US4421576A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
Assignee: RCA Corp
•
Filing: 1981-09-14
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Granted: 1983-12-20
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Expires: 2001-09-14
Abstract
Abstract A first compound semiconductor layer is epitaxially formed on a surface of a semi-insulating substrate. The first semiconductor layer is then removed and a second compound semiconductor layer is epitaxially formed on the substrate surface which is now exposed.
Inventors
- 👤 Stuart T. Jolly
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
57 words
A method for forming a III-V type compound semiconductor film in a vapor phase deposition system, comprising: epitaxially forming a first III-V type compound semiconductor layer on a surface of a substrate, which is doped so as to be semi-insulating; completely removing said layer; and epitaxially forming a second III-V type compound semiconductor layer on said surface.
Claim 2
Independent Claim
57 words
A method for forming a III-V type compound semiconductor film in a vapor phase deposition system, comprising: epitaxially forming a first III-V type compound semiconductor layer on a surface of a substrate, which is doped so as to be semi-insulating; completely removing said layer; and epitaxially forming a second III-V type compound semiconductor layer on said surface.
Claim 3
Dependent Claim
15 words
A method in accordance with claim 1, wherein the substrate is a monocrystalline compound semiconductor.
Claim 4
Dependent Claim
20 words
A method in accordance with claim 1, comprising: forming the first layer from a gaseous mixture comprising gallium and arsenic.
Claim 5
Dependent Claim
13 words
A method in accordance with claim 1, comprising: gas etching said first layer.
Claim 6
Dependent Claim
22 words
A method in accordance with claim 1, further comprising: forming said second layer from a gaseous mixture which comprises gallium and arsenic.
Claim 7
Dependent Claim
18 words
A method in accordance with claim 5, further comprising: providing an N type dopant in said gaseous mixture.
Claim 8
Dependent Claim
25 words
A method in accordance with claim 2, wherein said substrate is GaAs doped with a material selected from the group consisting of chromium and oxygen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-19 | 1987-06-20 | 1987-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-19 | 1991-06-20 | 1991-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-19 | 1995-06-20 | 1995-12-20 | $7700.00 | Window Closed / Lapsed |