Patent US4196263A successfully refreshed from Google Patents.
US4196263A
Expired / Lapsed
US
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Semiconductor devices with enhanced properties
Assignee: AT&T Inc
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Filing: 1978-10-13
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Granted: 1980-04-01
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Expires: 1998-10-13
Abstract
Abstract The voltage produced by a photovolatic device containing a semiconductor layer is enhanced by interfacing the semiconductor material of the device with an additional semiconductor material to form an isotype heterodiode. For example, the solar power conversion efficiency and the voltage produced by an n-CdS layer immersed in an electrolyte is enhanced by interfacing the n-CdS layer with an n-GaAs layer.
Inventors
- 👤 Joseph L. Shay
- 👤 Sigurd Wagner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:45
CPC Classifications
H; H01; H01G; H01G9/00; H01G9/20; H01M; H01M14/00; H01M14/005; H10; H10F; H10F10/00; H10F10/10; H10F10/16; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
247 words
A device with enhanced voltage characteristics which is responsive to solar light comprising a first semiconductor material having a surface forming a rectifying junction with an interfacing material chosen from the group consisting of electrolytes, semiconductors, and Schottky barrier forming materials such that when solar light is incident on said interfacing material whose surface is adapted to accept said solar light a generated voltage is developed between said interfacing material and said first semiconductor material characterized in that a second semiconductor material of the same majority carrier type as said first semiconductor material and with a smaller bandgap than said first semiconductor material forms a junction with said first semiconductor material on another surface thereof apart from said surface forming said rectifying junction; wherein the electrochemical potential of the majority carriers in said first semiconductor material is smaller than the electrochemical potential of the majority carriers of said second semiconductor material in isolation and wherein the absolute value of the difference between the electrochemical potential of the majority carriers in said first and said second semiconductor material in isolation is smaller than the bandgap of said second semiconductor material, whereby when said solar light is incident on said interfacing material, majority and minority carriers are generated both in said first semiconductor material and in said second semiconductor material, thereby giving a voltage higher than said generated voltage and thereby giving currents from said generated carriers in said first and second semiconductor material which are currents in series.
Claim 2
Independent Claim
247 words
A device with enhanced voltage characteristics which is responsive to solar light comprising a first semiconductor material having a surface forming a rectifying junction with an interfacing material chosen from the group consisting of electrolytes, semiconductors, and Schottky barrier forming materials such that when solar light is incident on said interfacing material whose surface is adapted to accept said solar light a generated voltage is developed between said interfacing material and said first semiconductor material characterized in that a second semiconductor material of the same majority carrier type as said first semiconductor material and with a smaller bandgap than said first semiconductor material forms a junction with said first semiconductor material on another surface thereof apart from said surface forming said rectifying junction; wherein the electrochemical potential of the majority carriers in said first semiconductor material is smaller than the electrochemical potential of the majority carriers of said second semiconductor material in isolation and wherein the absolute value of the difference between the electrochemical potential of the majority carriers in said first and said second semiconductor material in isolation is smaller than the bandgap of said second semiconductor material, whereby when said solar light is incident on said interfacing material, majority and minority carriers are generated both in said first semiconductor material and in said second semiconductor material, thereby giving a voltage higher than said generated voltage and thereby giving currents from said generated carriers in said first and second semiconductor material which are currents in series.
Claim 3
Dependent Claim
12 words
The device of claim 1 wherein said first semiconductor material is n-CdS.
Claim 4
Dependent Claim
12 words
The device of claim 1 wherein said second semiconductor material is n-GaAs.
Claim 5
Dependent Claim
12 words
The device of claim 3 wherein said interfacing material is an electrolyte.
Claim 6
Dependent Claim
12 words
The device of claim 1 wherein said interfacing material is an electrolyte.
Claim 7
Dependent Claim
19 words
The device of claim 1 wherein said first semiconductor material is n-CdS, and said second semiconductor material is n-GaAs.
Claim 8
Dependent Claim
12 words
The device of claim 8 wherein said interfacing material is an electrolyte.
Claim 9
Dependent Claim
11 words
The device of claim 7 wherein said electrolyte comprises a polysulfide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1983-04-01 | 1983-10-01 | 1984-04-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1987-04-01 | 1987-10-01 | 1988-04-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1991-04-01 | 1991-10-01 | 1992-04-01 | $7700.00 | Window Closed / Lapsed |