 11 , wherein the intrinsic silicon material has an impurity concentration that is less than or equal to about 1×10 14 atoms/cm 3 .
Claim 16
Dependent Claim
37 words
A MOSFET structure as recited in claim 11 , wherein the pair of shallow trenches that are defined on either side of the gate stack have a depth of between about 1,000 angstroms and about 6,000 angstroms.
Claim 17
Dependent Claim
37 words
A MOSFET structure as recited in claim 11 , wherein the pair of shallow trenches that are defined on either side of the gate stack have a depth of between about 2,000 angstroms and about 4,000 angstroms.
Claim 18
Dependent Claim
33 words
A MOSFET structure as recited in claim 11 , wherein the intrinsic silicon material is configured to assist in reducing punch-through of the source and drain implanted impurities and reduce hot carrier damage.
Claim 19
Dependent Claim
39 words
A MOSFET structure as recited in claim 11 , wherein the intrinsic silicon material is configured to relax thermal budget requirements of the MOSFET structure by extending the source and drain implanted impurities down to the target diffusion level.
Claim 20
Dependent Claim
22 words
A MOSFET structure as recited in claim 12 , wherein the MOSFET structure is integrated in input/output circuits to increase switching speeds.
Claim 21
Dependent Claim
20 words
A MOSFET structure as recited in claim 18 , wherein the input/output circuits include electrostatic discharge (ESD) protection input circuits.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-28 | 2004-11-27 | 2005-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-28 | 2008-11-27 | 2009-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-28 | 2012-11-27 | 2013-05-29 | $7700.00 | Window Closed / Lapsed |