Reference voltage circuit for obtaining a constant voltage irrespective of the fluctuations of a power supply voltage

Claim 2

A reference voltage circuit for obtaining a constant reference voltage irrespective of the fluctuations of a power supply voltage, having a first power supply voltage terminal, a reference voltage terminal and a second power supply voltage terminal, said reference voltage circuit comprising: a first resistor, connected between said first power supply voltage terminal and said reference voltage terminal; a second resistor, connected between said second power supply voltage terminal and said reference voltage terminal; and a first metal oxide semiconductor field effect transistor, the drain thereof being connected to said reference voltage terminal, the source thereof being connected to said first power supply voltage terminal, and the gate thereof being connected to said second power supply voltage terminal, wherein said second resistor has a resistance R 2 , said first transistor has a constant β, and a reference voltage V ref is obtained at said reference voltage terminal, with the relationship between R 2 , β, and V ref being as follows: R.sub.2 =1/(β·V.sub.ref) for β=(W/L)·(ε·μ/t) where W is the gate width of said transistor, L is the gate length of said transistor, ε is the permittivity of a gate oxide film of said transistor, t is the thickness of said gate oxide film of said transistor, and μ is the surface mobility of the substrate.

Claim 3

A circuit according to claim 1, wherein said first resistor has a resistance R 1 which has the following relationship with the resistance R 2 : 1/R.sub.1 =(V.sub.cc -V.sub.ref)/(V.sub.ref ·R.sub.2)-β{(V.sub.cc -V.sub.t)-V.sub.ref /2} where V cc is the power supply voltage, and V t is the threshold voltage of said transistor.

Claim 4

A reference voltage circuit for obtaining a constant reference voltage irrespective of the fluctuations of a power supply voltage, having a first power supply voltage terminal, a reference voltage terminal and a second power supply voltage terminal, said reference voltage circuit comprising: a first metal oxide semiconductor field effect transistor, the drain thereof being connected to said reference voltage terminal, the source thereof being connected to said first power supply voltage terminal, and the gate thereof being connected to said second power supply voltage terminal; a second metal oxide semiconductor field effect transistor, the drain thereof being connected to said reference voltage terminal and the source thereof being connected to said first power supply voltage terminal; and a resistor, connected between said second power supply voltage terminal and said reference voltage terminal; wherein said resistor has a resistance R 2 , said first transistor has a constant β, and a reference voltage V ref is obtained at said reference voltage terminal, with the relationship between R 2 , β, and V ref being as follows: R.sub.2 =1/(β·V.sub.ref) for β=(W/L)·(ε·μ/t) where W is the gate width of said first transistor, L is the gate length of said first transistor, ε is the permittivity of the gate oxide film of said first transistor, t is the thickness of said gate oxide film of said first transistor, and μ is the surface mobility of the substrate.

Claim 5

A reference voltage circuit for obtaining a constant reference voltage irrespective of the fluctuations of a power supply voltage, having a first power supply voltage terminal, a reference voltage terminal and a second power supply voltage terminal, said reference voltage circuit comprising: a first metal oxide semiconductor field effect transistor, the drain thereof being connected to said reference voltage terminal, the source thereof being connected to said first power supply voltage terminal, and the gate thereof being connected to said second power supply voltage terminal; a second metal oxide semiconductor field effect transistor, the drain thereof being connected to said reference voltage terminal and the source thereof being connected to said first power supply voltage terminal; and a resistor, connected between said second power supply voltage terminal and said reference voltage terminal; wherein said resistor has a resistance R 2 , said first transistor has a constant β, and a reference voltage V ref is obtained at said reference voltage terminal, with the relationship between R 2 , β, and V ref being as follows: R.sub.2 =1/(β·V.sub.ref) for β=(W/L)·(ε·μ/t) where W is the gate width of said first transistor, L is the gate length of said first transistor, ε is the permittivity of the gate oxide film of said first transistor, t is the thickness of said gate oxide film of said first transistor, and μ is the surface mobility of the substrate.

Claim 6

A circuit according to claim 3, wherein said second transistor is an enhancement-type metal oxide semiconductor field effect transistor, the gate thereof being connected to the drain thereof.

Claim 7

A circuit according to claim 3, wherein said second transistor is depletion-type metal oxide semiconductor field effect transistor, the gate thereof being connected to the source thereof.

Claim 8

A reference voltage circuit for obtaining a constant reference voltage irrespective of the fluctuations of a power supply voltage, having a first power supply voltage terminal, a reference voltage terminal and a second power supply voltage terminal, said reference voltage circuit comprising: a first metal oxide semiconductor field effect transistor, the drain thereof being connected to said reference voltage terminal, the source thereof being connected to said first power supply voltage terminal, and the gate thereof being connected to said second power supply voltage terminal, a second transistor, the drain thereof being connected to said reference voltage terminal and the source thereof being connected to said first power supply voltage terminal; and a third transistor, the drain thereof being connected to said second power supply voltage terminal and the source thereof being connected to said reference voltage terminal, wherein said third transistor operates as a nonlinear resistive element having a differential resistance r 2 , said first transistor has a constant β, and said reference voltage terminal has a reference voltage V ref , the relationship between r 2 , β and V ref being as follows: r.sub.2 =1/(β·V.sub.ref) for β=(W/L)·(ε·μ/t) , and 1/r.sub.2 =(δI.sub.2 /δV.sub.cc).sub.V.sbsb.cc =constant where W is the gate width of said first transistor, L is the gate length of said first transistor, ε is the permittivity of a gate oxide film of said first transistor, t is the thickness of said gate oxide film of said first transistor, μ is the surface mobility of the substrate, I 2 is the current flowing through said nonlinear resistive element, and V cc is the second power supply voltage.

Claim 9

A reference voltage circuit for obtaining a constant reference voltage irrespective of the fluctuations of a power supply voltage, having a first power supply voltage terminal, a reference voltage terminal and a second power supply voltage terminal, said reference voltage circuit comprising: a first metal oxide semiconductor field effect transistor, the drain thereof being connected to said reference voltage terminal, the source thereof being connected to said first power supply voltage terminal, and the gate thereof being connected to said second power supply voltage terminal, a second transistor, the drain thereof being connected to said reference voltage terminal and the source thereof being connected to said first power supply voltage terminal; and a third transistor, the drain thereof being connected to said second power supply voltage terminal and the source thereof being connected to said reference voltage terminal, wherein said third transistor operates as a nonlinear resistive element having a differential resistance r 2 , said first transistor has a constant β, and said reference voltage terminal has a reference voltage V ref , the relationship between r 2 , β and V ref being as follows: r.sub.2 =1/(β·V.sub.ref) for β=(W/L)·(ε·μ/t) , and 1/r.sub.2 =(δI.sub.2 /δV.sub.cc).sub.V.sbsb.cc =constant where W is the gate width of said first transistor, L is the gate length of said first transistor, ε is the permittivity of a gate oxide film of said first transistor, t is the thickness of said gate oxide film of said first transistor, μ is the surface mobility of the substrate, I 2 is the current flowing through said nonlinear resistive element, and V cc is the second power supply voltage.

Claim 10

A circuit according to claim 6, wherein said second and third transistors are enhancement-type metal oxide semiconductor field effect transistors, the gates thereof being connected to the respective drains.

Claim 11

A circuit according to claim 6, wherein said second and third transistors are depletion-type metal oxide semiconductor field effect transistors, the gates thereof being connected to the respective sources.