Patent US6503829B2 successfully refreshed from Google Patents.
US6503829B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metal via contact of a semiconductor device and method for fabricating the same
Assignee: Samsung Electronics Co Ltd
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Filing: 2001-03-21
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Granted: 2003-01-07
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Expires: 2021-03-21
Abstract
Abstract A metal via contact of a semiconductor device and a method for fabricating the same, wherein the method includes sequentially forming a first insulating layer, a low dielectric SOG (Spin On Glass) layer, a second insulating layer and a silicon oxynitride (SiON) layer on a semiconductor substrate forming a photoresist pattern, using the photoresist pattern as an etching mask and wet etching the silicon oxynitride layer and a portion of the second insulating layer, using the same photoresist pattern as an etching mask and anisotropically etching remainder second insulating layer, the low dielectric SOG layer and the first insulating layer to form a via hole exposing a predetermined portion of the semiconductor substrate, removing the photoresist pattern, using radio frequency (RF) etching to remove a reverse slope of the via hole and forming a metal plug in the via hole.
Inventors
- 👤 Won-Jin Kim
- 👤 Seong-Ho Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:28
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
135 words
A method for fabricating a semiconductor device, the method comprising: sequentially forming a first insulating layer, a low dielectric SOG (Spin On Glass) layer, a second insulating layer and a silicon oxynitride (SiON) layer on a semiconductor substrate; forming a photoresist pattern; using the photoresist pattern as an etching mask and wet etching the silicon oxynitride layer and a portion of the second insulating layer; using the same photoresist pattern as an etching mask and anisotropically etching a remaining portion of the second insulating layer, the low dielectric SOG layer and the first insulating layer to form a via hole exposing a predetermined portion of the semiconductor substrate; removing the photoresist pattern; using radio frequency (RF) etching to remove a reverse slope of the via hole; and forming a metal plug in the via hole.
Claim 2
Independent Claim
135 words
A method for fabricating a semiconductor device, the method comprising: sequentially forming a first insulating layer, a low dielectric SOG (Spin On Glass) layer, a second insulating layer and a silicon oxynitride (SiON) layer on a semiconductor substrate; forming a photoresist pattern; using the photoresist pattern as an etching mask and wet etching the silicon oxynitride layer and a portion of the second insulating layer; using the same photoresist pattern as an etching mask and anisotropically etching a remaining portion of the second insulating layer, the low dielectric SOG layer and the first insulating layer to form a via hole exposing a predetermined portion of the semiconductor substrate; removing the photoresist pattern; using radio frequency (RF) etching to remove a reverse slope of the via hole; and forming a metal plug in the via hole.
Claim 3
Dependent Claim
32 words
The method according to claim 1 , wherein removing the photoresist pattern is carried out by a process selected from the group consisting of ashing and a combination of ashing and stripping.
Claim 4
Dependent Claim
21 words
The method according to claim 1 , wherein radio frequency (RF) etching continues until the silicon oxynitride layer is completely removed.
Claim 5
Dependent Claim
18 words
The method according to claim 1 , wherein forming the metal plug comprises sputtering and heat reflow techniques.
Claim 6
Dependent Claim
17 words
The method according to claim 4 , wherein the sputtering technique uses aluminium as a sputtering source.
Claim 7
Dependent Claim
37 words
The method according to claim 4 , wherein radio frequency (RF) etching is carried out in a sputtering apparatus for the metal plug, thereby providing an in-situ process for the radio frequency etching and the metal plug.
Claim 8
Dependent Claim
31 words
The method according to claim 1 , wherein radio frequency (RF) etching is carried out so as not to enlarge a top width of the via hole beyond an undercut portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-01-06 | 2006-07-08 | 2007-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-01-06 | 2010-07-08 | 2011-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-01-06 | 2014-07-08 | 2015-01-07 | $7700.00 | Window Closed / Lapsed |