US6258656B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capacitor with high-ε dielectric or ferroelectric material based on the fin stack principle and production process using a negative mold
Assignee: Siemens AG
•
Filing: 1999-09-13
•
Granted: 2001-07-10
•
Expires: 2019-09-13
Abstract
Abstract A capacitor on a semiconductor configuration is formed with a high-ε dielectric or a ferroelectric material. A first noble-metal-containing storage electrode has a plurality of horizontal lamellae connected to one another via a support structure. The support structure is arranged on one or preferably two opposite external flanks of the lamellae. During production, firstly (inter alia by deposition of a sequence of layers with an alternating low and high etching rate) a fin stack negative mold, in particular made from p + -polysilicon, is formed, which is then filled conformally with the electrode material.
Inventors
- 👤 Gerrit Lange
- 👤 Till Schlösser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 00:01
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10B12/318; H10D1/00; H10D1/01; H10D1/041; H10D1/043; H10D1/60; H10D1/68; H10D1/692; H10D1/711; H10D1/714
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
277 words
A process for producing a capacitor in a semiconductor configuration on a substrate, which comprises: forming a sequence of layers on a substrate, the sequence alternately comprising a layer of a first material and a layer of a second material, wherein the first material is selectively etchable with respect to the second material; etching the sequence of layers to form a layer structure with flanks; forming a first auxiliary structure of a first auxiliary material covering at least one flank of the layer structure, wherein the first auxiliary structure is selectively etchable with respect to the second material; forming a second auxiliary structure covering at least one other flank of the layer structure and mechanically connecting the layers of the second material; covering a substrate surface surrounding the layer structure with a filler layer up to a top edge of the layer structure; removing the layers of the first material and the first auxiliary structure selectively with respect to the layers of the second material and with respect to the second auxiliary structure; filling a cavity formed in the removing step with a noble-metal-containing electrode material and forming a first electrode with lamellae in the cavity formed by the layers made from the first material and with a support structure connecting the lamellae in the cavity formed by the first auxiliary structure; removing the layers of the second material and the second auxiliary structure selectively with respect to the electrode material; conformally applying a capacitor dielectric of a material selected from the group consisting of high-ε dielectric and ferroelectric material to an exposed surface of the first electrode; and forming a second electrode on the capacitor dielectric.
Claim 2
Dependent Claim
277 words
A process for producing a capacitor in a semiconductor configuration on a substrate, which comprises: forming a sequence of layers on a substrate, the sequence alternately comprising a layer of a first material and a layer of a second material, wherein the first material is selectively etchable with respect to the second material; etching the sequence of layers to form a layer structure with flanks; forming a first auxiliary structure of a first auxiliary material covering at least one flank of the layer structure, wherein the first auxiliary structure is selectively etchable with respect to the second material; forming a second auxiliary structure covering at least one other flank of the layer structure and mechanically connecting the layers of the second material; covering a substrate surface surrounding the layer structure with a filler layer up to a top edge of the layer structure; removing the layers of the first material and the first auxiliary structure selectively with respect to the layers of the second material and with respect to the second auxiliary structure; filling a cavity formed in the removing step with a noble-metal-containing electrode material and forming a first electrode with lamellae in the cavity formed by the layers made from the first material and with a support structure connecting the lamellae in the cavity formed by the first auxiliary structure; removing the layers of the second material and the second auxiliary structure selectively with respect to the electrode material; conformally applying a capacitor dielectric of a material selected from the group consisting of high-ε dielectric and ferroelectric material to an exposed surface of the first electrode; and forming a second electrode on the capacitor dielectric.
Claim 3
Dependent Claim
38 words
The production process according to claim 1 , which comprises selecting the first material from the group of materials consisting of undoped, n-doped, and p − -doped polysilicon, and selecting p + -doped polysilicon as the second material.
Claim 4
Dependent Claim
37 words
The production process according to claim 1 , wherein the step of forming the first auxiliary structure comprises forming the first auxiliary structure on two flanks of the layer structure opposite one another in a first direction.
Claim 5
Dependent Claim
37 words
The production process according to claim 3 , wherein the step of forming the second auxiliary structure comprises forming the second auxiliary structure on two flanks of the layer structure opposite one another in a second direction.
Claim 6
Dependent Claim
34 words
The production process according to claim 2 , wherein at least one of the steps of forming the first auxiliary structure and forming the second auxiliary structure comprises a step of selective silicon deposition.
Claim 7
Dependent Claim
30 words
The production process according to claim 2 , wherein the step of forming the second auxiliary structure comprises inclined implantation with p-doping ions into the flank of the layer structure.
Claim 8
Dependent Claim
33 words
The production process according to claim 1 , which further comprises, subsequently to filling the cavity with the electrode material, removing the electrode material deposited on the filler layer with a CMP process.
Claim 9
Dependent Claim
34 words
The production process according to claim 1 , which comprises, subsequently to forming the first electrode, removing the filler layer selectively with respect to the electrode material and with respect to the substrate surface.
Claim 10
Dependent Claim
54 words
The production process according to claim 1 , which comprises providing the substrate with an insulating layer on a surface facing toward the sequence of layers and forming the sequence of layers on the insulating layer, wherein the insulating layer has a contact arranged therein comprising a diffusion barrier connected to the first electrode.
Claim 11
Dependent Claim
103 words
The production process according to claim 1 , which comprises producing a multiplicity of capacitors in a linear arrangement along a second direction on the substrate, and thereby structuring the sequence of layers to strip-shaped layer structures running in the second direction, with the first auxiliary structures formed on the flanks of the structures; structuring the strip-like layer structures, together with the first auxiliary structures, to form a multiplicity of island-like layer structures; forming the second auxiliary structures on the flanks of each island opposite one another in the second direction; and filling an entire space between the islands with the filler layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-07-09 | 2005-01-08 | 2005-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-07-09 | 2009-01-08 | 2009-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-07-09 | 2013-01-08 | 2013-07-10 | $7700.00 | Window Closed / Lapsed |