US6515888B2
Expired / Lapsed
US
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Low cost three-dimensional memory array
Assignee: SanDisk Technologies LLC
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Filing: 2001-08-13
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Granted: 2003-02-04
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Expires: 2021-08-13
Abstract
Abstract A low-cost memory cell array includes multiple, vertically-stacked layers of memory cells. In one form, each memory cell is characterized by a small cross-sectional area and a read current less than 6.3 microamperes. The resulting memory array has a slow access time and is well-suited for digital media storage, where access time requirements are low and the dramatic cost reductions associated with the disclosed memory arrays are particularly attractive. In another form, each memory cell includes an antifuse layer and diode components, wherein at least one diode component is heavily doped (to a dopant concentration greater than 1019/cm3), and wherein the read current is large (up to 500 mA).
Inventors
- 👤 Mark G. Johnson
- 👤 Thomas H. Lee
- 👤 Vivek Subramanian
- 👤 P. Michael Farmwald
- 👤 N. Johan Knall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:29
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/14; G11C17/16; H; H10; H10B; H10B20/00; H10B20/20; H10D; H10D88/00
Claims Analysis
Total Claims: 92
Claim 1
Independent Claim
43 words
A 3-dimensional memory array comprising a plurality of vertically-stacked layers of memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached.
Claim 2
Dependent Claim
43 words
A 3-dimensional memory array comprising a plurality of vertically-stacked layers of memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached.
Claim 3
Dependent Claim
20 words
The invention of claim 1 wherein said memory cells are characterized by a read voltage no greater than 2 volts.
Claim 4
Dependent Claim
48 words
The invention of claim 2 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 5
Dependent Claim
13 words
The invention of claim 1 wherein each memory cell comprises exactly two terminals.
Claim 6
Dependent Claim
48 words
The invention of claim 4 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 7
Dependent Claim
36 words
The invention of claim 1 wherein the memory array comprises a plurality of wires comprising wordlines and bitlines, and wherein each memory cell is connected to exactly two wires: the respective wordline and the respective bitline.
Claim 8
Dependent Claim
49 words
The invention of claim 6 , wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 9
Dependent Claim
13 words
The invention of claim 1 wherein the memory cells comprise a semiconductor material.
Claim 10
Dependent Claim
48 words
The invention of claim 8 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 11
Dependent Claim
13 words
The invention of claim 1 wherein the memory cells comprise an organic polymer.
Claim 12
Dependent Claim
49 words
The invention of claim 10 , wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 13
Dependent Claim
14 words
The invention of claim 1 wherein the memory cells comprise a phase change material.
Claim 14
Dependent Claim
48 words
The invention of claim 12 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 15
Dependent Claim
13 words
The invention of claim 1 wherein the memory cells comprise an amorphous solid.
Claim 16
Dependent Claim
48 words
The invention of claim 14 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 17
Dependent Claim
23 words
The invention of claim 1 wherein the memory array further comprises a substrate, and wherein the memory cells are fabricated above the substrate.
Claim 18
Dependent Claim
48 words
The invention of claim 16 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 19
Dependent Claim
11 words
The invention of claim 16 wherein the substrate comprises a semiconductor.
Claim 20
Dependent Claim
48 words
The invention of claim 18 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 21
Dependent Claim
37 words
The invention of claim 1 wherein the memory array further comprises a substrate, and wherein the memory cells are arranged on the substrate at a density no less than 3×10 7 memory cells/mm 2 of substrate area.
Claim 22
Dependent Claim
48 words
The invention of claim 20 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 23
Dependent Claim
26 words
The invention of claim 1 wherein said memory cells are characterized by an average maximum read current density no greater than 1×10 4 amperes/cm 2 .
Claim 24
Dependent Claim
48 words
The invention of claim 22 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 25
Dependent Claim
48 words
The invention of claim 1 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 26
Dependent Claim
27 words
The invention of claim 24 in combination with a digital media storage device, said storage device operative to store said digital media information in said memory cells.
Claim 27
Dependent Claim
13 words
The invention of claim 25 wherein said storage device comprises a digital camera.
Claim 28
Dependent Claim
15 words
The invention of claim 25 wherein said storage device comprises a digital audio playback device.
Claim 29
Dependent Claim
13 words
The invention of claim 25 wherein said storage device comprises digital audio book.
Claim 30
Dependent Claim
62 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells are arranged in a plurality of vertically-stacked layers of memory cells.
Claim 31
Dependent Claim
62 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells are arranged in a plurality of vertically-stacked layers of memory cells.
Claim 32
Dependent Claim
57 words
The invention of claim 1 wherein the memory cells, when the respective antifuse layers are breached, are characterized by an average read current less than 6.3 microamperes; and wherein the memory cells, when the respective antifuse layers are intact, are characterized by an average read current less than the read current when the antifuse layer is breached.
Claim 33
Dependent Claim
37 words
The invention of claim 1 wherein each cell comprises a programmed state, in which the read current is less than 6.3 microamperes, and another state, in which the read current is less than in the programmed state.
Claim 34
Dependent Claim
26 words
The invention of claim 1 wherein each memory cell comprises a p-type semiconductor region characterized by a dopant concentration greater than 1×10 19 /cm 3 .
Claim 35
Dependent Claim
26 words
The invention of claim 1 wherein each memory cell comprises a p-type semiconductor region characterized by a dopant concentration greater than 1×10 20 /cm 3 .
Claim 36
Dependent Claim
27 words
The invention of claim 1 wherein each memory cell comprises a p-type semiconductor region characterized by a dopant concentration of at least 5×10 20 /cm 3 .
Claim 37
Dependent Claim
29 words
The invention of claim 1 wherein each memory cell comprises a p-type semiconductor doped with boron and characterized by a boron concentration greater than 1×10 19 /cm 3 .
Claim 38
Dependent Claim
29 words
The invention of claim 1 wherein each memory cell comprises a p-type semiconductor doped with boron and characterized by a boron concentration greater than 1×10 20 /cm 3 .
Claim 39
Dependent Claim
29 words
The invention of claim 1 wherein each memory cell comprises a p-type semiconductor doped with boron and characterized by a boron concentration greater than 5×10 20 /cm 3 .
Claim 40
Dependent Claim
21 words
The invention of claim 1 wherein the memory cells are characterized by an average maximum read current less than 6.3 microamperes.
Claim 41
Dependent Claim
21 words
The invention of claim 1 wherein the memory cells are characterized by an average maximum read current less than 125 microamperes.
Claim 42
Dependent Claim
21 words
The invention of claim 1 wherein the memory cells are characterized by an average maximum read current less than 250 microamperes.
Claim 43
Dependent Claim
40 words
The invention of claim 1 wherein each memory cell further comprises first and second diode components, at least one of the diode components comprising a semiconductor region comprising a dopant at a concentration greater than 1×10 19 /cm 3 .
Claim 44
Dependent Claim
10 words
The invention of claim 41 wherein the dopant is boron.
Claim 45
Dependent Claim
12 words
The invention of claim 41 wherein the dopant is a p-type dopant.
Claim 46
Dependent Claim
18 words
The invention of claim 41 wherein the antifuse layer is disposed between the first and second diode components.
Claim 47
Dependent Claim
19 words
The invention of claim 44 wherein the antifuse layer is in intimate contact with both of the diode components.
Claim 48
Dependent Claim
63 words
A memory array comprising a plurality of write-once, field programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein said memory cells are characterized by a read voltage no greater than 2 volts.
Claim 49
Dependent Claim
63 words
A memory array comprising a plurality of write-once, field programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein said memory cells are characterized by a read voltage no greater than 2 volts.
Claim 50
Dependent Claim
48 words
The invention of claim 46 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 51
Dependent Claim
55 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each memory cell comprises exactly two terminals.
Claim 52
Dependent Claim
55 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each memory cell comprises exactly two terminals.
Claim 53
Dependent Claim
48 words
The invention of claim 48 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 54
Dependent Claim
78 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory array comprises a plurality of wires comprising wordlines and bitlines, and wherein each memory cell is connected to exactly two wires: the respective wordline and the respective bitline.
Claim 55
Dependent Claim
78 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory array comprises a plurality of wires comprising wordlines and bitlines, and wherein each memory cell is connected to exactly two wires: the respective wordline and the respective bitline.
Claim 56
Dependent Claim
48 words
The invention of claim 50 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 57
Dependent Claim
99 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells comprise a semiconductor material and wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 58
Dependent Claim
99 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells comprise a semiconductor material and wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 59
Dependent Claim
67 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells comprise one of the following: an organic polymer, a phase change material, and an amorphous solid.
Claim 60
Dependent Claim
67 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells comprise one of the following: an organic polymer, a phase change material, and an amorphous solid.
Claim 61
Dependent Claim
48 words
The invention of claim 53 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 62
Dependent Claim
109 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory array further comprises a substrate, and wherein the memory cells are fabricated above the substrate, and wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 63
Dependent Claim
109 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory array further comprises a substrate, and wherein the memory cells are fabricated above the substrate, and wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 64
Dependent Claim
115 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory array further comprises a substrate, and wherein the memory cells are fabricated above the substrate, wherein the substrate comprises a semiconductor, and wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 65
Dependent Claim
115 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory array further comprises a substrate, and wherein the memory cells are fabricated above the substrate, wherein the substrate comprises a semiconductor, and wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 66
Dependent Claim
79 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory array further comprises a substrate, and wherein the memory cells are arranged on the substrate at a density no less than 3×10 7 memory cells/mm 2 of substrate area.
Claim 67
Dependent Claim
79 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory array further comprises a substrate, and wherein the memory cells are arranged on the substrate at a density no less than 3×10 7 memory cells/mm 2 of substrate area.
Claim 68
Dependent Claim
48 words
The invention of claim 57 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 69
Dependent Claim
68 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein said memory cells are characterized by an average maximum read current density no greater than 1×10 4 amperes/cm 2 .
Claim 70
Dependent Claim
68 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein said memory cells are characterized by an average maximum read current density no greater than 1×10 4 amperes/cm 2 .
Claim 71
Dependent Claim
48 words
The invention of claim 59 wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 72
Dependent Claim
90 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 73
Dependent Claim
90 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells store digital media information selected from the group consisting of: digital text, digital books, digital music, digital audio, at least one digital still image, a sequence of digital images, digital video, at least one digital map, and combinations thereof.
Claim 74
Dependent Claim
27 words
The invention of claim 61 in combination with a digital media storage device, said storage device operative to store said digital media information in said memory cells.
Claim 75
Dependent Claim
27 words
The invention of claim 62 wherein said storage device comprises one of the following: a digital camera, a digital audio playback device, and a digital audio book.
Claim 76
Dependent Claim
99 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells, when the respective antifuse layers are breached, are characterized by an average read current less than 6.3 microamperes; and wherein the memory cells, when the respective antifuse layers are intact, are characterized by an average read current less than the read current when the antifuse layer is breached.
Claim 77
Dependent Claim
99 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein the memory cells, when the respective antifuse layers are breached, are characterized by an average read current less than 6.3 microamperes; and wherein the memory cells, when the respective antifuse layers are intact, are characterized by an average read current less than the read current when the antifuse layer is breached.
Claim 78
Dependent Claim
79 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each cell comprises a programmed state, in which the read current is less than 6.3 microamperes, and another state, in which the read current is less than in the programmed state.
Claim 79
Dependent Claim
79 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each cell comprises a programmed state, in which the read current is less than 6.3 microamperes, and another state, in which the read current is less than in the programmed state.
Claim 80
Dependent Claim
68 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each memory cell comprises a p-type semiconductor region characterized by a dopant concentration greater than 1×10 19 /cm 3 .
Claim 81
Dependent Claim
68 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each memory cell comprises a p-type semiconductor region characterized by a dopant concentration greater than 1×10 19 /cm 3 .
Claim 82
Dependent Claim
27 words
The invention of claim 66 , wherein each memory cell comprises a p-type semiconductor region characterized by a dopant concentration greater than 1×10 20 /cm 3 .
Claim 83
Dependent Claim
28 words
The invention of claim 66 , wherein each memory cell comprises a p-type semiconductor region characterized by a dopant concentration of at least 5×10 20 /cm 3 .
Claim 84
Dependent Claim
71 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each memory cell comprises a p-type semiconductor doped with boron and characterized by a boron concentration greater than 1×10 19 /cm 3 .
Claim 85
Dependent Claim
71 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each memory cell comprises a p-type semiconductor doped with boron and characterized by a boron concentration greater than 1×10 19 /cm 3 .
Claim 86
Dependent Claim
30 words
The invention of claim 69 , wherein each memory cell comprises a p-type semiconductor doped with boron and characterized by a boron concentration greater than 1×10 20 /cm 3 .
Claim 87
Dependent Claim
30 words
The invention of claim 69 , wherein each memory cell comprises a p-type semiconductor doped with boron and characterized by a boron concentration greater than 5×10 20 /cm 3 .
Claim 88
Dependent Claim
82 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each memory cell further comprises first and second diode components, at least one of the diode components comprising a semiconductor region comprising a dopant at a concentration greater than 1×10 19 /cm 3 .
Claim 89
Dependent Claim
82 words
A memory array comprising a plurality of write-once, field-programmable memory cells, each memory cell comprising a respective antifuse layer, and said memory cells characterized by an average maximum read current less than 500 microamperes when the respective antifuse layers are breached, said memory cells storing digital media, wherein each memory cell further comprises first and second diode components, at least one of the diode components comprising a semiconductor region comprising a dopant at a concentration greater than 1×10 19 /cm 3 .
Claim 90
Dependent Claim
18 words
The invention of claim 72 wherein the dopant is one of the following: boron and a p-type dopant.
Claim 91
Dependent Claim
18 words
The invention of claim 72 wherein the antifuse layer is disposed between the first and second diode components.
Claim 92
Dependent Claim
19 words
The invention of claim 74 wherein the antifuse layer is in intimate contact with both of the diode components.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-02-03 | 2006-08-05 | 2007-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-02-03 | 2010-08-05 | 2011-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-02-03 | 2014-08-05 | 2015-02-04 | $7700.00 | Window Closed / Lapsed |