Semiconductor integrated circuit with isolated elements and power transistor utilizing substrate "for low collector resistance

Abstract

Abstract A SUBSTRATE, PREFERABLY OF LOW RESISTIVITY, CAN SERVE AS A COLLECTOR CONTACT REGION OF A POWER TRANSISTOR AS WELL AS A SUPPORT FOR OTHER FUNCTIONAL ELEMENTS OF AN INTEGRATED CIRCUITS. AN EPITAXIAL LAYERS ON THE SURFACE OF THE SUBSTRATE, OF THE SAME CONDUCTIVITY TYPE BUT HIGHER RESISTIVITY, CONTAINS OTHER REGIONS OF FUNCTIONAL ELEMENTS. ISOLATION MEANS SUCH AS PN JUNCTION FORMING REGIONS OR DIELECTRIC MATERIAL, UNDERLIES AND ENCLOSES THOSE PORTIONS OF THE EPITAXIAL LAYER TO BE ISOLATED. MINIMAL COLLECTOR RESISTANCE AND INCREASED POWER HANDLING CAPABILITY CAN BE OBTAINED WITH THE POWER TRANSISTOR STRUCTURE WITHOUT SACRIFICING ISOLATION OR COMPLICATING FABRICATION.

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