Patent US4526624A successfully refreshed from Google Patents.
US4526624A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Enhanced adhesion of films to semiconductors or metals by high energy bombardment
Assignee: California Institute of Technology
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Filing: 1982-07-02
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Granted: 1985-07-02
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Expires: 2002-07-02
Abstract
Abstract Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.
Inventors
- 👤 Thomas A. Tombrello
- 👤 Yuanxun Qiu
- 👤 Marcus H. Mendenhall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 18:52
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; H10P34/00; H10P34/40
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
106 words
A method of improving the adhesion of a first surface of a metal or a first semiconductor to a surface of a second semiconductor, each of said semiconductors having a resistivity below 10 3 ohm-cm, a band gap from 0.01 eV to 5 eV and being an element selected from Groups III, IV or VI of the Periodic Table or a compound selected from III-V compounds or II-VI compounds comprising the steps of: bringing the two surfaces into contact; and applying high energy ions having an energy of at least 0.1 MeV/amu to the interface of the two surfaces for a period sufficient to improve adhesion.
Claim 2
Independent Claim
106 words
A method of improving the adhesion of a first surface of a metal or a first semiconductor to a surface of a second semiconductor, each of said semiconductors having a resistivity below 10 3 ohm-cm, a band gap from 0.01 eV to 5 eV and being an element selected from Groups III, IV or VI of the Periodic Table or a compound selected from III-V compounds or II-VI compounds comprising the steps of: bringing the two surfaces into contact; and applying high energy ions having an energy of at least 0.1 MeV/amu to the interface of the two surfaces for a period sufficient to improve adhesion.
Claim 3
Dependent Claim
21 words
A method according to claim 1 in which the ions have a dose of at least 10 12 /cm 2 .
Claim 4
Dependent Claim
17 words
A method according to claim 1 in which the first surface is a thin film of metal.
Claim 5
Dependent Claim
12 words
A method according to claim 1 in which the metal is gold.
Claim 6
Dependent Claim
21 words
A method according to claim 1 in which the semiconductor is an element selected from silicon, germanium, selenium, tellurium or boron.
Claim 7
Dependent Claim
15 words
A method according to claim 1 in which the semiconductor is doped with charge carriers.
Claim 8
Dependent Claim
21 words
A method according to claim 1 in which the radiation is selectively applies to portions of the interface between said surfaces.
Claim 9
Dependent Claim
15 words
A method according to claim 1 in which the ions are generated at the interface.
Claim 10
Dependent Claim
39 words
A method according to claim 3 in which the film has a thickness from one monolayer to 20 mils and is selected from the group consisting of gold, nickel, chromium, cadmium, copper, platinum, palladium, rhodium, tantalum, aluminum or silver.
Claim 11
Dependent Claim
19 words
A method according to claim 6 in which the semiconductor contains a plurality of zones of opposite conductivity type.
Claim 12
Dependent Claim
15 words
A method according to claim 10 in which the semiconductor is capable of emitting light.
Claim 13
Dependent Claim
17 words
A method according to claim 11 in which the semiconductor is capable of emitting collimated, coherent light.
Claim 14
Dependent Claim
22 words
A method according to claim 7 further including the step of removing the non-adhered, non-irradiated portion from the surface of the semiconductor.
Claim 15
Dependent Claim
39 words
A method according to claim 8 in which the ions are generated by disposing fissionable elements or compounds that undergo nuclear reation having charged particles as the reaction product, or neutron activatible, charge particle emitting compounds at said interface.
Claim 16
Dependent Claim
19 words
A method according to claim 14 in which said elements or compounds are doped into one of said surfaces.
References Cited (Backward Citations)
US3535775A
Cited
US3733222A
Cited
US3682729A
Cited
US3967982A
Cited
JPS5339864A
Cited
US4147564A
Cited
US4278475A
Cited
US4323590A
Cited
JPS5633817A
Cited
US4364969A
Cited
US4352835A
Cited
US4457972A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1988-07-01 | 1988-12-31 | 1989-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1992-07-01 | 1992-12-31 | 1993-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1996-07-01 | 1996-12-31 | 1997-07-02 | $7700.00 | Window Closed / Lapsed |