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US6339281B2
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Method for fabricating triode-structure carbon nanotube field emitter array
Assignee: Samsung SDI Co Ltd
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Filing: 2001-01-05
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Granted: 2002-01-15
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Expires: 2021-01-05
Abstract
Abstract A method for fabricating a triode field emitter array using carbon nanotubes having excellent electron emission characteristics is provided. In the method for fabricating a triode-structure carbon nanotube field emitter array, a catalyst layer is formed on a cathode electrode without forming a base layer, and carbon nanotubes are grown on the catalyst layer using a Spind't process. In this method, a non-reactive layer is formed on a catalyst layer outside the micro-cavity such that the carbon nanotubes can be grown only on the catalyst within the micro-cavity. Accordingly, even through a separation layer is etched and removed, since carbon nanotubes do not exist outside the micro-cavity, it does not happen that carbon nanotubes are drifted into the micro-cavities. Therefore, the fabrication yield is increased, and the fabrication cost is decreased.
Inventors
- 👤 Hang-woo Lee
- 👤 Nae-sung Lee
- 👤 Yong-soo Choi
- 👤 Jong-min Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:43
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/304; B; B82; B82Y; B82Y10/00; H01J9/00; H01J9/02; H01J9/022; H01J9/025; C; C01; C01B; C01B32/00; C01B32/05; H01J1/3042; B82Y40/00; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30446; H01J2201/30453; H01J2201/30469; Y; Y10; Y10S; Y10S977/00; Y10S977/84; Y10S977/842
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
141 words
A method for fabricating a triode-structure carbon nanotube field emitter array, the method comprising the steps of: (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the opening is formed in the gate insulation layer; (b) forming a catalyst layer on the cathode electrode within the micro-cavity, the catalyst layer acting as a catalyst in growing carbon nanotubes; (c) performing slant deposition on the catalyst layer, thereby forming a non-reactive layer for preventing carbon nanotubes from growing on the catalyst layer outside the micro-cavity; (d) growing carbon nanotubes on the catalyst layer within the micro-cavity; and (e) removing the separation layer.
Claim 2
Independent Claim
141 words
A method for fabricating a triode-structure carbon nanotube field emitter array, the method comprising the steps of: (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the opening is formed in the gate insulation layer; (b) forming a catalyst layer on the cathode electrode within the micro-cavity, the catalyst layer acting as a catalyst in growing carbon nanotubes; (c) performing slant deposition on the catalyst layer, thereby forming a non-reactive layer for preventing carbon nanotubes from growing on the catalyst layer outside the micro-cavity; (d) growing carbon nanotubes on the catalyst layer within the micro-cavity; and (e) removing the separation layer.
Claim 3
Dependent Claim
42 words
The method of claim 1 , wherein in the step (a), the gate insulation layer is formed by depositing SiO 2 or Si 3 N 4 to a thickness of 5-10 μm, and the diameter of the gate opening is 5-10 μm.
Claim 4
Dependent Claim
21 words
The method of claim 1 , wherein in the step (b), the catalyst layer is formed by depositing Ni or Co.
Claim 5
Dependent Claim
33 words
The method of claim 1 , wherein in the step (c), the non-reactive layer is formed of at least one material selected from the group consisting of Cr, W, Al, Mo and Si.
Claim 6
Dependent Claim
27 words
The method of claim 1 , wherein in the step (d), the carbon nanotubes are grown by an arc discharge method or a chemical vapor deposition method.
Claim 7
Independent Claim
163 words
A method for fabricating a triode-structure carbon nanotube field emitter array, the method comprising the steps of: (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the gate opening is formed in the gate insulation layer; (b) performing slant deposition on the cathode electrode within the micro-cavity, thereby forming a base layer having a truncated cone shape within the micro-cavity; (c) forming a catalyst layer on the base layer; the catalyst layer acting as a catalyst in growing carbon nanotubes; (d) performing slant deposition on the catalyst layer, thereby forming a non-reactive layer for preventing carbon nanotubes from growing on the catalyst layer outside the micro-cavity; (e) growing carbon nanotubes on the catalyst layer within the micro-cavity; and (f) removing the separation layer.
Claim 8
Independent Claim
163 words
A method for fabricating a triode-structure carbon nanotube field emitter array, the method comprising the steps of: (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the gate opening is formed in the gate insulation layer; (b) performing slant deposition on the cathode electrode within the micro-cavity, thereby forming a base layer having a truncated cone shape within the micro-cavity; (c) forming a catalyst layer on the base layer; the catalyst layer acting as a catalyst in growing carbon nanotubes; (d) performing slant deposition on the catalyst layer, thereby forming a non-reactive layer for preventing carbon nanotubes from growing on the catalyst layer outside the micro-cavity; (e) growing carbon nanotubes on the catalyst layer within the micro-cavity; and (f) removing the separation layer.
Claim 9
Dependent Claim
42 words
The method of claim 6 , wherein in the step (a), the gate insulation layer is formed by depositing SiO 2 or Si 3 N 4 to a thickness of 5-10 μm, and the diameter of the gate opening is 5-10 μm.
Claim 10
Dependent Claim
30 words
The method of claim 6 , wherein the step (b), the base layer is formed of at least one material selected from the group consisting of Au, Pt and Nb.
Claim 11
Dependent Claim
21 words
The method of claim 6 , wherein in the step (c), the catalyst layer is formed by depositing Ni or Co.
Claim 12
Dependent Claim
33 words
The method of claim 6 , wherein in the step (d), the non-reactive layer is formed of at least one material selected from the group consisting of Cr, W, Al, Mo and Si.
Claim 13
Dependent Claim
27 words
The method of claim 6 , wherein in the step (e), the carbon nanotubes are grown by an arc discharge method or a chemical vapor deposition method.
Claim 14
Independent Claim
129 words
A method for fabricating a triode-structure carbon nanotube field emitter array, the method comprising the steps of: (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the gate opening is formed in the gate insulation layer; (b) forming a catalyst layer on the separation layer and the cathode electrode within the micro-cavity, the catalyst layer acting as a catalyst in growing carbon nanotubes; (c) removing the separation layer to remove the catalyst layer on the separation layer; and (d) growing carbon nanotubes on the catalyst layer within the micro-cavity.
Claim 15
Independent Claim
129 words
A method for fabricating a triode-structure carbon nanotube field emitter array, the method comprising the steps of: (a) forming a separation layer on a gate electrode using slant deposition in a structure in which a cathode electrode, a gate insulation layer and the gate electrode are sequentially formed on a cathode glass substrate, a gate opening is formed on the gate electrode, a micro-cavity corresponding to the gate opening is formed in the gate insulation layer; (b) forming a catalyst layer on the separation layer and the cathode electrode within the micro-cavity, the catalyst layer acting as a catalyst in growing carbon nanotubes; (c) removing the separation layer to remove the catalyst layer on the separation layer; and (d) growing carbon nanotubes on the catalyst layer within the micro-cavity.
Claim 16
Dependent Claim
42 words
The method of claim 12 , wherein in the step (a), the gate insulation layer is formed by depositing SiO 2 or Si 3 N 4 to a thickness of 5-10 μm, and the diameter of the gate opening is 5-10 μm.
Claim 17
Dependent Claim
21 words
The method of claim 12 , wherein in the step (b), the catalyst layer is formed by depositing Ni or Co.
Claim 18
Dependent Claim
27 words
The method of claim 12 , wherein in the step (d), the carbon nanotubes are grown by an arc discharge method or a chemical vapor deposition method.
References Cited (Backward Citations)
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