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Patent US4421576A successfully refreshed from Google Patents.
US4421576A
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US
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Method for forming an epitaxial compound semiconductor layer on a semi-insulating substrate
Assignee: RCA Corp
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Filing: 1981-09-14
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Granted: 1983-12-20
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Expires: 2001-09-14
Abstract
Abstract A first compound semiconductor layer is epitaxially formed on a surface of a semi-insulating substrate. The first semiconductor layer is then removed and a second compound semiconductor layer is epitaxially formed on the substrate surface which is now exposed.
Inventors
- 👤 Stuart T. Jolly
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 14:10
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/36; Y; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
57 words
A method for forming a III-V type compound semiconductor film in a vapor phase deposition system, comprising: epitaxially forming a first III-V type compound semiconductor layer on a surface of a substrate, which is doped so as to be semi-insulating; completely removing said layer; and epitaxially forming a second III-V type compound semiconductor layer on said surface.
Claim 2
Independent Claim
57 words
A method for forming a III-V type compound semiconductor film in a vapor phase deposition system, comprising: epitaxially forming a first III-V type compound semiconductor layer on a surface of a substrate, which is doped so as to be semi-insulating; completely removing said layer; and epitaxially forming a second III-V type compound semiconductor layer on said surface.
Claim 3
Dependent Claim
15 words
A method in accordance with claim 1, wherein the substrate is a monocrystalline compound semiconductor.
Claim 4
Dependent Claim
20 words
A method in accordance with claim 1, comprising: forming the first layer from a gaseous mixture comprising gallium and arsenic.
Claim 5
Dependent Claim
13 words
A method in accordance with claim 1, comprising: gas etching said first layer.
Claim 6
Dependent Claim
22 words
A method in accordance with claim 1, further comprising: forming said second layer from a gaseous mixture which comprises gallium and arsenic.
Claim 7
Dependent Claim
18 words
A method in accordance with claim 5, further comprising: providing an N type dopant in said gaseous mixture.
Claim 8
Dependent Claim
25 words
A method in accordance with claim 2, wherein said substrate is GaAs doped with a material selected from the group consisting of chromium and oxygen.
References Cited (Backward Citations)
US3208888A
Cited
US3224911A
Cited
US3243323A
Cited
US3345222A
Cited
US3392066A
Cited
US3393103A
Cited
US3522118A
Cited
US3480491A
Cited
US3511727A
Cited
US3600241A
Cited
US3729348A
Cited
US3802967A
Cited
US3855024A
Cited
US3808072A
Cited
US3762945A
Cited
US3900363A
Cited
US4000020A
Cited
US3983510A
Cited
US4154663A
Cited
US4253887A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-19 | 1987-06-20 | 1987-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-19 | 1991-06-20 | 1991-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-19 | 1995-06-20 | 1995-12-20 | $7700.00 | Window Closed / Lapsed |